• Title/Summary/Keyword: High light efficiency

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Correlation between optimized thicknesses of capping layer and thin metal electrode for efficient top-emitting blue organic light-emitting diodes

  • Hyunsu Cho;Chul Woong Joo;Byoung-Hwa Kwon;Chan-mo Kang;Sukyung Choi;Jin Wook Sin
    • ETRI Journal
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    • v.45 no.6
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    • pp.1056-1064
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    • 2023
  • The optical properties of the materials composing organic light-emitting diodes (OLEDs) are considered when designing the optical structure of OLEDs. Optical design is related to the optical properties, such as the efficiency, emission spectra, and color coordinates of OLED devices because of the microcavity effect in top-emitting OLEDs. In this study, the properties of top-emitting blue OLEDs were optimized by adjusting the thicknesses of the thin metal layer and capping layer (CPL). Deep blue emission was achieved in an OLED structure with a second cavity length, even when the transmittance of the thin metal layer was high. The thin metal film thickness ranges applicable to OLEDs with a second microcavity structure are wide. Instead, the thickness of the thin metal layer determines the optimized thickness of the CPL for high efficiency. A thinner metal layer means that higher efficiency can be obtained in OLED devices with a second microcavity structure. In addition, OLEDs with a thinner metal layer showed less color change as a function of the viewing angle.

Bandwidth-Efficient Precoding Scheme with Flicker Mitigation for OFDM-Based Visible Light Communications

  • Kim, Byung Wook;Jung, Sung-Yoon
    • ETRI Journal
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    • v.37 no.4
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    • pp.677-684
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    • 2015
  • Recently, orthogonal frequency-division multiplexing (OFDM) was applied to VLC systems owing to its high rate capability. On the other hand, a real-valued unipolar OFDM signal for VLC significantly reduces bandwidth efficiency. For practical implementation, channel estimation is required for data demodulation, which causes a further decrease in spectral efficiency. In addition, the large fluctuation of an OFDM signal results in poor illumination quality, such as chromaticity changes. This paper proposes a spectrally efficient method based on a hidden-pilot-aided precoding technology for VLC with less flickering than a conventional OFDM-based method. This approach can obtain channel information without any loss of bandwidth efficiency while ensuring illumination quality by reducing the flickering effect of an OFDM-based VLC. The simulation results show that the proposed method provides a 6.4% gain in bandwidth efficiency with a 4% reduction in flicker compared to a conventional OFDM-based method.

White Light Emission with Quantum Dots: A Review

  • Kim, Nam Hun;Jeong, Jaehak;Chae, Heeyeop
    • Applied Science and Convergence Technology
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    • v.25 no.1
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    • pp.1-6
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    • 2016
  • Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

Efficient Organic Light-emitting Diodes with Aluminum-doped Zinc Oxide Anodes (알루미늄 도핑된 산화아연 양극을 적용한 고효율 유기발광다이오드)

  • Lee, Ho-Nyeon;Lee, Young-Gu;Jung, Jong-Guk;Lee, Seung-Eui;Oh, Tae-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.8
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    • pp.711-715
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    • 2007
  • Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

Reducing Efficiency Droop in (In,Ga)N/GaN Light-emitting Diodes by Improving Current Spreading with Electron-blocking Layers of the Same Size as the n-pad

  • Pham, Quoc-Hung;Chen, Jyh-Chen;Nguyen, Huy-Bich
    • Current Optics and Photonics
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    • v.4 no.4
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    • pp.380-390
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    • 2020
  • In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

Enhanced Light Harvesting from F$\ddot{o}$rst-type resonance Energy Transfer in the Quasi-Solid State Dye-Sensitized Solar Cells (F$\ddot{o}$rst energy transfer 를 적용한 준고체 DSSC 의 효율향상)

  • Cheon, Jong Hun;Lee, Jeong Gwan;Yang, Hyeon Seok;Kim, Jae Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.117.1-117.1
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    • 2011
  • We have demonstrated Forst-type resonance energy transfer (FRET) in the quasi-solid type dye-sensitized solar cells between organic fluorescence materials as an energy donor doped in polymeric gel electrolyte and ruthenium complex as an energy acceptor on surface of $TiO_2$. The strong spectral overlap of emission/absorption of energy donor and acceptor is required to get high FRET efficiency. The judicious choice of energy donor allows the enhancement of light harvesting characters of energy acceptor in quasi-solid dye sensitized solar cells which increase the power conversion efficiency. The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

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The effecal of irradiance during leaf development on photoinhibition in Panag ginseng C. A. Meyer

  • Parmenter, Graeme;Littlejohn, Roger
    • Journal of Ginseng Research
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    • v.22 no.2
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    • pp.102-113
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    • 1998
  • This experiment used chlorophyll fluorescence techniques to assess the effect of irradiant during leaf development on photoinhibition of photosynthesis in Panax ginseng. Seedlings of p. ginseng were grown in the 91asshouse at four shade levels. The maximum mid-day irradiant in each treatment between emergence (January 4) and completion of the experiment (February 25) was 1220, 485, 235, 125 $\mu$mol/$\textrm{m}^2$/s. To assess the rapidity of photosynthetic readaptation to changes in light levels, fluorescence parameters (Fo, F, Fm, Fm', AF/Fm;, Fv/Fm) were measured for three days before and after transfer of plants (on February 21) from each light treatment into each of the other light treatments. Before transfer, dark adapted values of Fv/Fm in the 1220 (0.699) and 485 (0.739) treatments were different from each other and lower than values in the 235 (0.764) and 125 (0.768) treatments, indicating mild photoinhibition. Patterns of change in F during the day also differed between treatments, with low light treatments tracking irradiant levels, but F in the high light treatment (1220) declined in the morning, presumably due to fluorescence quenching. Although plants grown at high irradiant had relatively low photosynthetic efficiency, relative electron transport rate was greater than in lower irradiant treatments. After transfer, plants adopted the daily pattern of change in F of the treatment to which they were moved with little change in absolute levels of F, except in plants transferred from the highest (1220) to the lowest light level (125), where F increased over the course of the three days following transfer. After plants were transferred, Fm' converged on values similar to those in plants raised in the treatments to which they were moved. Values of Fv/Fm in plants moved from low to high light declined dramatically, but there was no decline in plants from 485 moved to 1220. Values of Pv/Fm in plants that were moved from high light to lower light increased to values above those recorded in plants raised in the lower light treatments. Reductions in quantum efficiency caused by photoinhibition at high irradiant may be more than compensated for by higher electron transport rates, although evidence suggests that under high irradiant this tends to be balanced by reduced leaf area and earlier senescence. Chlorophyll fluorescence techniques appear capable of indicating effects of irradiant induced stress in ginseng, yielding results comparable to those obtained with gas exchange techniques but in less time and with greater replication.

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Implantable and Flexible GaN LED for Biomedical Applications

  • Lee, Geon-Jae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.17.1-17.1
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    • 2011
  • Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as a type of implantable LED biosensor and as a therapy tool.

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