• 반도체디스플레이기술학회지
• /
• 제16권2호
• /
• pp.49-54
• /
• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• 대한전자공학회논문지SD
• /
• 제37권7호
• /
• pp.50-57
• /
• 2000

본 논문에서는 고속 FPGA 설계를 위한 논리 수준의 조합회로 합성 알고리듬을 제안한다. FPGA는 현장에서 직접 제작이 가능하고 제작 시간이 짧으며 제작 비용이 저렴하므로 초기 prototype 시스템의 제작에 자주 사용되고 있으나, ASIC 칩에 비해 지연시간이 크고 집적도가 떨어지는 단점이 있다. 제안된 알고리듬은 회로의 지연시간을 줄이기 위해 critical path를 분할한 후 분할된 회로를 동시에 수행하는 구조의 회로를 생성한다. MCNC 표준 테스트 회로에 대한 실험에서 제안된 지연시간 최적화 알고리듬이 기준 알고리듬에 비해 지연시간이 평균 19.1% 감소된 회로를 생성함을 보였다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
• /
• 제51권12호
• /
• pp.676-681
• /
• 2002

This paper presents the implementation and experimental investigation of sensorless speed control for a variable-speed PMSM(Permanent Magnet Synchronous Motor) in super-high speed compressor operation. The proposed control scheme consists of two different sensorless algorithms to guarantee the reliable starting operation in low speed region and full torque characteristics using the vector control in high speed region. An automatic switching technique between two control modes is proposed to minimize the speed and torque pulsation during the switching instant of control mode. A testing system of 3.3㎾ PMSM has been built and 90% load test results at 7000r/min are presented to examine the feasibility of proposed sensorless control scheme.

• 조명전기설비학회논문지
• /
• 제27권12호
• /
• pp.87-92
• /
• 2013

In high-speed train, the EMI is generated by pantograph detachment and switching device of motor-block. Especially, the conductive noise flows through rail as return feeder influences unintended results to sub-station, transformer, etc. These phenomena were investigated by PSIM circuit analysis tool and each part of railway system is modeled by circuit elements and switching devices. Consequently, the distorted wave in return feeder current occurs by the high speed switching frequency, and the overvoltage is applied by the pantograph detachment. Also the distortion of return current is high in starting point and it decreases from the proximity of a starting point ro the end of terminal.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
• /
• 제11B권4호
• /
• pp.185-192
• /
• 2001

In SRM drive, the ON·OFF angles of each phase switch should be accurately controlled in order to control the torque and speed stably. The accuracy of the switching angles is dependent upon the resolution of the encoder and the sampling period of the microprocessor, that are used to provide the information of the rotor position and to control the SRM power circuit, respectively. However, as the speed increases, the amount of the switching angle deviation from the preset values is also increased. Therefore, the low cost encoder suitable for the practical and stable SRM drive is proposed and the control algorithm to provide the switching signals using the simple digital logic circuit is also presented in this paper, As a result, a stable high speed SRM drive can be achieved by the high resolution switching angle control and it is verified from the experiments that the proposed encoder the logic controller can be a powerful candidate for the practical low cost SRM drive.

• 한국정보처리학회논문지
• /
• 제6권11S호
• /
• pp.3190-3198
• /
• 1999

Because of the rapid growth of the mobile communication, the need for the mobile internet access has grown up as well. since the current mobile communication network, however, is optimized for a voice communication system, which exclusively occupies a channel for a given time, it is not suitable for variable rate packet data. In order to support the mobile internet access, it is essential do design a reasonable packet switching network which supports the mobility. Since mobile packet network has longer latency, high speed switching and QoS are required to meet the user's requirements. In this paper, we suggest an resonable way to construct a network and its operation procedures utilizing GPRS(General Packet Radio Service) network and MPLS(Multi Protocol Label Switching) to provide a high speed switching and QoS mobile internet access. GPRS is used as a network which supports the mobility and MPLS guarantees the QoS and high speed IP protocol transmission based on the ATM switching technology.

• 전기학회논문지
• /
• 제62권2호
• /
• pp.278-283
• /
• 2013

With the increasing power demands, size of the fault current in electrical grids is steadily increasing, and it exceeds the breaking capacity of circuit breakers. To effectively cope with these problems, a high-speed interrupter was suggested. The high-speed interrupter provides fault current with a bypass to a fault current limiter in case of accidents and consequently, fault current can be restricted. In this study, behavioral characteristics of high-speed interrupter were analyzed by accident types occurred in a distribution system. When accidents occurred, a and b contact of the high-speed interrupter were turned-off and then, turned-on. Accordingly, fault current flowed to the circuit connected to a current limiting element, and the fault current limiter restricted fault current to within a half-cycle. Nevertheless, the behavior of the high-speed interrupter was slowed down by a switching surge. As a result, fault current was confirmed to be restricted not to within the anticipated half-cycle, but to after a half-cycle. Moreover, the behavioral characteristics of the high-speed interrupter changed not only by accident types, but by behaviors of R, S, and T phases. This was due to the errors in stroke lengths of the high-speed interrupters, which resulted in a slight time discrepancy among three interrupters. In addition, the switching behaviors of the b and a contact were confirmed not to have coincided due to the switching surge; b contact behaved first and a contact followed. because of this, accuracy of stroke length and switching surges through the solenoid suction increases may be necessary to resolve.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2017년도 전력전자학술대회
• /
• pp.577-595
• /
• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• 전자공학회논문지A
• /
• 제28A권5호
• /
• pp.370-374
• /
• 1991

A high performance fully ion-implanted InP JFET was characterized for high speed switching elements. The switch has an insertion loss of 5.5dB with 31.6dB isolation at 1GHz. This device can effectively swithc a byte-multiplexed 2Gb/s signal and an eye-diagram taken at 2Gb/s shows an error-free eye pattern. Therefore, this device can be used as a switching element for high transmission data rate for monolithic integration of optoelectronic circuit in the long-wavelength region.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 2009년도 춘계학술대회 논문집 특별세미나,특별/일반세션
• /
• pp.623-628
• /
• 2009

There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.