• The Journal of the Korea Contents Association
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• v.21 no.6
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• pp.44-50
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• 2021

In this paper, we analyze the efficiency of light sources of CCFL and LED monitors. Cold Cathode Fluorescent Lamp (CCFL), which is widely used as a light source for LCD display, supplies a high voltage of 1,200[V] or more when it is initially driven. In addition, a constant normal voltage of 400 ~ 800[V] after lighting, and 3 ~ 6[ mA] is needed for a power circuit that can stabilize the current. Applying a high voltage causes a lot of stress on the inverter and generates a lot of heat in the cold cathode lamp, causing significant damage to the BLU (Back Light Unit), resulting in a burning phenomenon, which causes the screen to output normal colors when outputting the screen. We can not see the yellow output and the screen darkened. Therefore, in order to prevent such a symptom in advance, efficiency can be increased by using a Light Emitting Diode (LED) as the light source of the LCD display instead of a cold cathode fluorescent lamp (CCFL). As a result, it is shown that the LED method outperforms the CCFL method.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.355-356
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• 2008

The light extraction efficiencies of GaN-based light-emitting diodes (LEDs) grown on differently patterned sapphire substrates were investigated by using the ray tracing method. It was found that angle of the pattern surface against the sapphire surface, the number of pattern per unit area were important structural factors for high extraction efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.752-754
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• 2009

High efficiency white organic light emitting diodes were fabricated by using an alignment free mask patterning method. Only red/green emission without any blue emission was observed in the red/green patterned region and blue emission was emitted in other area. A combination of the red/green and blue emission gave a high efficiency white emission. A maximum current efficiency of 30.7 cd/A and a current efficiency of 25.9 cd/A at 1000 cd/$m^2$ were obtained with a color coordinate of (0.38, 0.45).

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.23.2-23.2
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• 2011

This presentation will include an overview of III-Nitride LED technology, applications, key areas for future improvements, challenges such as efficiency droop. GaN-based high-power light-emitting diodes (LEDs) suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents, a well-known phenomenon commonly referred to as efficiency droop. Although many attempts have been made to uncover this LED's darkest secret, there is still a lack of consensus on the dominant mechanism responsible for this detrimental phenomenon. In this presentation, proposed origins and corresponding solutions to the droop-causing mechanisms will be reviewed and discussed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.7
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• pp.4489-4493
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• 2014

LED light driving device has problems in efficiency and heating at higher than 150W. In addition, there is inconvenience in replacing the lighting device to another when W is not the same as the previous one. In this paper, a multi-channel LED light driver, driver embedded driver circuit in a multi-channel structure with a power system in the driver-interlocking structure was designed. With the auto control converter structure with a power efficiency above 93% and power factor above 0.98, the weight of the high efficiency LED lighting-actuating device in driver-interlocking structure, a driver in self-calibrating self-optimization structure. In this paper, at below 10% THD, the existing converter contrast weight was reduced by 40% or more.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.6
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• pp.9-17
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• 2011

The high-power LED (Light Emitting Diode) which is recently gaining popularity as a digital light source has such advantages as low power consumption, long life, fast switching speed, and high efficiency. Thus, many efforts are being made to use the high-power LEDs for general lighting. This paper proposes LED driving circuit uses a DC/DC converter that can recover energy to compensate for the current variations caused by changes in LED equivalent resistance following a temperature change instead of serial resistance. The maximum input voltage of this DC/DC converter has low voltage variations by temperature change when the rated current is formed. In order to return current to the input side, we need a high boosting at low power. Thus, to improve the low efficiency of power converter, the power converter can be configured in such a way to gather the powers of low-capacity DC/DC converters and return the total power. Experiments showed that the proposed system improved efficiency compared to the conventional LED drive using the existing DC/DC converter.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.41 no.6
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• pp.511-517
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• 2008

The radiation characteristics and economic efficiency of high - luminance light - emitting diodes (LEDs), a metal halide lamp, and a halogen lamp were studied to evaluate their potential as an energy-saving light source for fishing lamps. The wavelengths at which irradiance was maximum were 709, 613, 473, 501, 525, 465, 578, and 973 nm for red, orange, blue, peacock blue, green, and white LEDs, the metal halide lamp, and the halogen lamp, respectively. If the irradiance characteristics at 300-1,100 nm wavelengths are set as 100%, the irradiance rates at 381-780 nm were 99-78%, 82%, and 24% for the LEDs, metal halide lamp, and halogen lamp, respectively. The economic efficiency was superior in the order metal halide lamp, halogen lamp, peacock blue LED, and blue LED at 381-780 nm and metal halide lamp, peacock blue LED, blue LED, and halogen lamp at 480-520 nm. Based on the radiation characteristics and economic efficiency evaluated at 480-520 nm, the blue and peacock blue LED light sources can be used as energy-saving light sources for fishing lamps.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.171-171
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• 2012

In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.89-89
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.