• 제목/요약/키워드: High density electron beam

검색결과 130건 처리시간 0.031초

Development of Multimedia CRTs Using Low-Voltage-Drive Electron Guns

  • Soichiro, Okuda;Tetsuya, Shiroishi;Shuhei, Nakata;Katsumi, Oono;Fumiaki, Murakami;Hideya, Itoh
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.379-381
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    • 2002
  • Mitsubishi Electric Corporation has marketed a series of multimedia CRTs enabling bright picture windows in a high-resolution date display screen. The key components of the multimedia CRTs named Diamondtran $M^2$ are a high-gm (low drive-voltage) electron gun and an aperture grille mask. A high-gm electron gun has been developed by designing a beam forming region with high-gm configuration combining with a high current-density cathode. The development of next generation high-gm guns are also introduced

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Dielectric 마스크 적용 UV 레이저 프로젝션 가공을 이용한 빌드업 필름 내 선폭 10μm급 패턴 가공 연구 (DPSS UV laser projection ablation of 10μm-wide patterns in a buildup film using a dielectric mask)

  • 손현기;박종식;정수정;신동식;최지연
    • 한국레이저가공학회지
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    • 제16권3호
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    • pp.27-31
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    • 2013
  • To engrave high-density circuit-line patterns in IC substrates, we applied a projection ablation technique in which a dielectric ($ZrO_2/SiO_2$) mask, a DPSS UV laser instead of an excimer laser, a refractive beam shaping optics and a galvo scanner are used. The line/space dimension of line patterns of the dielectric mask is $10{\mu}m/10{\mu}m$. Using a ${\pi}$ -shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam; and a telecentric f-${\theta}$ lens focuses it to a $115{\mu}m{\times}105{\mu}m$ flat-top beam on the mask. The galvo scanner before the f-${\theta}$ lens moves the beam across the scan area of $40mm{\times}40mm$. An 1:1 projection lens was used. Experiments showed that the widths of the engraved patterns in a buildup film ranges from $8.1{\mu}m$ to $10.2{\mu}m$ and the depths from $8.8{\mu}m$ to $11.7{\mu}m$. Results indicates that it is required to increase the projection ratio to enhance profiles of the engraved patterns.

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전자선 경화를 이용한 에폭시 수지의 열안정성과 경화동력학에 관한 연구 (Studies on Thermal Stability and Cure Behavior of Epoxy Resins using Electron-beam Curing Technique)

  • 박수진;허건영;이재락
    • Composites Research
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    • 제15권2호
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    • pp.40-47
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    • 2002
  • 이관능성 에폭시 수지인 DGEBA와 DGEBF를 양이온 촉매인 BQH를 사용하여 전자선(electron-beam) 경화 기술에 의해 경화하였다. 그리고 수지의 구조적 차이가 열안정성과 경화동력학에 미치는 영향을 연구하였다. 실험적 결과에 의하면, Horowitz-Metzger 법에 의한 분해 활성화 에너지는 DGEBA의 경우가 높았지만 적분 열분해 온도(IPDT)는 DGEBA가 DGEBF 보다 낮았다. 이것은 DGEBF 주사슬의 수소 결합으로 인해 가교밀도가 높아졌기 때문인 것으로 사료되며, 근적외선 분광기(NIRS)를 사용하여 $5235\;cm^{-1}$$7000\;cm^{-1}$에서의 hydroxyl band의 증가로 확인하였다.

전자빔 처리가 대마 인피섬유의 펄프화 및 초지 특성에 미치는 영향 (Effects of Electron Beam Treatment on the Characteristics of Pulping and Papermaking of Hemp Bast Fibers)

  • 배백현;서재환;정진호;이재정;백기현;김형진
    • 펄프종이기술
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    • 제44권4호
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    • pp.51-61
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    • 2012
  • The new alkali pulping process combined with electron beam treatment was applied to utilize hemp bast tissues as a new valuable fibrous resource. Hemp bast tissues have some chemical properties with high lignin contents and holocellulose not to be defiberized by alkali pulping only, compared with the bast tissue of paper mulberry. To make up for the weakness of traditional alkali pulping process, electron beams were directly irradiated into the swelled bast tissue of hemp in NaOH solution and distilled water, and then facilitated the defiberization of hemp bast tissues. The papermaking from hemp bast fibers manufactured by the combination pulping process showed good apparent density, formation structure and air permeability, and had some mechanical properties with lower tensile, tear, burst strength and folding endurance. It is finally concluded that the combination pulping process with electron beam treatment could be suggested a new alternative for non-woody fibers.

SEM을 이용한 미세 접합 시스템 개발 (A Development of SEM Applied Microjoining System)

  • 황일한;나석주
    • Journal of Welding and Joining
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    • 제21권4호
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    • pp.63-68
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    • 2003
  • Scanning electron microscopy (SEM) has been used as a surface measurement instrument and a tool for lithography in semiconductor process due to its high density localized beam. For those purposes, however, the maximum current of SEM Is less than 100pA, which is not enough fo material processing. In this paper SEM was modified to increase the amount of current reaching a specimen from gun part where current is generated, the possibility of applying SEM to material processing, especially microjoining, was investigated. The maximum current of SEM after modifications was measured up to 10$\mu$A, which is about 10$^{5}$ times greater than before modifications. Through experiments such as eutectic solder wetting on thin 304 stainless steel foil and microjoining of 10$\mu$m thick 304 stainless steel, the intensity of electron beam of SEM proved to be great enough fur material processing as heat source. And a tight jig system was found necessary to hold materials close enough fur successful microloining.

고에너지 전자빔 투사를 이용한 TiC, TiB2 및 VC/ 탄소강 표면합금화 연구 (Study of Surface Alloying of TiC, TiB2 and VC with Carbon Steel Using High Energy Electron Beam Irradiation)

  • 유정훈;신기삼;윤재홍;이찬규;허성강;이재현;오준철;이성학;어광준
    • 한국재료학회지
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    • 제12권12호
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    • pp.904-910
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    • 2002
  • Surface alloying using TiC, $TiB_2$ and VC ceramic particles on carbon steel has been performed using high voltage electron beam. Each type of ceramic particles was mixed with flux of Al and $MgF_2$ in 1 to 4 ratio. The microstructures of the surface alloyed layers consisted of melted region, interface region. heat affected region and the unaffected matrix. The surface layer of the TiC surface alloyed had a cubed primary and a eutectic type of TiC. $TiB_2$ in surface layer of $TiB_2$ surface alloyed were incompletely melted with$ TiB_2$ particles as observed before the alloying. On the surface layer of the VC surface alloyed, very well defined cell structure was observed with VC on the cell boundary. In addition, ~50 nm in diameter VC particles in high density were ubiquitous in the matrix. Those fine VC particles prominently improved the hardness and wear resistance of the surface layer of the VC surface alloyed.

하이퍼써멀 에너지 영역에서 높은 플럭스 입자빔 생성을 위한 플라즈마 발생원 (Plasma Sources for Production of High Flux Particle Beams in Hyperthermal Energy Range)

  • 유석재;김성봉
    • 한국진공학회지
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    • 제18권3호
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    • pp.186-196
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    • 2009
  • 하이퍼써멀 영역의 에너지 ($1{\sim}100\;eV$), 특히, 50 eV 이하의 에너지를 갖는 높은($10^{16}$ particles/$cm^2\;s$ 이상) 플럭스의 이온빔을 직접 인출하기는 어렵지만, 이온을 중성화한 중성입자빔 경우에는 가능하다. 높은 플럭스의 하이퍼써멀 중성입자빔을 생성하고 효율적으로 수송하기 위해서는 낮은 플라즈마 운전압력(0.3 mTorr 이하)에서도 높은 이온밀도($10^{11}\;cm^{-3}$ 이상)를 유지할 수 있는 대면적 플라즈마 발생원이 요구된다. 이러한 하이퍼써멀 중성입자빔의 생성을 위해 요구되는 플라즈마 발생원을 구현하기 위해서는 자기장에 의한 전자가둠 방식이 도입되어야 하는데, 영구자석을 이용한 다양한 자기장 구조를 갖는 Electron Cyclotron Resonance (ECR) 플라즈마 발생 방식이 하나의 해결 방법이 될 수 있음을 제안하였다. 여기에는 마그네트론 구조를 갖는 자기장을 채택한 평면형 ECR 플라즈마 발생 방식과 원통형 플라즈마 용기 외벽 둘레에 영구자석 어레이를 설치하여 축방향 자기장을 형성하고 용기 중심부에 전자를 가두는 원통형 방식이 있다. 두 경우 모두 기본적으로 mirror field 구조에 의한 전자 가둠을 기반으로 하고 전자의 drift에 의해 더욱 효율적으로 전자를 플라즈마 공간에 가두는 방식을 도입하고 있어서 낮은 운전압력에서도 높은 밀도의 플라즈마를 발생시키고 유지할 수 있다.

전자선 가교 방법을 이용한 탄소/탄화규소 복합재 제조 및 특성 (Fabrication and Characterization of C/SiC Composite by Electron Beam Curing)

  • 신진욱;전준표;강필현
    • 폴리머
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    • 제33권6호
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    • pp.575-580
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    • 2009
  • 폴리카보실란에 탄소직물을 보강제로 이용하여 제조한 탄소/탄화규소 복합재는 좋은 내산화 특성과 열 충격에 강한 특성으로 인해 높은 온도의 구조체에 적용되고 있다. 본 연구에서는 고분자 함침 열분해법을 이용하여 탄소직물에 폴리카보실란 용액을 함침한 후, 전자선을 이용하여 가교하고, 열분해 과정을 통해 탄소/탄화규소 복합재로 제조하였다. 실험 결과 복합재 시료의 공극률과 밀도는 각각 13.5%와 $2.44\;g/cm^3$을 나타냈고, 내산화 특성은 지속적인 고온의 산화 분위기에서 95.9%의 잔류량을 나타내어 본 연구에서 제조한 탄소/탄화규소 복합재의 우수한 내산화 특성을 확인하였다.

실리콘과 코발트 박막의 계면구조에서 발생하는 1/f 잡음현상 연구 (Generation of 1/f Noise in Interfacial Structures between Silicon Substrate and Cobalt Thin Film)

  • 조남인;남형진;박종윤
    • 한국진공학회지
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    • 제5권1호
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    • pp.48-53
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    • 1996
  • We present a microscopic description for generation of 1/f noise in interfaces between cobalt thin film and silicon substrate. Along with surface resistance measurements and transmission electron diffraction observations. 1/f noise power spectral density has been measured for the interfacial structures at the liquid nitrogen temperature . The cobalt films have been deposited by the electron-beam evaporation technique onto p-type (100) silicon in the high vacuum condition. The measured noise power spectral density shows highest magnitude near the structural transition and metallization transition region. The noise magnitude rapidly decreased after the cobalt silicide nucleation. The noise parameter is concluded to be originated form the structural fluctuations.

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