• 제목/요약/키워드: High Power RF Filter

검색결과 54건 처리시간 0.025초

고 전력 RF-Filter의 수동혼변조 저감방안에 대한 연구 (Study on Passive Intermodulation Reduction for High Power RF-Filter)

  • 박종철;이강훈;이영철
    • 한국전자통신학회논문지
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    • 제3권4호
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    • pp.282-288
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    • 2008
  • 본 연구에서는 고출력 RF 필터의 도금상태에 따른 수동혼변조왜곡(PIMD)을 측정하였으며 RF-filter의 PIMD를 저감시키기 위한 방안을 제시하였다. PIMD의 표준측정방안에 따라 Wibro 중계기용 고출력 RF-필터의 PIMD 특성를 측정하였다. Wibro용 고 전력-RF 필터의 설계에서 통과대역의 에지(edge)에서 삽입손실 및 지연 특성의 평탄도가 저하될 경우, PIMD의 발생되므로 본 연구에서는 고 전력 필터의 PIM을 감소시키기 위하여 필터의 내부 도금 재료의 종류와 방안을 제시하였다.

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Al-Cu 합금 전극막 구조를 갖는 사다리형 SAW filter의 RF-고전력 내구성 특성 고찰 (A Study on RF High Power Durability of Al-Cu Alloy Electrodes Used in Ladder-type SAW(surface acoustic wave) Filters)

  • 김남철;이기선;서수정;김지수;김윤동
    • 한국전기전자재료학회논문지
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    • 제14권5호
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    • pp.435-443
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    • 2001
  • As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

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2.5 GHZ SECOND-AND FOURTH-ORDER INDUCTORLESS RF BANDPASS FILTERS

  • Thanachayanont, Apinunt
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.86-89
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    • 2002
  • A new design approach for realising low-power low-voltage high-Q high-order RE bandpass filter is proposed. Based on the gyrator-C inductor topology, a 2$\^$nd/-order biquadratic bandpass filter can be realised by adding a series capacitor to the input port of the gyrator. High-Q 2$\^$nd/-order and 4$\^$th/-order fully differential RF bandpass filters operating in the 2.4-㎓ ISM (Industrial, scientific and medical) frequency band under a 2-V single power supply voltage with low power dissipation are reported.

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부분방전 모니터링 시스템을 위한 광대역 RF 소자설계 연구 (Design of Broad Band RF Components for Partial Discharge Monitoring System)

  • 이제광;고재형;김군태;김형석
    • 전기학회논문지
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    • 제60권12호
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    • pp.2286-2292
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    • 2011
  • In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

Unscented Kalman Filter를 이용한 원격 RF 센서 시스템 구현 (Implementation of Passive Telemetry RF Sensor System Using Unscented Kalman Filter Algorithm)

  • 김경엽;이준탁
    • 전기학회논문지
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    • 제57권10호
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    • pp.1861-1868
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    • 2008
  • In this paper, Passive Telemerty RF Sensor System using Unscented Kalman Filter algorithm(UKF) is proposed. General Passive Telemerty RF Sensor System means that it should be "wireless", "implantable" and "batterless". Conventional Passive Telemerty RF Sensor System adopts Integrated Circuit type, but there are defects like complexity of structure and limit of large power consumption in some cases. In order to overcome these kinds of faults, Passive Telemetry RF Sensor System based on inductive coupling principle is proposed in this paper. Because passive components R, L, C have stray parameters in the range of high frequency such as about 200[KHz] used in this paper, Passive Telemetry RF Sensor System considering stray parameters has to be derived for accurate model identification. Proposed Passive Telemetry RF Sensor System is simple because it consists of R, L and C and measures the change of environment like pressure and humidity in the type of capacitive value. This system adopted UKF algorithm for estimation of this capacitive parameter included in nonlinear system like Passive Telemetry RF Sensor System. For the purpose of obtaining learning data pairs for UKF Algorithm, Phase Difference Detector and Amplitude Detector are proposed respectively which make it possible to get amplitude and phase between input and output voltage. Finally, it is verified that capacitive parameter of proposed Passive Telemetry RF Sensor System using UKF algorithm can be estimated in noisy environment efficiently.

RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q.;Yu, A.B.;Karim, M.F.;Tang, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권3호
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    • pp.166-176
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    • 2007
  • Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

RF 고전력 스트레스에 의한 SAW Device의 고장메카니즘 분석 (Failure Mechanism Analysis of SAW Device under RF High Power Stress)

  • 김영구;김태홍
    • 한국인터넷방송통신학회논문지
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    • 제14권5호
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    • pp.215-221
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    • 2014
  • 본 논문에서는 RF 고전력 스트레스에 의한 SAW 디바이스의 신뢰성 분석을 위하여 향상된 내전력 시험시스템 및 시험방법을 제안하고 고장분석을 통해 고장메카니즘을 분석하였다. 광학현미경, SEM(Scanning Electron Microscope) 및 EDX(Energy Dispersive X-ray Spectro-scopy)장비를 이용하여 고장 분석한 결과, SAW 디바이스의 고장메카니즘은 고전류 밀도 및 고온 조건에서 줄열에 의한 Electromigration으로 분석하였다. Electromigration은 IDT전극에 void와 hillock을 생성하고, 그 결과로 전극이 단락과 단선되어 삽입손실이 증가하는 것이다. 제안된 내전력 시험시스템과 방법을 이용하여 450MHz CDMA용 SAW 필터의 가속수명시험을 수행하고, 아이링 모델과 와이블 분포를 이용하여 SAW 필터의 $B_{10}$수명은 98,500시간으로 추정하였다.

A Highly Efficient Rectenna Using Harmonic Rejection Capability

  • Kim, Youg-Hwan;Lim, Sung-Joon
    • Journal of electromagnetic engineering and science
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    • 제11권4호
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    • pp.257-261
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    • 2011
  • A highly efficient 2.4 GHz rectenna is designed using a harmonic rejection bandpass filter. The rectenna is printed on Rogers Duroid 5880 substrate with ${\varepsilon}_r$=2.2 and a thickness of 1.6 mm. The rectenna consists of a microstrip antenna and high order harmonic rejection bandpass filter, microstrip lowpass filter, and Schottky barrier diode (HSMS2820). The use of a $2^{nd}$ and $3^{rd}$ harmonic rejection microstrip bandpass filter in the rectenna results in high conversion efficiency. The proposed rectenna achieves a RF to DC conversion efficiency of 72.17 % when the received RF power is 63.09 mW.

A Discrete-Amplitude Pulse Width Modulation for a High-Efficiency Linear Power Amplifier

  • Jeon, Young-Sang;Nam, Sang-Wook
    • ETRI Journal
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    • 제33권5호
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    • pp.679-688
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    • 2011
  • A new discrete-amplitude pulse width modulation (DAPWM) scheme for a high-efficiency linear power amplifier is proposed. A radio frequency (RF) input signal is divided into an envelope and a phase modulated carrier. The low-frequency envelope is modulated so that it can be represented by a pulse whose area is proportional to its amplitude. The modulated pulse has at least two different pulse amplitude levels in order that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing the modulated envelope with the phase modulated carrier. The RF pulse train is amplified by a switching-mode power amplifier, and the original RF input signal is restored by a band pass filter. Because duty ratios of the RF pulse train are kept large in spite of a small input envelope, the DAPWM technique can reduce loss from harmonic components. Furthermore, it reduces filtering efforts required to suppress harmonic components. Simulations show that the overall efficiency of the pulsed power amplifier with DAPWM is about 60.3% for a mobile WiMax signal. This is approximately a 73% increase compared to a pulsed power amplifier with PWM.

ZigBee 응용을 위한 900MHz CMOS RF 송.수신기 구현 (Implementation of a CMOS RF Transceiver for 900MHz ZigBee Applications)

  • 권재관;박강엽;최우영;오원석
    • 대한전자공학회논문지TC
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    • 제43권11호
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    • pp.175-184
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    • 2006
  • 본 논문은 ZigBee 응용을 위한 900MHz ISM 밴드용 RF 송 수신기 설계에 관한 기술이다. 수신단은 저잡음 증폭기, 하향믹서, 프로그래머블 이득증폭기, 밴드패스필터로 구성되며, 송신단은 밴드패스필터, 프로그래머블 이득증폭기, 상향믹서, 구동증폭기로 구성된다. 송 수신단은 Low-IF 구조를 사용하였다. 또한, 송 수신단을 구성하는 각각의 블록은 저전력 기술을 사용하여 전체적인 전류 소모를 줄였다. Post-레이아웃 시뮬레이션으로 전체 송 수신기의 성능을 검증하였으며, 0.18um RF CMOS 공정을 이용하여 칩으로 구현하였다. 측정결과 제작된 칩셋은 -92dBm의 최소 수신 입력 레벨을 갖으며, 0dBm의 선형적인 최대 송신 출력 레벨을 갖는다. 또한, 전력 소모는 32mW(@1.8VDD)이며, ESD 방지 다이오드 패드를 포함한 칩 면적은 $2.3mm{\times}2.5mm$이다.