• 한국세라믹학회지
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• 제44권11호
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• pp.645-649
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• 2007

The $La_{0.7}Sr_{0.3}MnO_3$ was deposited on $SiO_2/Si$ substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was $350^{\circ}C$. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.283.1-283.1
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• 2016

Tin Oxide(SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. It would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. In addition, SnO2 is commonly used as gas sensors. To fabricate high quality epitaxial SnO2 thin films, a powder sputtering method was used, in contrast to typical sputtering technique with sintered target. Single crystalline sapphire(0001) substrates were used. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurements. We found that the strain evolution of the samples was highly affected by gas environment and growth rate, resulted in the delamination under O2 environment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1478-1480
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• 2001

ZnO : Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply which can deposit a high quality thin films and control deposition condition in all range of $O_2$ gas ratio using ZnO target containing 8 at% of Al. Sputtering was carried out at a substrate temperature of R T with a DC current of 0.6 A and $O_2$ flow rate of 0 $\sim$ 0.9. The characteristics of ZnO : Al thin films was investigated by $\alpha$-step, four point probe, X-ray diffraction and UV/VIS spectrometer.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권9호
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• pp.527-532
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with dc bias voltage of -10V showed lower discharge voltage and lower erosion rate byion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardement during deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.185-188
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• 2000

Crystal orientation of Ni$_{18}$ $Fe_{19}$ thin films prepared by facing targets sputtering system was investigated. FTS system can deposit a high quality thin film and control deposition conditions in wide range. T he crystallographic characteristics of Ni$_{18}$ $Fe_{19}$ thin films on variation of thickness and substrate tempera ture was investigated by XRD and AFM. As a result, we obtained Ni$_{18}$ $Fe_{19}$ thin films prepared at subst rate temperature room temperature, thickness 160nm and over revealed good crystal orientation to [111] direction.irection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.222-225
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• 2000

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.

• 한국표면공학회지
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• 제43권6호
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• pp.260-265
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• 2010

STD 61 steel has been widely used for tools, metallic mold and die for press working because of its favorable mechanical properties such as high toughness, and creep strength as well as excellent oxidation resistance. The STD 61 tool steel coated with TiN and ZrN by sputtering results in improvement of wear and corrosion resistance. In this study, surface characteristics of TiN and ZrN film coated STD 61 by sputtering were studied by using FE-SEM, EDS, XRD, and XRR and nanoindentation tests. From the results of surface characteristics of coated specimen, the ZrN coated surface showed finer granular than that of TiN coated surface. The coated layer structures of ZrN and TiN were grown to (111) and (200) preferred orientation. From the results of XRR test for surface roughness, density and growth rate of coating film, surface roughness and growth rate of ZrN coated film revealed lower values those of TiN coated film, whereas density of ZrN coated film showed higher values than that of TiN coated film. From the nanohardness and elastic modulus test, nanohardness value and elastic modulus of ZrN coated film became higher than those of TiN coated film.

• 한국정보통신학회논문지
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• 제10권3호
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• pp.473-478
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• 2006

DC 마그네트론 스퍼터링 방법으로 ITO 박막을 형성하였다. 박막 형성 시 스퍼터 전압을 변화시켜 음이온에 의한 손상을 최소화하였으며, 또한 기판온도와 산소유입량을 변화시켜 비저항 $1.6\times10^{-4}{\Omega}cm$, 광투과도 90% 이상의 값을 갖는 양질의 박막을 형성 할 수 있었다. 박막 형성 시 $O_2$ 가스의 유량이 4sccm 이상으로 산소공급이 과다할 경우는 ITO 박막의 비저항이 증가하고, 광 투과도가 포화됨을 알 수 있었다.

• Journal of Information Display
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• 제2권1호
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• pp.38-42
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• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).