• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.338-341
• /
• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• Journal of the Korean Ceramic Society
• /
• v.43 no.3 s.286
• /
• pp.143-147
• /
• 2006

Co-Fe-Al-O nanogranular thin films were fabricated by RF-magnetron sputtering under an $Ar+O_2$ atmosphere. High resolution transmission electron microscopy revealed that the Co-Fe-Al-O films are composed of bcc (Co, Fe) nanograins finer than 5 nm and an Al-O amorphous phase. A very large electrical resistivity of $374{\mu}{\Omega}cm$ was obtained, together with a large uniaxial anisotropy field of 50 Oe, a hard axis coercivity of 1.25 Oe, and a saturation magnetization of 12.9 kG. The actual part of the relative permeability was measured to be 260 at low frequencies and this value was maintained up to 1.3 GHz. The ferromagnetic resonance frequency was 2.24 GHz. The resulting Co-Fe-Al-O nanogranular thin films with a high electrical resistivity and high resonance frequency are considered to be suitable for GHz magnetic device applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.2
• /
• pp.123-129
• /
• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.58-58
• /
• 2000

Recently low resistance of bus line is required for large screen size RFT-CLD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10$\mu$$\Omega$cm and high resistance of chemical attack is required. In this paper, Al-W thin film were deposited on glass substrates by D.C magnetron sputtering system under various condition for high chemical resistance. Its properties were characterized by SEM, AFM, XRD, 4-point-probe, and cyclic voltammertry. The optimal condition of Al-W was 10$0^{\circ}C$, 100W, 0.4Pa, 23sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-W(3 wt.%) was about 11$\mu$$\Omega$cm. And when wt.% of W in Al-W alloy was higher than about 4%, Al-W alloy thin film has high chemical resistance.

• Journal of Electrical Engineering and Technology
• /
• v.7 no.4
• /
• pp.589-595
• /
• 2012

When surges and electromagnetic pulses from lightning or power conversion devices are considered, it is desirable to evaluate grounding system performance as grounding impedance. In the case of large-sized grounding electrodes or long counterpoises, the grounding impedance is increased with increasing the frequency of injected current. The grounding impedance is increased by the inductance of grounding electrodes. This paper presents the measured results of frequency-dependent grounding impedance and impedance phase as a function of the length of counterpoises. In order to analyze the frequency-dependent grounding impedance of the counterpoises, the frequency-dependent current dissipation rates were measured and simulated by the distributed parameter circuit model reflecting the frequency-dependent relative resistivity and permittivity of soil. As a result, the ground current dissipation rate is proportional to the soil resistivity near the counterpoises in a low frequency. On the other hand, the ground current dissipation near the injection point is increased as the frequency of injected current increases. Since the high frequency ground current cannot reach the far end of long counterpoise, the grounding impedance of long counterpoise approaches that of the short one in the high frequency. The results obtained from this work could be applied in design of grounding systems.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1584-1586
• /
• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• Korean Journal of Materials Research
• /
• v.20 no.10
• /
• pp.555-558
• /
• 2010

This study examined the effect of current density on the surface morphology and physical properties of copper plated on a polyimide (PI) film. The morphology, crystal structure, and electric characteristics of the electrodeposited copper foil were examined by scanning electron microscopy, X-ray diffraction, and a four-point probe, respectively. The surface roughness, crystal growth orientation and resistivity was controlled using current density. Large particles were observed on the surface of the copper layer electroplated onto a current density of 25 mA/$cm^2$. However, a uniform surface and lower resistivity were obtained with a current density of 10 mA/$cm^2$. One of the important properties of FCCL is the flexibility of the copper foil. High flexibility of FCCL was obtained at a low current density rather than a high current density. Moreover, a reasonable current density is 20 mA/$cm^2$ considering the productivity and mechanical properties of copper foil.

• Journal of the Korean Magnetics Society
• /
• v.4 no.1
• /
• pp.44-47
• /
• 1994

High $T_{c}$ superconducting $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$ thin film was grown up for c-axis orientation by epitaxial growth method on $LaAlO_{3}$ single crystal substrate. The crystal structures of this thin film were found to be c-axis orientation by X-ray diffraction patterns. Hall effect and resistivity measurements were made by van der Pauw method. Hall resistivity was calculated from the magnetoresistivity by considering thermomagnetic effect. The relation was $pH=p_{s}tan{\alpha}_{n}-QBT\frac{S_s}{K_s}$ The measured Hall resistivity and the calculated one are in good agreement each other.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.1
• /
• pp.49-55
• /
• 2023

The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10^-4 Ω∙cm, the hole mobility of 51.28 cm²/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.140-144
• /
• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.