• Nuclear Engineering and Technology
• /
• v.49 no.4
• /
• pp.792-800
• /
• 2017

The essential requirement of a material to be used for engineering purposes at nuclear establishments is its ability to attenuate the most penetrating ionizing radiations, gamma $({\gamma})-rays$. Mostly, high-Z materials such as heavy concrete, lead, mercury, and their mixtures or alloys have been used in the construction of nuclear establishments and thus termed as nuclear engineering materials (NEM). The NEM are classified into two categories, namely opaque and transparent, depending on their behavior towards the visible spectrum of EM waves. The majority of NEM are opaque. By contrast, various types of glass, which are transparent to visible light, are necessary at certain places in the nuclear establishments. In the present study, ${\gamma}-ray$ shielding behaviors (GSB) of six glass samples (transparent NEM) were evaluated and compared with some opaque NEM in a wide range of energy (15 keV-15 MeV) and optical thickness (OT). The study was performed by computing various ${\gamma}-ray$ shielding parameters (GSP) such as the mass attenuation coefficient, equivalent atomic number, and buildup factor. A self-designed and validated computer-program, the buildup factor-tool, was used for various computations. It has been established that some glass samples show good GSB, thus can safely be used in the construction of nuclear establishments in conjunction with the opaque NEM as well.

• Nuclear Engineering and Technology
• /
• v.55 no.8
• /
• pp.2919-2926
• /
• 2023

In this paper, rare earth element (REE)/polyester composites were designed with lanthanum oxide, gadolinium oxide, and lutetium oxide as ray shielding agents, and polyethylene terephthalate (PET) as the base. Monte Carlo simulation was carried out using FLUKA software. We found that the radiation protection performance of the composite is affected by the type and amount of REE; a higher amount of REE equated to a better radiation protection performance of the composite. When the thickness of the composite and total thickness of the REE is constant, the number of superimposed layers inside the composite does not affect its shielding performance. Compared with a single-type REE/PET composite, a mixed-type REE/PET composite has a wider range of γ-ray absorption and better radiation protection performance. When the mass ratio of PET to REE is 2:8 and different types of REE are mixed with equal mass, several 0.2 cm-thick mixed-type REE/PET composites can shield >70% of 60 and 80 KeV γ-rays.

• Proceedings of the Korean Society of Medical Physics Conference
• /
• 2004.11a
• /
• pp.153-156
• /
• 2004

Korea Food and Drug Administration(KFDA) has peformed the calibration of therapy level dosimeters for Co-60 radiation since 1979. The reference standard ionization chamber has been calibrated at BIPM in France. The uncertainty on the KFDA calibration coefficients is 0.9 %(k=2) for air kerma and absorbed dose to water. Since 1999 a national quality audit program for ensuring dosimetry accuracy in Korea radiotherapy centers has been performed by the KFDA. The uncertainty associated with the determination of the absorbed dose to water from the TLD readings for high energy x-ray is 1.6 %(k=1). The correction factors for energy, non-linearity dose response, and TLD holder are used in the dose determination. Agreement between the user stated dose and KFDA measured dose within ${\pm}$ 5 % is considered acceptable. KFDA TLD postal dose quality audit program was peformed for 71 beam qualities of 53 domestic radiotherapy centers in 2003. The results for quality assurance showed that 63 out of 71 beam qualifies (89 %) satisfied the acceptance limit. The second audit was carried out for the centers outside the limit and ail of them have been corrected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.175-178
• /
• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Society of Medical Physics Conference
• /
• 2002.09a
• /
• pp.161-163
• /
• 2002

The BNCT(Boron Neutron Capture Therapy) facility has been developed in Hanaro(High-flux Advanced Neutron Application Reactor), a research reactor of Korea Atomic Energy Research Institute. A typical tangenial beam port is utilized with this BNCT facility. Thermal neutrons can be penetrated within the limits of the possible maximum instead of being filtered fast neutrons and gamma rays as much as possible using the silicon and bismuth single crystals. In addition to, the liquid nitrogen (LN$_2$) is used to cool down the silicon and bismuth single crystals for the increase of the penetrated thermal neutron flux. Neutron beams for BNCT are shielded using the water shutter. The water shutter was designed and manufactured not to interfere with any other subsystem of Hanaro when the BNCT facility is operated. Also, it is replaced with conventional beam port plug in order to cut off helium gas leakage in the beam port. A circular collimator, composed of $\^$6/Li$_2$CO$_3$ and polyethylene compounds, is installed at the irradiation position. The measured neutron flux with 24 MW reactor power using the Au-198 activation analysis method is 8.3${\times}$10$\^$8/ n/cm$^2$ s at the collimator, exit point of neutron beams. Flatness of neutron beams is proven to ${\pm}$ 6.8% at 97 mm collimator. According to the result of acceptance tests of the water shutter, the filling time of water is about 190 seconds and drainage time of it is about 270 seconds. The radiation leakages in the irradiation room are analyzed to near the background level for neutron and 12 mSv/hr in the maximum for gamma by using BF$_3$ proportional counter and GM counter respectively. Therefore, it is verified that the neutron beams from BNCT facility in Hanaro will be enough to utilize for the purpose of clinical and pre-clinical experiment.

• Journal of Sensor Science and Technology
• /
• v.10 no.6
• /
• pp.328-337
• /
• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of the Microelectronics and Packaging Society
• /
• v.31 no.1
• /
• pp.43-48
• /
• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.638-643
• /
• 1994

The Si(ll1) surface structures induced by deposition of Au atoms were investigated by RHEED system. When Au atoms were deposited on the Si(ll1) $7\times7$ surfade, the dependence of structures and phases on the substrate temperatures and coverages was drastic. For O.1ML to 0.4ML of coverage the $7\times7$ structure changes to $7\times7$ + $5\times2$ structure as temperature increases to $350^{\circ}C$-$750^{\circ}C$. Between 0.4M1 to 1.OML the phase changed to $5 \times 2,\alpha- \sqrt{3} \times \sqrt{3},\beta- \sqrt{3} \times \sqrt{3}$ structure according to the substrate temperature and coverages. When the coverages exceeds O.SML, the 6 x 6 structure appears at the substrate temperature range between $270^{\circ}C$-$370^{\circ}C$ and compeletely transforms to 6 x6 at 1,OML. The isothermal desorption of Au on Si(ll1) surface investigated by using AES in the $\alpha- \sqrt{3} \times \sqrt{3},5 \times 2$ structures shows that the desorption energys of $\alpha- \sqrt{3} \times \sqrt{3}$ and 5 x 2 were 79Kcal/mol and 82 Kcal/mol respectively.

• 한국태양에너지학회:학술대회논문집
• /
• 2012.03a
• /
• pp.149-152
• /
• 2012

$Cu(In,Ga)Se_2$ (CIGS) is one of the most promising photovoltaic materials because of large conversion efficiency which has been achieved with an optimum Ga/(In+Ga) composition in $CuIn_{1-x}Ga_xSe_2$ (X~0.3). The Ga/(In+Ga) content is important to determine band gap, solar cell performances and carrier behaviors at grain boundary (GB). Effects of Ga/(In+Ga) content on physical properties of the CIGS layers have been extensively studied. In previous research, it is reported that GB is not recombination center of CIGS thin-film solar cells. However, GB recombination and electron-hole pair behavior studies are still lacking, especially influence of with different X on CIGS thin-films. We obtained the GB surface potential, local current and I-V characteristic of different X (00.7 while X~0.3 showed higher potential than 100 mV on GBs. Higher potential on GBs appears positive band bending. It can decrease recombination loss because of carrier separation. Therefore, we suggest recombination and electron-hole behaviors at GBs depending on composition of X.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.498-498
• /
• 2013

Atmospheric Pressure Plasmas have pioneered a new field of plasma for biomedical application bridging plasma physics and biology. Biological and medical applications of plasmas have attracted considerable attention due to promising applications in medicine such as electro-surgery, dentistry, skin care and sterilization of heat-sensitive medical instruments [1]. Traditional approaches using electronic devices have limits in heating, high voltage shock, and high current shock for patients. It is a great demand for plasma medical industrial acceptance that the plasma generation device should be compact, inexpensive, and safe for patients. Microwave-excited micro-plasma has the highest feasibility compared with other types of plasma sources since it has the advantages of low power, low voltage, safety from high-voltage shock, electromagnetic compatibility, and long lifetime due to the low energy of striking ions [2]. Recent experiment [2] shows three-log reduction within 180-s treatment of S. mutans with a low-power palm-size microwave power module for biomedical application. Experiments using microwave plasma are discussed. This low-power palm-size microwave power module board includes a power amplifier (PA) chip, a phase locked loop (PLL) chip, and an impedance matching network. As it has been a success, more compact-size module is needed for the portability of microwave devices and for the various medical applications of microwave plasma source. For the plasma generator, a 1.35-GHz coaxial transmission line resonator (CTLR) [3] is used. The way of reducing the size and enhancing the performances of the module is examined.