• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.263-268
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• 2003

In this paper, we have investigated double gate (DG) MOSFET structure, which has main gate (NG) and two side gates (SG). We know that optimum side gate voltage for each side gate length is about 3V in the main gate 50nm. Also, we know that optimum side gate length for each for main gate length is about 70nm. DG MOSFET shows a small threshold voltage roll-off. From the I-V characteristics, we obtained IDsat=550$mutextrm{A}$/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V for DG MOSFET with the main gate length of 50nm and the side gate length of 70nm. The subthreshold slope is 86.2㎷/decade, transconductance is 114$mutextrm{A}$/${\mu}{\textrm}{m}$ and DIBL (Drain Induced Barrier Lowering) is 43.37㎷. Then, we have investigated the advantage of this structure for the application to multi-input NAND gate logic. Then, we have obtained very high cut-off frequency of 41.4GHz in the DG MOSFET.

• Journal of Convergence for Information Technology
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• v.11 no.11
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• pp.44-50
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• 2021

Recently, enterprise storage systems that require large-capacity storage devices to accommodate big data have used large-capacity flash memory-based storage devices with high density compared to cost and size. This paper proposes a high-efficiency life prediction method with slope descent to maximize the life of flash memory media that directly affects the reliability and usability of large enterprise storage devices. To this end, this paper proposes the structure of a matrix for storing metadata for learning the frequency of defects and proposes a cost model using metadata. It also proposes a life expectancy prediction policy in exceptional situations when defects outside the learned range occur. Lastly, it was verified through simulation that a method proposed by this paper can maximize its life compared to a life prediction method based on the fixed number of times and the life prediction method based on the remaining ratio of spare blocks, which has been used to predict the life of flash memory.