• Title/Summary/Keyword: High Power RF Filter

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Study on Passive Intermodulation Reduction for High Power RF-Filter (고 전력 RF-Filter의 수동혼변조 저감방안에 대한 연구)

  • Park, Chong-Chul;Lee, Kang-Hoon;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.3 no.4
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    • pp.282-288
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    • 2008
  • In this paper, the Passive Intermodulation Distortion(PIMD) of high power RF Filter is measured with filter inner coating materials and we suggest how to reduced the PIMD of RF filter coating methods. According to the standard measurement regulation by IEC, the Passive Intermodulation Distortion of Wibro relay high power filter are measured. We suggest the coating materials and coating methods of high power filter inner structure to reduce the PIMD generating by insert loss and worse flatness of filter delay in the design of Wibro high power filter efficiently.

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A Study on RF High Power Durability of Al-Cu Alloy Electrodes Used in Ladder-type SAW(surface acoustic wave) Filters (Al-Cu 합금 전극막 구조를 갖는 사다리형 SAW filter의 RF-고전력 내구성 특성 고찰)

  • 김남철;이기선;서수정;김지수;김윤동
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.5
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    • pp.435-443
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    • 2001
  • As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

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2.5 GHZ SECOND-AND FOURTH-ORDER INDUCTORLESS RF BANDPASS FILTERS

  • Thanachayanont, Apinunt
    • Proceedings of the IEEK Conference
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    • 2002.07a
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    • pp.86-89
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    • 2002
  • A new design approach for realising low-power low-voltage high-Q high-order RE bandpass filter is proposed. Based on the gyrator-C inductor topology, a 2$\^$nd/-order biquadratic bandpass filter can be realised by adding a series capacitor to the input port of the gyrator. High-Q 2$\^$nd/-order and 4$\^$th/-order fully differential RF bandpass filters operating in the 2.4-㎓ ISM (Industrial, scientific and medical) frequency band under a 2-V single power supply voltage with low power dissipation are reported.

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Design of Broad Band RF Components for Partial Discharge Monitoring System (부분방전 모니터링 시스템을 위한 광대역 RF 소자설계 연구)

  • Lee, Je-Kwang;Ko, Jae-Hyeong;Kim, Koon-Tae;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2286-2292
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    • 2011
  • In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

Implementation of Passive Telemetry RF Sensor System Using Unscented Kalman Filter Algorithm (Unscented Kalman Filter를 이용한 원격 RF 센서 시스템 구현)

  • Kim, Kyung-Yup;Lee, John-Tark
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.10
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    • pp.1861-1868
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    • 2008
  • In this paper, Passive Telemerty RF Sensor System using Unscented Kalman Filter algorithm(UKF) is proposed. General Passive Telemerty RF Sensor System means that it should be "wireless", "implantable" and "batterless". Conventional Passive Telemerty RF Sensor System adopts Integrated Circuit type, but there are defects like complexity of structure and limit of large power consumption in some cases. In order to overcome these kinds of faults, Passive Telemetry RF Sensor System based on inductive coupling principle is proposed in this paper. Because passive components R, L, C have stray parameters in the range of high frequency such as about 200[KHz] used in this paper, Passive Telemetry RF Sensor System considering stray parameters has to be derived for accurate model identification. Proposed Passive Telemetry RF Sensor System is simple because it consists of R, L and C and measures the change of environment like pressure and humidity in the type of capacitive value. This system adopted UKF algorithm for estimation of this capacitive parameter included in nonlinear system like Passive Telemetry RF Sensor System. For the purpose of obtaining learning data pairs for UKF Algorithm, Phase Difference Detector and Amplitude Detector are proposed respectively which make it possible to get amplitude and phase between input and output voltage. Finally, it is verified that capacitive parameter of proposed Passive Telemetry RF Sensor System using UKF algorithm can be estimated in noisy environment efficiently.

RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q.;Yu, A.B.;Karim, M.F.;Tang, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.166-176
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    • 2007
  • Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

Failure Mechanism Analysis of SAW Device under RF High Power Stress (RF 고전력 스트레스에 의한 SAW Device의 고장메카니즘 분석)

  • Kim, Young-Goo;Kim, Tae-Hong
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.14 no.5
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    • pp.215-221
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    • 2014
  • In this paper, the improved power durability test system and method for an reliability analysis of SAW device is proposed and the failure mechanism through failure analysis is analyzed. As a result of the failure analysis using microscope, SEM and EDX, the failure mechanism of the SAW device is electromigration due to joule heating under high current density and high temperature condition. The electromigration makes voids and hillocks in the IDT electrode and the voids and hillocks can lead to short circuit and open circuit faults, respectively, increasing the insertion loss of an SAW filter. The accelerated life testing of the SAW filter for 450MHz CDMA application using the proposed power durability test system and method is carried out. $B_{10}$ lifetime of the SAW filter using Eyring model and Weibull distribution is estimated as about 98,500 hours.

A Highly Efficient Rectenna Using Harmonic Rejection Capability

  • Kim, Youg-Hwan;Lim, Sung-Joon
    • Journal of electromagnetic engineering and science
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    • v.11 no.4
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    • pp.257-261
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    • 2011
  • A highly efficient 2.4 GHz rectenna is designed using a harmonic rejection bandpass filter. The rectenna is printed on Rogers Duroid 5880 substrate with ${\varepsilon}_r$=2.2 and a thickness of 1.6 mm. The rectenna consists of a microstrip antenna and high order harmonic rejection bandpass filter, microstrip lowpass filter, and Schottky barrier diode (HSMS2820). The use of a $2^{nd}$ and $3^{rd}$ harmonic rejection microstrip bandpass filter in the rectenna results in high conversion efficiency. The proposed rectenna achieves a RF to DC conversion efficiency of 72.17 % when the received RF power is 63.09 mW.

A Discrete-Amplitude Pulse Width Modulation for a High-Efficiency Linear Power Amplifier

  • Jeon, Young-Sang;Nam, Sang-Wook
    • ETRI Journal
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    • v.33 no.5
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    • pp.679-688
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    • 2011
  • A new discrete-amplitude pulse width modulation (DAPWM) scheme for a high-efficiency linear power amplifier is proposed. A radio frequency (RF) input signal is divided into an envelope and a phase modulated carrier. The low-frequency envelope is modulated so that it can be represented by a pulse whose area is proportional to its amplitude. The modulated pulse has at least two different pulse amplitude levels in order that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing the modulated envelope with the phase modulated carrier. The RF pulse train is amplified by a switching-mode power amplifier, and the original RF input signal is restored by a band pass filter. Because duty ratios of the RF pulse train are kept large in spite of a small input envelope, the DAPWM technique can reduce loss from harmonic components. Furthermore, it reduces filtering efforts required to suppress harmonic components. Simulations show that the overall efficiency of the pulsed power amplifier with DAPWM is about 60.3% for a mobile WiMax signal. This is approximately a 73% increase compared to a pulsed power amplifier with PWM.

Implementation of a CMOS RF Transceiver for 900MHz ZigBee Applications (ZigBee 응용을 위한 900MHz CMOS RF 송.수신기 구현)

  • Kwon, J.K.;Park, K.Y.;Choi, Woo-Young;Oh, W.S.
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.11 s.353
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    • pp.175-184
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    • 2006
  • In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.