• Smart Media Journal
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• v.4 no.2
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• pp.55-61
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• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

• Journal of the Korea Computer Industry Society
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• v.2 no.4
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• pp.565-572
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• 2001

At the most recent years, laser medical instruments, laser applications and laser nuclear fusion need strong visible light and ultraviolet rays. Nonlinear optical devices, such as harmonic generators and parametric oscillators, provide a means of extending the frequency range of available laser sources. Frequency conversion is a useful technique for extending the utility of high-power lasers. It utilizes the nonlinear optical response of an optical medium in intense radiation fields to generate new frequencies. These progresses have been used to generate high-power radiation in all spectral regions, from the ultraviolet to the far infrared. Optical parametric oscillators and amplifiers generate two waves of lower frequency They are capable of generating a range of wavelengths from a single frequency source, in some cases spanning the entire visible and near infrared regions. Consequently, in order to obtain the green light, the pulsed Nd:YAG laser using multiple-mesh PFN(Pulsed Forming Network) method with Nonlinear optical device was adopted. We compared the current pulseshapes with the laser output energy, and conversion efficiency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.705-711
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• 2003

In this Paper, 2${\times}$100 $\mu\textrm{m}$ AlCaN/GaN HEMT's(on sapphire substrate) large signal model including thermal effect was extracted. An equation based empirical model was employed to make large signal model for convergence and high speed. Pulsed I-V measurement was performed to extract thermal resistance and capacitance. Power amplifiers with 9 mm and 15 mm AlCaN/GaN HEMTS were designed using scaled modeling results of 2${\times}$100 $\mu\textrm{m}$ device respectively. From comparisons between measured and simulated data, the model considering of thermal effects gave better agreement than without one. It demonstrates that thermal modeling must be performed for power amplifier that uses large size transistors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.8
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• pp.740-747
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• 2015

Recently, mobile communication systems using the millimeter-wave frequency band have been proposed, and the importance of efficient compensation of the nonlinearity caused by 60 GHz high-power amplifiers(HPAs) is increasing. In this paper, we propose a predistorter structure based on multiple coefficient sets which are separately used to different ranges of input power values. These ranges correspond to varying levels of nonlinearity characteristics. The structure is applied to the 60 GHz HPA FMM5715X and the performance of correcting the nonlinearity of LTE signals is evaluated. Evaluation results using a hardware testbed demonstrate that the proposed predistorter structure achieves the maximum of 6 dB gain over the conventional method in terms of the adjacent channel leakage ratio(ACLR).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.7
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• pp.1044-1052
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• 1999

A 2-stage 1 watt MMIC(Monolithic Microwave Integrated Circuits) HPA(High Power Amplifiers) at 20 GHz band has been designed and fabricated. The $0.15\mu\textrm{m}$ with the width of $400\mu\textrm{m}$for single device pHEMT technology was used for the fabrication of this MMIC HPA. Due to the series feedback technique from source to ground, bias circuits and stabilization circuits on the main microstrip line, the stability factors(Ks) are more than one at full frequency. The independent operation for each stage and excellent S11, S22 less than -20 dB have been obtained by using lange couplers. For beginning the easy design, linear S-parameters have been extracted from the nonlinear equivalent circuit in foundry library, and equivalent circuits of devices at in/output ports were calculated from this S-parameters. The measured performances, which are in well agreement with the predicted ones, showed the MMIC HPA in this paper has the minimum 15 dB of linear gain, -20 dB of reflection coefficients and 31 dBm of output power over 17~25 GHz.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.4
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• pp.415-424
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• 2004

Cooling the electronic equipment is one of the major focal points of the design process and the key to successful product launch. The two-phase loop thermosyphone which is a good candidate among many available options was investigated fur cooling of the high power amplifiers. The system is composed of evaporator which contains 6 parallel cold plates, fan cooled condenser, gas-liquid separator, and interconnecting tubes. Experiments were performed for several refrigerant charging values, hs and as a experiment result, the optimum charging value fur this system was proposed. In order to optimize the system design, the operating cycle pressure and inlet/outlet temperatures of evaporator and condenser are measured and analyzed. The effect of the three parameters such as flow rate and temperature of condenser cooling air, and thermal load on the evaporator are investigated. The lower the operating pressure and the cycle temperatures are also better to prevent the leakage of the system. The system invesigated in this paper can be directly used for cooling of a real unmanned wireless communication station.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.5 no.2
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• pp.67-78
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• 1994

1996년부터 유럽연합을 중심으로 전자파내성(Electromagnetic immunity; 흔히 군사규격에서는 전자파감응성(electromagnetic susceptibility)이라 함) 규제가 본격적으로 시작될 전망이다. 이러한 전자 파내성 규제는 우리가 과거 '80년대 초에 경험했던 전자파방출(electromagnetic emission; 흔히 electro- magnetic interference 라고도 표현한다) 규제에 비해 규제주파수가 대폭 확장됨(9KHz - 1GHz .rarw. 50/60 Hz - 40 GHz)은 물론, 규제항목도 크게 늘어나기(2개 항목 .rarw. 11개 항목)때문에 본격 규제가 시작되면 우리 산업체에 큰 피해를 초래할 것으로 우려된다. 특히 "복사 전자기장에 대한 전자파내성 요구사항"은 일부 전자파내성 측정항목을 포함하고 있던 안전규 격 등에서도 다루고 있지 않던 것으로서 우리에게는 매우 생소한 항목이다. 이 항목은 과거 미국의 군사 규격등에서 요구했던 항목인데, 앞으로 각국의 상용규격에도 대폭 추가될 것으로 보인다. 이러한 규제는 우리의 생활환경에서 결코 빼놓고 생각할 수 없는, 동시에 가장 큰 전자파장해원인 의도적 복사로서의 방 송신호 및 각종 무선통신 신호에 대해 전기, 전자기기가 전자파내성을 갖고, 성능저하나 오동작을 유발하 지 않아야 함을 요구하는 것이다. 이러한 항목의 평가를 위해서는 대형 시험환경(EMS chamber)과 표준 전자기장 발생장치(signal genera- tors + high power amplifiers), 그리고 오동작 모니터링 장치(monitorring equipments) 등이 필요하기 때 문에 평가시스템 구성에 막대한 비용이 소요된다. 따라서 시스템 구성에 매우 신중을 기해야 하며, 관련 국제표준화규격을 사전에 철저히 이해하여 관련 시험검사를 위한 투자계획을 수립하는 것이 바람직하다. 본 고에서는 복사 전자기장에 대한 대표적인 국제표준화규격을 소개하고, 나아가서 그러한 항목의 평가 시스템의 설계 및 구현에 대해서 설명할 것이다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3215-3226
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• 1996

In this paper a K-band harmonic oscillator competitive to ordinary Push-Push type oscillators is introduced. This oscillator is composed of two-X-band dielectric resonance circuits. To favor its harmonic generation, the load effect and the bias effect are studied to allow the maximum harmonic distortion. As results, the dielectric resonated load and the class A bias are used for the 2nd harmonic generation. analytical study for modelling of voltage controlled dielectric resonator is carried out with theoretical background. The performance of the circuit is evaluated by simulation using harmonic balanced method. The novel structure has ont only a voltage tuning circuit but also an output port at fundamental frequency as the function of prescaler for phase lockede loop application on the just single oscillation structure. In experimentation, the output freqneyc of the 2nd harmonic signal is 20.5GHz and the maximum power level of output is +5.5dBm without additional post amplifiers. the harmonic oscillator exhibits -30dBc of high fundamental frequency rejection without added extra filters. The phase noise of -90dBc/Hz at 100kHz off-carrier has been achieved under free running condition, that satisfies phase noise requirement of IESS 308. The proposed oscillator may be utilized as the clean and stable fixed local oscillator in Transmit Block Upconvertor(TBU) or Low oise Block downconvertor(LNB) for K/Ka-band digital communications and satellite broadcastings.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.96-97
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• 2000

Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)