• Geophysics and Geophysical Exploration
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• v.7 no.2
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• pp.136-147
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• 2004

In this study, the characteristics of magnetotelluric (MT) responses due to a three-dimensional (3-D) body are analyzed with 3-D numerical modeling. The first model for the analysis consists of a single isolated conductive body embedded in a resistive homogeneous half-space. The second model has an additional conductive overburden while the other conditions remain the same as the first one. The analysis of apparent resistivities shows well that the 3-D effects are dominant over some frequency range for the first model. Two mechanisms, current channeling and induction, for secondary electric fields due to the conductive body are analyzed at various frequencies: at high frequencies induction is more dominant than channeling, while at low frequencies channeling is more dominant than induction. Tippers have a strong relation to the position of anomalous body and the real and imaginary parts of induction vector also indicate the position of anomalous body. off-line conductive anomaly sometimes causes severe problem in 2-D interpretation. In such case, induction vector analysis can give information on the existence and location of the anomalous body. Each parameter of the second model shows similar responses as those of the first model. The only difference is that the magnitude of all parameters is decreased and that the domain showing the 3-D effects becomes narrower. As shown in this study, the analysis of 3-D effects provides a useful and effective means to understand the 3-D subsurface structure and to interpret MT survey data.

• Journal of Radiation Protection and Research
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• v.24 no.2
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• pp.73-86
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• 1999

The ion-exchange method for the purification of primary coolant has been used broadly in PWR(pressurized water reactor)-type nuclear power plants due to its high decontamination efficiency, simple system, and easy operation. However, its non-selective removal of metal and non-radionuclides shortens its life, resulting in the generation of a large amount of waste ion-exchange resin. In this study, the feasibility of electrodeionization (EDI) was investigated for the purification of primary cooling water using synthetic solutions under various experimental conditions as an alternative method for the ion exchange. The results shows that as the feed flow-rate increased, the removal efficiency increased and the power consumption decreased. The removal rate was observed as a 1000 decontamination factor(DF) at a nearly constant level. For the synthetic solution of 3 ppm TDS (Total Dissolved Solid), the power consumption was 40.3 mWh/L at 2.0 L/min of feed flow rate. The higher removal rate of metal species and lower power consumption were obtained with greater resin volume per diluting compartment. However, the flow rate of the EDI process decreased with the elapsed time because of the hydrodynamic resistivity of resin itself and resin fouling by suspended solids. Thus, the ion-exchange resin was replaced by an ion-conducting spacer in order to overcome the drawback. The system equipped with the ion-conducting spacer resolved the problem of the decreasing flow rate but showed a lower efficiency in terms of the power consumption, the removal rate of metal species and current efficiency. In the repeated batch operation, it was found that the removal efficiency of metal species was stably maintained at DF 1000.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.73-79
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• 2008

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.542-549
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• 2020

Effects of Sc addition on microstructure, electrical conductivity, thermal conductivity and mechanical properties of the as-cast and as-extruded Al-2Zn-1Cu-0.3Mg-xSc (x = 0, 0.25, 0.5 wt%) alloys are investigated. The average grain size of the as-cast Al-2Zn-1Cu-0.3Mg alloy is 2,334 ㎛; however, this value drops to 914 and 529 ㎛ with addition of Sc element at 0.25 wt% and 0.5 wt%, respectively. This grain refinement is due to primary Al₃Sc phase forming during solidification. The as-extruded Al-2Zn-1Cu-0.3Mg alloy has a recrystallization structure consisting of almost equiaxed grains. However, the as-extruded Sc-containing alloys consist of grains that are extremely elongated in the extrusion direction. In addition, it is found that the proportion of low-angle grain boundaries below 15 degree is dominant. This is because the addition of Sc results in the formation of coherent and nano-scale Al₃Sc phases during hot extrusion, inhibiting the process of recrystallization and improving the strength by pinning of dislocations and the formation of subgrain boundaries. The maximum values of the yield and tensile strength are 126 MPa and 215 MPa for the as-extruded Al-2Zn-1Cu-0.3Mg-0.25Sc alloy, respectively. The increase in strength is probably due to the existence of nano-scale Al₃Sc precipitates and dense Al₂Cu phases. Thermal conductivity of the as-cast Al-2Zn-1Cu-0.3Mg-xSc alloy is reduced to 204, 187 and 183 W/MK by additions of elemental Sc of 0, 0.25 and 0.5 wt%, respectively. On the other hand, the thermal conductivity of the as-extruded Al-2Zn-1Cu-0.3Mg-xSc alloy is about 200 W/Mk regardless of the content of Sc. This is because of the formation of coherent Al₃Sc phase, which decreases Sc content and causes extremely high electrical resistivity.

• Polymer(Korea)
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• v.28 no.2
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• pp.143-148
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• 2004

${\alpha}$,$\omega$-Hydrogen polyorganosiloxane(HPMDMS) prepolymer was prepared from equilibrium polymerization ofoctamethylcyclotetrasiloxane, 1,3,5-trimethylcyclotrisiloxane, 1,3,5,7-tetravinyl-1,3,5,7-tetramethyl-cyclotetrasiloxane, and 1,1,3,3-tetramethyl disiloxane as an end-blocker in the presence of tetramethylammonium siloxanolate as a catalyst. Polyorganosiloxane modified with dimethylacrylamide(APMDMS) was prepared by hydrosilylation of HPMDMS with dimethylacrylamide in the presence of Pt catalyst, and followed by coordination of metal oxide (APMDMS-MO), such as NiO and FeO, to the amide moieties of the resulting polymer. The chemical structures of HPMDMS and APMDMS were confirmed by FT-IR and $^1$H-NMR analysis. Liquid silicone rubber containing metal oxide composite (LSRMO) was prepared by compounding APMDMS-MO, ${\alpha}$,$\omega$-vinylpolydimethylsiloxane, and a catalyst in a high speed dissolver. The thermal conductivity of LSRMO composite was determined to be 0.29 W/mK, and the volume resistivity exhibited a lower value than that of LSR composite. The mechanical and thermal properties of LSRMO and LSR composite were measured by UTM and TGA.

• Journal of the Korean Geosynthetics Society
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• v.13 no.3
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• pp.1-10
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• 2014

Several types of methods such as resistivity survey, ground penetration radar, etc are used for detection of levee leakage and according to the river design guidelines detection of levee leakage is performed by measuring the hydraulic conductivity of levee soil. But, the former can not verify the leakage point and degree of saturation, the latter is an after treatment method. Movable sensor, which is a high-tech TDR system developed since 2000, can obtain directly the dielectric constant profile covering the whole depth of levee. In this study, laboratory and field model experiments were carried out using movable TDR sensor in order to evaluate the applicability as detection system of levee leakage, As the result, movable TDR system has proven to be 3 times more sensitive to water contents than dry unit weight, and the results conclude that the dielectric constant, water contents and density of the ground proved to have a correlation among them, and the dielectric constant is expected to be a basic data on detection of levee leakage.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.128-133
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• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.