• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.54-55
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• 2010

Vacancy defects in graphene can be created by electron or ion irradiation and those induce ripples which can change the electronic properties of graphene. Recently, the formation of defect structures such as vacancy defects and non-hexagonal rings has been reported in the high resolution transmission electron microscope (HR-TEM) of reduced graphene oxide [1]. In those HR-TEM images, it is noticed that the dislocations with pentagon-heptagon (5-7) pairs are formed and diffuses. Interestingly, it is also observed that two 5-7 pairs are separated and diffuse far away from each other. The separation of 5-7 pairs has been known to be due to their self-diffusion. However, from our tight-binding molecular dynamics simulation, it is found that the separation of 5-7 pairs is due to the diffusion of single vacancy defects and coalescence with 5-7 pairs. The diffusion and coalescence of single vacancy defects is too fast to be observed even in HR-TEM. We also implemented Van der Waals interaction in our tight-binding carbon model to describe correctly bi-layer and multi-layer graphene. The compressibility of graphite along c-axis in our tight-binding calculation is found to be in excellent agreement with experiment. We also discuss the difference between single layer and bi-layer graphene about vacancy diffusion and reconstruction.

• Journal of the Korean Society of Marine Environment & Safety
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• v.22 no.5
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• pp.547-553
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• 2016

Black carbon (BC) contained in particulate matter (PM) originating from the exhaust gases of ships' diesel engines has been receiving great attention as a cause of glacial melting and warming in the polar regions. In this study, we took samples from various locations of PM emitted from the training ship (T/S) HANBADA's main engine, in cooperation with the Korea Maritime and Ocean University. We analyzed the structure and characteristics of these samples using high-resolution transmission electron microscopy (HR-TEM) and applied our findings as fundamental research for developing PM reduction technology. We also employed our results to determine appropriate preemptive action to meet upcoming PM/BC regulations. In addition, we confirmed the emission trend of pollutants from exhaust gases under various engine operating conditions using an exhaust gas analyzer. Results obtained from the analysis of HR-TEM images showed that the structure of the PM is chain-like wispy agglomerates consisting of a number of individual spherical particles. As the sampling location was moved away from the turbo charger (T/C) towards the funnel, more condensates were observed at a low temperature and the molecular structure of the PM lost its characteristic BC structure as an amorphous structure gradually appeared. Furthermore, through the analysis of exhaust gases, we predicted a decrease in PM concentration in the exhaust stream as engine rpm increase.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.28 no.2
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• pp.58-72
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• 2002

The high resolution transmission electron microscope(HRTEM) is one of the most powerful methods fer investigating internal structures of various materials on an atomic scale. In fact, HRTEM images are becoming much more common in scientific papers, and are making valuable contributions to development of industrial products. With rapid improvement of current HRTEMS, their maximum resolution reaches almost 0.1 nm. In this paper we describe the fundamental formulation of the imaging process of HRTEM and their practical application f3r nano materials.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.27-31
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• 2009

Sn whiskers can grow from the pure Sn and high Sn-based finish and cause the electrical shorts and failures. Even with the wealth of information on whiskers, we have neither the clear understanding of whisker growth nor methods for its prevention. In this study, the whisker grain roots which connected with intermetallic layer were analyzed by high-resolution transmission electron microscopy (HR-TEM). In the Sn-Cu plated leadframe (LF) that was stored at ambient condition for 540 days, filament-shaped whiskers were grown on the Sn-plated surface and ${\eta}'-Cu_6Sn_5$ precipitates were widely distributed along the grain boundaries at the Sn matrix. The measured of the lattice fringes at the ${\eta}'-Cu_6Sn_5$ was $4.71{\AA}$ at the coarse grain and $2.91{\AA}$ at the fine grain. The $Cu_3Sn$ which generates the tensile stresses was not observed. The formation of $Cu_6Sn_5$ precipitates and intermetallic layer were strongly related to whisker growth, but, the whisker growth tendency does not closely relate with the geometric morphology of irregularly grown intermetallic compound (lMC).

• Journal of Biomedical Engineering Research
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• v.17 no.4
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• pp.449-458
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• 1996

Most of the conventional electrocardiowaphs foil to detect signals other than P-QRS-T due to the limited SNR and bandwidth. High-resolution electrocardiography(HRECG) provides better SNR and wider bandwidth for the detection of micro-potentials with higher frequency components such as vontricular late potentials(LP). We have developed a HRECG using uncorrected XYZ lead for the detection of LPs. The overall gain of the amplifier is 4000 and the bandwidth is 0.5-300Hz without using 60Hz notch filter. Three 16-bit A/D converters sample X, Y, and Z signals simultaneously with a sampling frequency of 2000Hz. Sampled data are transmitted to a PC via a DMA-controlled, optically-coupled serial communication channel. In order to further reduce the noise, we implemented a signal averaging algorithm that averaged many instances of aligned beats. The beat alignment was carried out through the use of a template matching technique that finds a location maximizing cross-correlation with a given beat tem- plate. Beat alignment error was reduced to $\pm$0.25ms. FIR high-pass filter with cut-off frequency of 40Hz was applied to remove the low frequency components of the averaged X, Y, and Z signals. QRS onset and end point were determined from the vector magnitude of the sigrlaIL and some parameters needed to detect the existence of LP were estimated. The entire system was designed for the easy application of the future research topics including the optimal lead system, filter design, new parameter extraction, etc. In the developed HRECG, without signal averaging, the noise level was less than 5$\mu$V$_rms RTI$. With signal averaging of at least 100 beats, the noise level was reduced to 0.5$\mu$V$_rms RTI$, which is low enough to detect LPs. The developed HRECG will provide a new advanced functionality to interpretive ECG analyzers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Korean Journal of Metals and Materials
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• v.48 no.1
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• pp.57-61
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• 2010

Nanosized surface structures of Cu powders were investigated at the atomic scale by field-emission transmission electron microscope techniques. The nanoscale surface oxide layer on the Cu powder was analyzed to be the $CU_2O$ phase by electron diffraction pattern and electron energy-loss spectroscopy. In addition, it was found from high-resolution transmission electron microscopy study that there are formed no surface oxide layers on the surface of alkanethiol coated Cu powders.

• Applied Microscopy
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• v.45 no.4
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• pp.203-207
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• 2015

Sample preparation is very important for crystal structure analysis of novel nanostructured materials in electron microscopy. Generally, a grid dispersion method has been used as transmission electron microscope (TEM) sampling method of nano-powder samples. However, it is difficult to obtain the cross-sectional information for the tabular-structured materials. In order to solve this problem, we have attempted a new sample preparation method using focused ion beam. Base on this approach, it was possible to successfully obtain the electron diffraction patterns and high-resolution TEM images of the cross-section of tabular structure. Finally, we were able to obtain three-dimensional crystallographic information of novel zeolite nano-crystal of the tabular morphology by applying the new sample preparation technique.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.