• 공업화학
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• 제18권5호
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• pp.506-510
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• 2007

전기적 특성을 가지는 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA)가 유기발광소자(OLED)에서 전극으로 사용되는 ITO (Indium Tin Oxide)와 홀 수송층(Hole Transport Layer, HTL) 사이에 박막으로 진공증착되었다. 분자배열이 잘 되어진 1-TNATA의 경우 ITO와 홀 수송층 사이의 계면에서 생기는 전하주입장벽을 줄임으로 소자의 안정성과 효율을 높여준다. 본 연구에서의 라만 스펙트라(Raman spectra) 분석 결과, 증착된 1-TNATA 박막의 열처리와 증착하는 동안 전자기장 처리에 의해서 박막이 집적되고 분자배열이 이루어짐을 확인하였다. 열처리를 한 경우 1-TNATA 박막으로의 전류 흐름이 25% 증가하였다. 또한, $110^{\circ}C$에서 열처리한 1-TNATA 박막으로 제조된 다층유기발광소자의 전원 효율과 발광효율이 향상되었다. 열처리한 박막이 전자기장으로 처리한 박막에 비해 높은 효율을 나타내었다.

• 한국결정성장학회지
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• 제18권1호
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• pp.27-32
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• 2008

새로운 $CaZrO_3:Er^{3+}$ 축광성 형광체를 전통적인 고상반응법으로 제조하였으며, 분쇄한 축광성 형광체를 X 선 회절 분석, 광발광 분석, 열발광 분석과 휘도계를 통하여 장잔광 특성을 분석하였다. X 선 회절 분석 결과 순수한 $CaZrO_3$ 결정상을 확인 하였으며, 고온의 질소 분위기에서 합성한 경우 446 nm 와 550 nm의 넓은 발광 피크가 나타났다. 합성한 장잔광 특성의 형광체의 발광 지속시간은 254 nm UV lamp로 여기 시킨 후 어두운 곳에서 6시간 이상 스스로 발광 하였다. 발광 피크는 $Er^{3+}$ 이온의 $^5D_{5/2}{\rightarrow}^4F_{9/2},\;^2H_{12/2},\;^4S_{3/2}{\rightarrow}^4I_{13/2}$ 그리고 $^2G_{9/2}{\rightarrow}^4I_{13/2}$ 전이에 의한 것이며, 잔광 특성은 $CaZrO_3$ 격자 내에 적당한 trap center가 형성 된 것으로 판단된다.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• 한국산업정보학회논문지
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• 제20권6호
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• pp.29-36
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• 2015

본 논문에서는 3개의 선형 전류 레귤레이터 그리고 자동 기준 전압 조절과 출력 전압 조절 루프를 포함하는 LED 배면광 드라이버 IC를 제안한다. 제안한 LED 드라이버에서 출력전압은 이중 피드백 루프를 통해 제어된다. 첫 번째 루프는 출력전압을 감지하고 조절하며, 두 번째 루프는 선형 전류 레귤레이터의 전압 강하를 감지하고 기준전압을 조정한다. 이러한 피드백 루프와, 선형 전류 레귤레이터의 전압강하는 드라이버 효율이 최대가 될 수 있는 최소값으로 유지된다. 드라이버의 출력은 각 채널당 4개의 LED를 가지는 3개의 채널 LED 구조이다. 휘도는 펄스 폭 변조(PWM) dimming 신호에 의해 조절된다. 제안한 드라이버는 0.35um의 60-V 고전압 공정에서 설계되었고, 측정 결과 최대 85% 정도의 효율을 가진다.

• Journal of Information Display
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• 제4권2호
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• pp.13-18
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• 2003

We synthesized bis (2-methyl-8-quinolinolato)(triphenylsiloxy) aluminum (III) (SAlq), a blue-emitting material having a high luminous efficiency, through a homogeneous-phase reaction. The photoluminescence (PL) and electroluminescence (EL) spectra of SAlq show two peaks at 454 nm and 477 nm. Efficient white light-emitting devices are fabricated by doping SAlq with a red fluorescent dye of 4-dicyanomethylene-2-methyl-6-{2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8yl) vinyl}-4H-pyran (DCM2). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCM2 results in light-emission of both blue and orange colors. Devices with the structure of ITO/TPD (50 nm)/SAlq:DCM2 (30 nm, 0.5 %)/$Alq_3$ (20 nm)/LiF (0.5 nmj/Al show EL peaks at 456 nm and 482 nm originating from SAlq and at 570 nm from DCM2, resulting in the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.37). The device exhibits an external quantum efficiency of about 2.3 % and a luminous efficiency of about 2.41m/W at 100 $cd/m^2$. A maximum luminance of about 23,800 $cd/m^2$ is obtained at the bias voltage of 15 V.

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• 한국통신학회논문지
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• 제33권12C호
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• pp.1046-1054
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• 2008

본 논문에서는 MPEG-2-H.264/AVC 변환 부호기에서 병목현상을 야기하는 H.264/AVC 부분의 화면내 부호기의 연산량을 감축하는 기법을 제안한다. 본 논문에서는 MPEG-2 복호기에서 획득한 DCT 계수와 영상의 방향성, H.264/AVC 화면내 부호기의 $Intral16{\times}16$ 및 $Intra4{\times}4$ 모드들 간의 상관관계 및 휘도와 색차 신호간의 경계(edge) 특성의 상관성을 활용하여 모드 선정시에 연산량을 감축하는 기법을 제안한다. 모의 실험을 통해 제안 방식이 기존에 널리 사용되는 결합형 변환 부호기에 비해 최대 약 70%의 연산량을 감축할 수 있음을 보였고, 대표적인 연산량 감축 기법인 [5]의 기법에 비해 최대 40%의 연산량을 감축할 수 있음을 보였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.402-403
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• 2007

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and a spacer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) as the blue emission and bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate $((acppy)_2Ir(acac))$ as the red emission. This spacer effectively prevented a triple-triple energy transfer between the two phosphorescent emissive layers with blue and red emission that was showed a improved lifetime. The white device showed Commission Internationale De L'Eclairage $(CIE_{x,y})$ coordinates of (0.33, 0.42) at $22400\;cd/m^2$, a maximum luminance of $27300\;cd/m^2\;at\;0.388\;mA/cm^2$, and a maximum luminous efficiency of 26.9 cd/A.