• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.89-96
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• 2005

To improve the mean-life and reliability of power cables, we have investigated the volume resistivity and thermal properties demonstrated by changing the content of carbon black, an additive of the semiconductive shield for underground power transmission. Nine specimens were made of sheet form for measurement. Volume resistivity of the specimens was measured by a volume resistivity meter after 10 minutes in a preheated oven at temperatures of both 25$\pm$1[$^{\circ}C$] and 90$\pm$ 1[$^{\circ}C$]. As well, specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from 0[$^{\circ}C$] to 200[$^{\circ}C$], and heating temperature was 4[$^{\circ}C$/min]. From these experimental results, volume resistivity was high according to an increase of the content of carbon black. Specific heat was decreased, while thermal conductivity was increased according to a rise in the content of carbon black. Furthermore, both specific heat and thermal conductivity were increased by heating temperature because the volume of materials was expanded according to a rise in temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.62-66
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• 2002

The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction $^{30}$ Si(n,${\gamma}$)longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$$^{[-10]}$ . The radioactive isotope $^{31}$ Si is formed by $^{31}$ Si capturing a neutron, which then decays into the stable $^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K.

• 한국초전도ㆍ저온공학회논문지
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• 제9권4호
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• pp.37-40
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• 2007

As power demands increase, development of the superconducting fault current limiter (SFCL) is being watched with interest. Many types of SFCLs using various superconducting materials have been developed. Especially, the FCL using coated conductor (CC) has been investigated actively at present. CCs have many advantages for the FCL application. YBCO materials used in CCs have a high n-value, and it is relatively easy to choose a matrix of the CC for high resistivity. If the CC has high resistivity, high voltage can be applied to the CC. Then total length of the CC used in SFCL, which has effects on total price and volume of the SFCL, can be reduced. Short circuit tests of two different types of CCs in the liquid nitrogen bath and its sub-cooled condition were performed and analyzed. An effect of high resistivity of the CC and cooling methods on fault current limiting characteristics could be verified in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.455-458
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• 2002

In this paper, the physical and volume resistivity properties of cross-linked polyethylene (XLPE) for ultra-high voltage investigated due to temperature dependence, and the measurement of volume resistivity used to highmegohm meter is measured from 1 to 30 minutes when the each applied voltage, for example, DC 100[V], 250[V], 500[V] and 1000[V] is applied, according to the step voltage application method. From FT-IR spectrum as an analysis of physical properties, a strong absorption in wavenumbers 700 to 730[$cm^{-1}$ /], 1456[$cm^{-1}$ /] and 2700 to 3000 [$cm^{-1}$ /] observed by the methyl groups(CH$_2$). From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature 60[$^{\circ}C$] and 106.58[$^{\circ}C$].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1361-1363
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• 1998

Poly-Si grain boundaries act as potential barriers as well as recombination centers for the photo-generated carriers in solar cells. Thereby, grain boundaries of poly-Si are considered as a major source of the poly-Si cell efficiency was reduced This paper investigated grain boundary effect of poly-Si wafer prior to the solar cell fabrication. By comparing I-V characteristics inner grain, on and across the grain boundary, we were able to detect grain potentials. To reduce grain boundary effect we carried out pretreatment, $POCl_3$ gettering, and examined carrier lifetime. This paper focuses on resistivity variation effect due to grain boundary of poly-Si. The resistivity of the inner grain was $2.2{\Omega}-cm$, on the grain boundary$2.3{\Omega}-cm$, across the grain boundary $2.6{\Omega}-cm$. A measured resistivity varied depending on how many grains were included inside the four point probes. The resistivity increased as the number of grain boundaries increased. Our result can contribute to achieve high conversion efficiency of poly-Si solar cell by overcoming the grain boundary influence.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.217-221
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• 2008

In this study, We have been investigated the effect of calcination temperature and high-energy ball-milling of powder influences the $BaTiO_3$-based PTCR(Positive Temperature coefficient Resistance) characteristics and microstructure. The mixed powder was obtained from $BaCO_3$, $TiO_2$, $CeO_2$ ball-milled in attrition mill. The mixed powder was calcine from 1000 $^{\circ}C$ to 1200 $^{\circ}C$ in air and then it was sintered in reduction- re-oxidation atmosphere. As a result, The room-temperature electrical resistivity decreased and increased with increasing calcination temperature. specially, Attrition milled powder could have low room-temperature resistivity and high PTC jump order at 1100 $^{\circ}C$. attrition milling had lower room-temperature resistivity than ball milling. Particle size decreased by Attrition milling of powder influences in calcination temperature and room-temperature resistivity.

• 한국재료학회지
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• 제20권5호
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• pp.271-277
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• 2010

In this paper two aspects of the percolation and conductivity of carbon black-filled polyethylene matrix composites will be discussed. Firstly, the percolation behavior, the critical exponent of conductivity of these composites, are discussed based on studying the whole change of resistivity, the relationship between frequency and relative permittivity or ac conductivity. There are two transitions of resistivity for carbon black filling. Below the first transition, resistivity shows an ohmic behavior and its value is almost the same as that of the matrix. Between the first and second transition, the change in resistivity is very sharp, and a non-ohmic electric field dependence of current has been observed. Secondly, the electrical conduction property of the carbon black-filled polyethylene matrix composites below the percolation threshold is discussed with the hopping conduction model. This study investigates the electrical conduction property of the composites below the percolation threshold based on the frequency dependence of conductivity in the range of 20 Hz to 1 MHz. There are two components for the observed ac loss current. One is independent of frequency that becomes prevalent in low frequencies just below the percolation threshold and under a high electrical field. The other is proportional to the frequency of the applied ac voltage in high frequencies and its origin is not clear. These results support the conclusion that the electrical conduction mechanism below the percolation threshold is tunneling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.136-137
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• 2008

태양전지의 효율은 실리콘 자체의 특성에 의해서 결정 되거나 완성된 실리콘을 통해 태양전지를 제조하는 과정에서 Texturing, Coating 등을 통해 효율을 변화 시킬 수 있다. PC1D를 이용해 Texturing, Base Resistivity, Emitter Doping등을 조절해가며 고효율 태양전지를 위한 시뮬레이션을 하였다. Texture Angle이 $80^{\circ}$, Texture Depth가 2um, Base Resistivity가 0.2[${\Omega}{\cdot}cm$], Emitter Doping이 8*Exp(19)[$cm^{-3}$]일 경우 효율이 19.9%로 최적화 되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.48-49
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• 2006

Highly conductive and transparent films of Ga-doped ZnO have been prepared by pulsed laser deposition using a ZnO target with 3 wt% ${Ga_2}{O_3}$ dopant. Films with the resistivity as low as $3.3{\times}10^{-4}{\Omega}cm$ and the transmittance above 80 % at the wavelength of 400 to 800 nm can be fabricated on glass substrate at room temperature. It is shown that a stable resistivity for the use in oxidation ambient at high temperature can be obtained for the films. Heat treatments were performed to examine the thermal stability of ZnO and GZO films at ptemperature range from $100^{\circ}C$ to $400^{\circ}C$ in $O_2$ ambient for 30 minutes. The resistivity of ZnO film annealed at $400^{\circ}C$ increased by two orders of magnitude, in case of GZO film was relatively stable up to at $400^{\circ}C$. For practical applications at high temperatures the thermal stability of resistivity of GZO thin films might become an advantage for transparent electrodes.

• 한국세라믹학회지
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• 제49권1호
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• pp.124-129
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• 2012

An M-shaped SiC gas igniter was fabricated by a reaction sintering followed by nitrogen doping. The igniter showed both resistivity at room temperature and NTC to PTC transition temperature values that were lower than those of commercial igniters. It was deduced that the doped nitrogen reduces the electrical resistivity at room temperature, while, at high temperature, the doped nitrogen and a trace of $Si_3N_4$ phase work as scattering centers against electron transfer, resulting in a lowered NTC-to-PTC transition point (below $650^{\circ}C$). Such characteristics were correlated to the fast heating speed (as compared to the commercial models) and to the prevention of the high temperature overshooting of the nitrogen-doped SiC igniter.