• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1638-1642
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• 2007

This paper investigated the destruction effect of the semiconductors by impact of high power electromagnetic wave. The experiments is employed as an open-ended waveguide to study the destruction effects on semiconductor using a 2.45 GHz 600 W Magnetron as a high power electromagnetic wave. The semiconductors are located at a distance of $31cm\sim40cm$ from the open-ended waveguide and are composed of a LED drive circuit for visual discernment. Also the chip condition of semiconductor is observed by SEM(Scanning Electron Microscope) analysis. The semiconductor are damaged by high power electromagnetic wave at about 860 V/m. The SEM analysis of the destructed devices showed onchipwire and bondwire destructions. Based on the result, semiconductor devices should have plan to protect the semiconductor devices form high power electromagnetic wave. And the database from this experiment provides the basis for future investigation.

• The Magazine of the IEIE
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• v.35 no.7
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• pp.57-71
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• 2008

The last decade has witnessed great improvements in power semiconductor devices thanks to the advanced design and process, which have made it possible to significantly improve the electrical performances of electronic systems while simultaneously reducing their site, weight and perhaps most importantly reducing their cost. Among the power semiconductor devices, IGBT will be a key semiconductor component for power industry since it has a huge potential to cover large areas of power electronics from small home appliances to heavy industries. Currently, only a few limited power semiconductor manufacturers supply most of the industrial consumptions of power IGBT and its modules. Therefore, a large portion of technology in the power industry is dependent on other advanced countries. In this regard, to independently build power IGBT devices and the relevant power module technology, Korean government initiated a new 5-year project 'Power IT,' which also aimed at booming the business of the power semiconductor and the allied industries. With the success of this power IT project, it is expected that the power semiconductor technology will be a basis to foster the high power semiconductor industry and moreover, there will be more innovative developments in the Korea region and globally Also, forming the channel between the customers and suppliers, it is possible to effectively develop the customized power products, which could strengthen the competitiveness of Korean power industry. Furthermore, the power industry including semiconductor manufacturers will be technologically self-supporting and be able to obtain good business opportunities, and eventually increase the share in the growing power semiconductor market, which could be positioned as a major industry in Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.397-398
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• 2013

Fairchild Green Mode off line buck switch for low standby power consumption and high reliability is presented. By reducing operating current and optimizing switching frequency, 20mW power consumption is achieved. High performance trans-conductance amplifier and green mode function improve the ripple and regulation in the output voltage. The conventional $FPS^{TM}$ buck and novel Fairchild buck switch are compared to show the improvement of performance. Experimental results are showed using 2W evaluation board.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.13-18
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• 2004

전력계통 분야에서는 HVDC 전력변환소, BTB, UPFC 및 SVC의 안정성 향상 및 안정적인 운용을 위한 체계적인 유지보수 및 관리가 필요하다. 특히 전력계통에 접속된 대용량 전력반도체 소자인 사이리스터 밸브는 운전중에 열적, 전기적인 스트레스를 받게 되며, 이로 인해 밸브의 수명이 감소하여 전력계통의 안정적인 운용을 어렵게 만드는 요인이 된다. 따라서 전력계통 운용의 안정성을 확보하기 위해서는 대용량 사이리스터 밸브의 열적, 전기적 스트레스에 따른 수명 변화를 예측하는 열화진단 기법의 개발이 중요하다. 본 고에서는 대용량 사이리스터 소자의 열화진단 기법에 대한 국내외 현황과 현재 연구가 진행중인 열화 진단 기법에 대해 서술하였으며, 1500V급 사이리스터 소자의 가속열화 실험을 통해 소자의 수명을 예측한 결과를 나타내었다.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.367-368
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• 2014

This paper investigates characteristics of high power semiconductor device losses in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor device of press-pack type IGCT of 6.5kV is considered in this paper. Analysis is performed based on neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 4160V. This paper describes total loss distribution at worst case under inverter and rectifier operating mode for the power semiconductor switches. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt snubber and ac input filter are presented. The investigation result shows that IGCT type semiconductor devices generate the total efficiency of 97.74% under the rated condition.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.487-488
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• 2015

New inverter motor drive systems consume 30%~50% less energy compared to existing motor drive systems. For inverter motor drive systems, the development of a 1200V high side driver is critical. This paper presents an advanced 1200V high side driver with low power consumption and high ruggedness. This solution implements a high voltage level shifter which consumes low power by adding a clamped VGS LDMOS driver to the conventional short pulse generator. Moreover, this paper proposes a highly rugged 1200V LDMOS which improves SOA by limiting the hole current. This paper could be applied to smart power modules used for HVAC (heating, ventilation, and airconditioning) and industrial inverters. Consequently, this paper will provide design engineers with an understanding of how they can make a significant contribution to worldwide energy savings.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.386-387
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• 2013

This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGBT module type, IGBT press-pack type, and IGCT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral-point clamed 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that IGBT press-pack type semiconductor device has the highest efficiency and IGCT has the lowest cost factor considering the necessary auxiliary components.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1380-1391
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• 2015

This paper provides a loss analysis and comparison of high power semiconductor devices in 5MW Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) Wind Turbine Systems (WTSs). High power semiconductor devices of the press-pack type IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on the back-to-back type 3-level Neutral Point Clamped Voltage Source Converters (3L-NPC VSCs) supplied from a grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through a loss analysis considering both the conduction and switching losses under the operating conditions of 5MW PMSG wind turbines, particularly for application in offshore wind farms. This paper investigates the loss analysis and thermal performance of 5MW 3L-NPC wind power inverters under the operating conditions of various power factors. The loss analysis and thermal analysis are confirmed through PLECS Blockset simulations with Matlab Simulink. The comparison results show that the press-pack type IGCT has the highest efficiency including the snubber loss factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.3-6
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• 2004

Power semiconductor devices are being compact, high performance and intelligent thanks to recent remarkable developments of silicon design, process and related packaging technologies. Developments of MOS-gate transistors such as MOSFET and IGBT are dominant thanks to their advantages on high speed operation. In conjunction with package technology, silicon technologies such as trench, charge balance and NPT will support future power semiconductors. In addition, wide band gap material such as SiC and GaN are being studies for next generation power semiconductor devices.