• 조명전기설비학회논문지
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• 제20권7호
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• pp.6-13
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• 2006

각 종 전자 디바이스의 투명전도막으로 많이 사용되는 ITO 및 ZnO:Al 박막을 스퍼터링법에 의해 제작하였다. 가스압력 및 기판온도 등의 최적조건하에서 제작된 ITO 및 ZnO:Al 박막은 각각 $1.67{\times}10^{-3}[{\Omega}-cm]$ 및 $2.2{\times}10^{-3}[{\Omega}-cm]$의 비저항율과 89.61[%] 및 90.88[%]의 가시광 영역에서의 광투과율을 나타내었다. ZnO:Al과 ITO 투명전극을 이용하여 5인치의 PDP 셀을 동일한 제조조건하에서 제작하였다. ZnO:Al의 경우 Ne(base)-Xe(8%)의 가스 혼합비, 그리고 400[Torr]의 압력조건에서 가장 잘 동작되었으며, $200{\sim}300$[V]의 인가전압 범위에서 $836[cd/m^2]$의 평균휘도를 나타내었다. 고휘도 및 저 소비전력특성을 위한 중요한 파라메타인 광효율은 전원 주파수가 $10{\sim}50[Khz]$의 범위에서 $1.2{\sim}1.6[lm/W]$정도를 나타내었으며, ITO의 경우 휘도 및 광 발생 효율은 약 10[%]정도 상승하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].

• Applied Microscopy
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• 제45권4호
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• 대한기계학회논문집B
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• 제23권11호
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• pp.1473-1480
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• 1999

In the case of Impingement of plane moving shock wave over concave or convex double wedges (pseudo-stationary flow) and cylindrical walls (truly non-stationary flow), it Is expected that there are transitions from regular reflection to Mach reflection or vice versa In shock wave reflections. In these connections, it is necessary to verify the various of reflection process and transition angle for the reflection problems In double wedges, and to verify the transition angle, effects of curvature radius and initial wall angle on it for the reflection problems In cylindrical walls. Especially, we focused our attention to confirm the existence of hysteresis phenomenon induced by the different transition processes, and Neumann paradox, which is a small discrepancy between theoretical and experimental transition angles. Experiments were carried out by using the shock tube of $6{\times}6cm^2$, and high speed photographic technique consisted of delay unit, triggering system, light source of Xe lamp and so on was used for flow visualization.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1613-1616
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• 2007

A microgripper using thermal actuator and SU-8 polymer was designed and fabricated to manipulate cells and microparts. A chip size of a microgripper was 3 mm ${\times}$ 5 mm. The thermally actuated microgripper consisted of two couples of hot and cold arm actuators. The high thermal expansion coefficient, 52 $ppm/^{\circ}C$, of SU-8 compared to silicon and metals, allows the actuation of the microgripper. Thickness and width of SU-8 as an end-effector were 26 ${\mu}m$ and 80 ${\mu}m$, respectively. Initial gap between left jaw and right jaw was 120 ${\mu}m$. The ANSYS program as FEM tool was introduced to analyze the thermal distribution and displacement induced by thermal actuators. $XeF_2$ gas was used for isotropic silicon dry etching process to release SU-8 end-effector. Mechanical displacements of the fabricated microgripper were measured by optical microscopy in the range of input voltage from 0 V to 2.5 V. The maximum displacement between two jaws of a microgripper Type OG 1_1 was 22.4 ${\mu}m$ at 2.5 V.

• 한국대기환경학회지
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• 제22권6호
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• pp.922-928
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• 2006

An absolute absorption cross section of benzene was measured with a spectrometer system including a mono-chrometer and a grating in the wavelength region of $240{\sim}280nm$ under the atmospheric pressure and room temperature in the laboratory. A certificated reference benzene gas ($98{\mu}mol/mol$ in $N_2$) was used to measure its absorption cross section. A 710 mm cell with a quartz window and a 150 W Xe arc lamp were employed. The magnitude of absorption cross section of $1.41{\times}10^{-18}cm^2$ was lower than that of the reference spectra ($2.5{\times}10^{-18}cm^2$) of high resolution spectrometer, Total measurement uncertainty was estimated to be 4.0%.

• Journal of Information Display
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• 제3권1호
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• pp.11-16
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• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1617-1620
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• 2008

The effects of the temporal and permanent bright image stickings were examined under variable panel working gas pressure in the 42-in. ac-PDP with a high Xe (11 %) content. In the cells with and without temporal and permanent bright image stickings, the display luminance, firing voltage, and Vt closed curve were measured relative to the working gas pressure. With a decrease in the working gas pressure, the temporal bright image sticking was observed to be reduced, whereas the permanent bright image sticking was observed to be deteriorated.

• 한국가시화정보학회지
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• 제15권1호
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• pp.53-63
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• 2017

Sonic and supersonic jets include many complicated flow physics associated with shock waves, shear layers, vortices as well as strong interactions among them, and have a variety of engineering applications. Much has been learned from the previous researches on the sonic and supersonic jets but quantitative assessment of these jets is still uneasy due to the high velocity of flow, compressibility effects, and sometimes flow unsteadiness. In the present study, the sonic jets issuing from a convergent nozzle were measured by PIV and Schlieren optical techniques. Particle Image Velocimetry (PIV) with Olive oil particles of $1{\mu}m$ was employed to obtain the velocity field of the jets, and the black-white and color Schlieren images were obtained using Xe ramp. A color filter of Blue-Green-Red has been designed for the color Schlieren and obtained from an Ink jet printer. In experiments, two types of sonic nozzles were used at different operating pressure ratios(NPR). The obtained images clearly showed the major features of the jets such as Mach disk, barrel shock waves, jet boundaries, etc.

• 한국태양에너지학회 논문집
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• 제37권2호
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• pp.13-22
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• 2017

Two-step water splitting thermochemical cycle with $CeO_2/ZrO_2$ foam device was investigated by using a solar simulator composed of 2.5 kW Xe-Arc lamp and mirror reflector. The hydrogen production of $CeO_2/ZrO_2$ foam device depending on heat recovery of Thermal-Reduction step and Water-Decomposition step was analyzed, and the hydrogen production of $CeO_2/ZrO_2$ and $NiFe_2O_4/ZrO_2$ foam devices was compared. Resultantly, the quantity of hydrogen generation increased by 52.02% when the carrier gas of Thermal-Reduction step is preheated to $200^{\circ}C$ and, when the $N_2/steam$ is preheated to $200^{\circ}C$ in the Water-Decomposition step, the quantity of hydrogen generation increased by 35.85%. Therefore, it is important to retrieve the heat from the highly heated gases discharged from each of the reaction spaces in order to increase the reaction temperature of each of the stages and thereby increasing the quantity of hydrogen generated through this.