• Nuclear Engineering and Technology
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• 제29권6호
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• pp.459-467
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• 1997

The steady-state behavior of recycling neutral atoms in a tokamak edge region has been analyzed through a two-dimensional Monte Carlo simulation. A particle tracking algorithm used in earlier research on the neutral particle transport is applied to this Monte Carlo simulation in order to perform more accurate calculations with the EDGETRAN code which was previously developed for a two-dimensional edge plasma transport in the authors' laboratory. The physical model of neutral recycling includes charge-exchange and ionization interactions between plasmas and neutral atoms. The reflection processes of incident particles on the device wall are described by empirical formulas. Calculations for density, energy, and velocity distributions of neutral deuterium-tritium atoms have been carried out for a medium-sized tokamak with a double-null configuration based on the KT-2 conceptual design. The input plasma parameters such as plasma density, ion and electron temperatures, and ion fluid velocity are provided from the EDGETRAN calculations. As a result of the present numerical analysis, it is noticed that a significant drop of the neutral atom density appears in the region of high plasma density and that the similar distribution of neutral energy to that of plasma ions is present as frequently reported in other studies. Relations between edge plasma conditions and the neutral recycling behavior are discussed from the numerical results obtained herein.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.178.2-178.2
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• 2013

Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제54권8호
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• pp.365-370
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• 2005

Microwave diagnostics have been widely utilized to measure the important parameters of high temperature and high density plasmas. Reflectometry is known as a promising microwave diagnostic which has a number of merits to measure electron density profiles. In the KSTAR device, X-mode FM reflectometry is planned to measure the plasma density profiles. FM reflectometry is required to extract phase information on raw mixer IF signals, thereby obtaining time-of-flight of reflectometry signals. It is known that the data analysis method is crucial to determine the performance of FM reflectometry In fact, there are several analysis programs which have been utilized in various FM systems. Since each program was developed for a specific device, however, it is difficult to directly apply it to a different reactor like the KSTAR device. It is necessary, therefore, to develop a data analysis program for the KSTAR FM reflectometry. In this paper, complex digital demodulation (CDM) and wavelet transformation are examined in terms of the performance of density profile reconstruction. For the comparison of both methods, FM reflectometry signals are generated on the basis of assumed profiles and the interaction of the X-mode wave and the plasma. In order to see how well both methods work under various conditions, three types of profiles are assumed and noise effects are included. As a result, both methods work well under the condition of gentle density gradient and small noise level. As density gradient becomes steeper and noise level gets higher. the reconstruction performance of wavelet is better than that of CDM.

• Journal of the Korean Society of Propulsion Engineers
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• 제18권1호
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• pp.26-32
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• 2014

In this study, DC (Direct current) type steam plasma igniter is developed for effective ignition of high-energy density metal aluminum and gas temperature is measured by emission spectrum of OH radical. Because of the ultra-high gas temperature, the DC plasma jet is measured by Boltzmann plot method which is the non-contact optical technique and spectrum comparison-analysis. And both methods were applied to experiment after accurate verification. As a result, we could identify that plasma jet temperature is 2900 K ~ 5800 K in the 30 mm range from the nozzle tip.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• The Korean Journal of Physiology
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• 제24권2호
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• pp.331-344
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• 1990

What makes glucose transport function sensitive to insulin in one cell type such as adipocyte, and insensitive in another such as liver cells is unresolved question at this time. Recently it is known that insulin stimulates glucose transport in adipocytes largely by redistributing transporter from the storage pool that is included in a low density microsomal fraction to plasma membrane. Therefore, insulin sensitivity may depend upon the relative distribution of gluscose transporters between the plasma membrane and in an intracellular storage compartment. In hepatocytes, the subcellular distribution of glucose transporter is less well documented. It is thus possible that the apparent insensitivity of the hepatocyte system could be either due to lack of the constitutively maintained, intracellular storage pool of glucose transporter or lack of insulin-mediated transporter translocation mechanism in this cell. In this study, I examined if any intracellular glucose transporter pool exists in hepatocytes and this pool is affected by insulin. The results obtained summarized as followings: 1) Distribution of subcellular fractions of hepatocyte showed that there are $24.9{\pm}1.3%$ of plasma membrane, $36.9{\pm}1.7%$ of nucleus-mitochondria enriched fraction, $23.5{\pm}1.2%$ of lysosomal fraction, $9.6{\pm}1.0%$ of high density microsomal fraction and $4.9{\pm}0.5%$ of low density microsomal fraction. 2) In adipocyte, there were $29.9{\pm}2.6%$ of plasma membrane, $19.4{\pm}1.9%$ of nucleus-mitochondria enriched fraction, $26.7{\pm}1.8%$ of high density microsomal fraction and $23.9{\pm}2.1%$ of low density microsomal fraction. 3) Surface labelling of sodium borohydride revealed that plasma membrane contaminated to lysosomal fraction by $26.8{\pm}2.8%$, high density microsomal fraction by $8.3{\pm}1.3%$ and low density microsomal fraction by $1.7{\pm}0.4%$ respectively. 4) Cytochalasin B bound to all of subcellular fractions with a Kd of $1.0{\times}10^{-6}M$. 5) Photolabelling of cytochalasin B to subcellular fractions occurred on 45 K dalton protein band, a putative glucose transporter and D-glucose inhibited the photolabelling. 6) Insulin didn't affect on the distribution of subcellular fractions and translocation of intracellular glucose transporters of hepatocytes. 7) HEGT reconstituted into hepatocytes was largely associated with plasma membrane and very little was found in low density microsomal fraction which equals to the native glucose transporter distribution. Insulin didn't affect on the distribution of exogeneous glucose transporter in hepatocytes. From the above results it is concluded that insulin insensitivity of hepatocyte may due to lack of intracellular storage pool of glucose transporter and thus intracellular storage pool of glucose transporter is an essential feature of the insulin action.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제11권5호
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• pp.231-237
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• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제53권8호
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• pp.433-442
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• 2004

Various models and various boundary conditions have been suggested for fluid transport simulations of high density plasma discharges such as the inductively coupled plasma discharge. In this work, we compare the various models using one-dimensional simulations based on the FDM(finite difference method), the upwind scheme, the power-law scheme, and the dielectric relaxation scheme［l］ Comparing the exactness, the numerical stability and the efficiency of the various models. the most adoptable model is suggested.

• Journal of the Korean Vacuum Society
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• 제17권5호
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• pp.426-434
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• 2008

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.