• 한국세라믹학회지
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• 제52권6호
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• pp.462-466
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• 2015

This paper reports the microstructure of hot-pressed $ZrB_2$-SiC ceramics with added $B_4C$ as characterized by transmission electron microscopy. $ZrB_2$ has a melting point of $3245^{\circ}C$, a relatively low density of $6.1g/cm^3$, and specific mechanical properties at an elevated temperature, making it a candidate for application to environments with ultra-high temperatures which exceed $2000^{\circ}C$. Due to the non-sinterability of $ZrB_2$-based ceramics, research on sintering aids such as $B_4C$ or $MoSi_2$ has become prominent recently. From TEM investigations, an amorphous layer with contaminant oxide is observed in the vicinity of $B_4C$ grains remaining in hot-pressed $ZrB_2$-SiC ceramics with $B_4C$ as an additive. The effect of a $B_4C$ addition on the microstructure of this system is also discussed.

• 열처리공학회지
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• 제9권1호
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• pp.1-11
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• 1996

Mechanical alloying is an effective process to finely distribute inert dispersoids in an Al-TM(TM is a transition metal) system. It has been considered that high melting point aluminides are formed by precipitation from supersaturated Al(Ti) powder. This analysis is based on the fact that much higher content of TM than the solubioity can be dissolved in alpha aluminum during the high energy ball milling. Thus, decomposition behavior of Ti in the Al(Ti) was considered very important. But it is confirmed that the higher portion of Ti than Al(Ti) solid solution is existed as nano-sized Ti particles in the MA powders by high energy ball nilling from the XRD spectrum and TEM analysis in this study. Therefore, the role of undissolved TM particles affect the formation of aluminides should be suitably considered. In this study, we present experimental observation on the formation of $Al_3Ti$ fron mechanical alloyed Al-Ti alloys in the hyperperitectic region. This study showed that, in the mechanically alloyed Al-20wt%Ti specimen, intermediate phase of cubic $Al_3Ti$ and tetragonal $Al_{24}Ti_8$ formed at $300{\sim}400^{\circ}C$ and $400{\sim}500^{\circ}C$, respectively, before the MA state reaches to equilibrium at higher temperatures. The formation behavior of $Ll_2-Al_3Ti$ is interpreted by interdiffusion of Al and Ti in solid state based on the fact that large amount of nano-sized Ti particles exist in the milled powder. Present analysis indicated undissolved Ti particles of nanosize should have played an important role initiation the formation of $Al_3Ti$ phase during annealing.

• Composites Research
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• 제31권2호
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• pp.63-68
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• 2018

열가소성 복합재료는 다양한 장점에도 불구하고 기계적 특성이 낮아 고성능 항공산업 분야에서는 제한적으로 사용되어 왔으나 최근 열가소성 방향족 폴리머 복합재들이 많이 연구/활용되고 있다. 본 연구에서는 대표적인 열가소성 방향족 폴리머인 PEEK와 PPS Neat 수지 필름을 DSC 기기를 이용하여 가열, 냉각 및 재 가열 사이클을 연속적으로 수행하여 유리전이온도 및 용융온도 등의 특성변화를 확인하고 냉각속도에 따른 결정화도(Crystallinity)의 차이를 평가하였다. 1차 가열단계에서 각 폴리머의 용융온도보다 높은 온도에 5분간 유지시켜 이전 열이력을 제거하였고 2차 냉각단계에서 냉각속도를 분당 2, 5, 10, 20 및 $40^{\circ}C$로 조절/적용함으로서 결정화반응을 제어하였으며, 3차 가열단계에서 재가열하여 용융엔탈피를 측정함으로서 결정화도 차이를 확인하였다. 높은 비정질 영역을 가진 시편의 첫 번째 가열시 냉각결정화 현상이 일어나고 뚜렷한 유리상 전이구역을 확인할 수 있었던 반면에 결정질 영역이 증가된 재가열시에는 냉각결정화 현상이 일어나지 않고 상대적으로 유리상 전이구역이 약해지는 것을 확인하였다. 2차 냉각단계에서 냉각속도가 느려짐에 따라 결정화도가 높아졌는데 PEEK의 경우 냉각속도의 차이에 따라 21.9~39.3% 결정화도를 보였으며, PPS는 29.1~31.2% 결정화도 차이를 얻을 수 있었다.

• 폴리머
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• 제27권4호
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• pp.275-284
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• 2003

접착성이 없는 고밀도 폴리에틸렌 (HDPE)과 나노입자 카본블랙 복합체를 대상으로 전극과의 계면 접착 향상과 고분자 가교 특성에 따른 양온도 계수 (PTC) 특성을 연구하였다. 은페이스트를 전극으로 사용하였을 때에는, 전극과 HDPE의 접착 계면 저항으로 인하여 카본함량이 45 wt% 이상에서 1 $\Omega$ 이었으나, 덴드라이트 (dendrite)된 구리 전극의 경우 HDPE와 전극간의 넓은 면적 접촉에 의한 계면 저항이 0.2 $\Omega$ 이하였다. HDPE와 은페이스트의 계면 저항의 증가로 인하여 구리 박막을 사용하였을 때보다 전체적으로 저항이 높게 나타났다. HDPE와 나노입자 카본블랙 복합체는 온도가 증가하여 HDPE의 비캣연화온도까지는 저항이 일정하게 유지하다가, HDPE의 연화점에서 증가하기 시작하여 용융점에서 극대 값을 나타내는 전형적인 PTC특성을 보여주었다. 일반적으로 HDPE의 용융점을 넘어서면 음온도 계수 (NTC) 현상이 나타나는데, 가교결합을 시킨 HDPE의 경우는, 용융점 이상에서 NTC 현상이 나타나지 않고 저항이 일정하게 유지되거나 증가하는 경향이 나타났다. 구리 (copper) 전극과 고분자와의 계면 접촉 면적을 증가시키기 위하여 크롬 (chromium)을 덴드라이트시킨 전극을 사용하여 계면 접촉 저항을 감소시켰다.

• 한국의류학회지
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• 제23권4호
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• pp.584-592
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• 1999

Highly conductive polyaniline(PAn)-nylon 6 composite fabric was prepared by immersing the nylon 6 fabric in 0.5M aniline+0.35M HCl aqueous solution at 4$0^{\circ}C$ for 2hours, Polymerization was then followed by mixing the prepared oxidant and dopant solution(0.5M(NH4)2S2O+0.35M HCl) to the diffusion bath at 5$^{\circ}C$ for 30 minutes. The conductivity of prepared PAn-nylon 6 composite fabrics reached as high as 0.5$\times$10-1S/cm. Their conductivity were significantly affected by the aniline and oxidant concentration. As compared to those of nylon 6 fabric heat of fusion melting point the degree of crystallinity and tensile strength of PAn-nylon 6 did not significantly changed by inclusion of PAn. In the aspect of serviceability wheras the fabric conductivity was significantly decreased after multiple washion no significant changes in the fabric conductivity were observed after abrading the composite fabric over 50 cycles. However we found that the fabric conductivity could be recovered by acid re-doping with HCl.

• 한국응용과학기술학회지
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• 제16권2호
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• pp.127-133
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• 1999

New electroluminescent materials base on anthracene chromophore, [9.10-bis(${\alpha}$-naph -thylethenyl) anthracene (${\alpha}$-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of ${\alpha}$-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ $m^2$ at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.1-4
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• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1416-1418
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• 1998

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Bulletin of the Korean Chemical Society
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• 제13권2호
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• pp.131-135
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• 1992

High-Tc superconducting materials, $HoBa_2Cu_3O_{7-x}F_y$ with $0.0{\leq}y{\leq}0.5$, were synthesized by ceramic method and studied by X-ray diffraction, thermogravimetric analysis, differential thermal analysis, scanning electron microscopy and resistivity measurement. From the X-ray diffraction data, it was found that the samples had only single phase of which lattice volumes were decreased in proportional to the amount of fluorine, which indicated that the relatively small fluorine atoms are effectively substituted for the oxygen sites. Also, an anomalous phenomenon appeared that the peak intensities of (001) planes were greatly increased as fluorine contents increased. SEM photographs revealed that the grain sizes were enlarged progressively with fluorine contents. This fact could be explained along with DTA & TGA data that the incorporation of fluorine gave rise to lowering the melting point. Tc decreased as the incorporation of fluorine content increased. This implies that the superconducting electrons are perturbed due to the substitution of electronegative fluorine atom.