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http://dx.doi.org/10.3740/MRSK.2010.20.10.555

Property and Surface Morphology of Copper Foil on the Current Density  

Woo, Tae-Gyu (Division of Advanced Materials Engineering, College of Engineering, Chonbuk National University)
Park, Il-Song (Division of Advanced Materials Engineering, College of Engineering, Chonbuk National University)
Jung, Kwang-Hee (Division of Advanced Materials Engineering, College of Engineering, Chonbuk National University)
Seol, Kyeong-Won (Division of Advanced Materials Engineering, College of Engineering, Chonbuk National University)
Publication Information
Korean Journal of Materials Research / v.20, no.10, 2010 , pp. 555-558 More about this Journal
Abstract
This study examined the effect of current density on the surface morphology and physical properties of copper plated on a polyimide (PI) film. The morphology, crystal structure, and electric characteristics of the electrodeposited copper foil were examined by scanning electron microscopy, X-ray diffraction, and a four-point probe, respectively. The surface roughness, crystal growth orientation and resistivity was controlled using current density. Large particles were observed on the surface of the copper layer electroplated onto a current density of 25 mA/$cm^2$. However, a uniform surface and lower resistivity were obtained with a current density of 10 mA/$cm^2$. One of the important properties of FCCL is the flexibility of the copper foil. High flexibility of FCCL was obtained at a low current density rather than a high current density. Moreover, a reasonable current density is 20 mA/$cm^2$ considering the productivity and mechanical properties of copper foil.
Keywords
current density; peel strength; resistivity; flexibility; plating;
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1 T. G. Chung, Y. H. Kim and J. G. Na, J. Kor. Inst. Met. & Mater., 29(11), 1097 (1991).   과학기술학회마을
2 K. H. Hwang, K. I. Lee, S. K. Joo and T. Kang, J. Kor. Cryst. Growth & Cryst. Tech., 1(2), 80 (1991).
3 S. M. Sze, VLSI Technology, 2nd Ed, p. 373, McGraw Hill, USA (1988).
4 G. F. McGuire, Semiconductor Materials and Process Handbook, p. 587, Noyes Publication, (1988).
5 E. J. Lee and J. S. Kim, Journal of the Institute of Industrial Technology, 6(2), 11 (1998) (ISSN : 1229-1773).
6 J. J. Kim and M. S. Kang, Hwahak Konghak, 39(6), 721 (2001).
7 B. S. Min, W. S. Chung and I, G, Kim, J. Kor. Inst. Met. & Mater., 40(12), 12 (2002).
8 A. Ibanez and E. Fatas, Surf. Coating. Tech., 191, 7 (2005).   DOI   ScienceOn
9 T. X. Liang, Y. Q. Liu, Z. Q. Fu, T. Y. Luo and K. Y. Zhang, Thin Solid Films, 473, 247 (2005).   DOI   ScienceOn
10 Y. J. Song, J. H. Seo, Y. S. Lee and S. K. Rha, Kor. J. Mater. Res., 19(6), 344 (2009) (in Korean).   과학기술학회마을   DOI   ScienceOn
11 H. J. Kang, B. N. Park, S. J. Park and S. Y. Choi, Journal of the Institute of Electronic Technology, 23, 8, (2003) (ISSN : 1225-214X).
12 P. V. Brande and R. Winand, Surf. Coating. Tech., 52, 1 (1992).   DOI   ScienceOn
13 Z. Zhou and T. J. O’Keefe, J. Appl. Electrochem., 28, 461 (1998).   DOI   ScienceOn
14 J. J. Yang, Y. L. Huang and K. W. Xu, Surf. Coating. Tech., 201, 5574 (2007).   DOI   ScienceOn
15 T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Rose, Y. P. Zhao, G. C. Wang, S. M. Rossnagel, and C. Cabral, Mater. Res. Soc. Symp. Proc. 612, D7.1.1 (2000), ed. K. Maex, Y-C. Joo, G.S. Oehrlein, S. Ogawa, J.T. Wetzel (Materials Research Society, San Francisco, April, 2000).   DOI
16 H. S. Lee, H. S. Kim and C. M. Lee, J. Kor. Inst. Met. & Mater., 39(8), 920 (2001).   과학기술학회마을
17 J. W. Choi, T. S. Oh and Y. H. Kim, J. Kor. Inst. Met. & Mater., 35(5), 542 (1997).   과학기술학회마을
18 T. G. Woo, I. S. Park, H. W. Lee, M. H. Lee, E. K. Park, Y. K. Hwang, and K. W. Seol, J. Kor. Inst. Met. & Mater, 45(7), 423 (2007).   과학기술학회마을
19 S. C. Park, K. J Min, K. H. Lee, Y. S. Jeong and Y. B. Park, Kor. J. Mater. Res., 18(9), 486 (2008) (in Korean).   과학기술학회마을   DOI   ScienceOn