• 연구논문집
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• 통권30호
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• pp.137-145
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• 2000

Since the concept of osseointegration was introduced, titanium and titanium-based alloy materials have been increasingly used for bone-anchored metal in oralmaxillofacial and orthopedic reconstruction. Successful osseointegration has been attributed to biocompatibility and surface condition of metal implant among other factors. Although titanium and titanium alloys have an excellent over the metal ion release and biocompatibility, considerable controversy has developed over the metal ion and wear debris in vivo and vitro. In this study, nitrogen ion implantation technique was used to improve the corrosion resistance and wear property of titanium materials, ultimately to enhance the tissue reaction to titanium implants As ion implantation energy was increased, projected range of nitrogen ion the Ti substrate was gradually increased. Under condition of constant ion energy. atomic concentration of nitrogen was also increased with ion doses. The friction in Hank's solution was increased with ion doses. The friction coefficient of ion implanted specimens in HanK's solution was increased from 0.39, 0.47 to 0.52, 0.65 respectively under high energy and ion dose conditions. As increasing ion energies and ion dose, amount of wear was reduced.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.289-300
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• 2002

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.

• 에너지공학
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• 제18권2호
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• pp.125-131
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• 2009

경도, 내마모성과 내부식성 등과 같은 금속의 물리적 특성은 이온주입에 의해 인위적으로 제어되어 질 수 있다. 이온주입의 특성을 관찰하기 위하여 분자동역학법을 이용하여 이온과 표면원자사이의 상호작용에 대해 미시적인 원자.분자 스케일로 현상을 모델화하여 수치해석을 수행하였다. 본 연구는 이온주입의 특성을 개선하기 위한 수치해석 연구로써 미시적인 관점에서 이온주입의 프로세스를 관찰하고자 하였다. 이를 위해 주입이온속도에 따른 주입메카니즘과 초기표면온도, 이온분자량 등의 영향을 조사하였다. 그 결과 초기 표면원자층의 온도가 높은 경우에 주입에너지가 어느 값 이상이 되면 오히려 주입확률이 감소하며 또한 비결정질상태인 표면원자층에 대한 이온주입은 양호한 조건의 설정에 따라 더 효과적일 수 있음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2014

For two-dimensional grid electrodes immersed in plasmas, sheath expansion due to negative high-voltage pulse applied to the electrode generates high-energy pseudowave. The high-energy pseudowave can be used as ion beam for ion implantation. To estimate ion dose due to high-energy pseudowave, investigation on sheath expansion of grid electroes is necessary. To investigate sheath expansion, an analytic model was developed by Vlasov equation and applying the 1-D sheath expansion model to 2-D. Because of lack of generalized 2-D Child-Langmuir current, model cannot give solvable equation. Instead, for a given grid electrode geometry, the model found the relations between ion distribution functions, Child-Langmuir currents, and sheath expansions. With these relations and particle-in-cell (PIC) simulations, for given grid electrode geometry, computation time was greatly reduced for various conditions such as electrode voltages, plasma densities, and ion species. The model was examined by PIC simulations and experiments, and they well agreed.

• 한국진공학회지
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• 제4권S2호
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• pp.100-105
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of $1\times 10^{17}$ions/$\textrm{cm}^2$ to $1\times 10^{18}$ions/$\textrm{cm}^2$ at various temperatures between $270^{\circ}C$ and $671^{\circ}C$. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above $3\times 10^{17}$ions/$\textrm{cm}^2$ as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400 $H_k$ from 200 $H_k$ of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760 $H_k$ at $620^{\circ}C$. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.407-413
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• 2005

Ion implantation provides a unique way to modify the mechanical, optical and electrical properties of polymer by depositing the energy of ions in the material on the atomic scale. Implantation of ions into the polymers generally leads to a radiation damage, which, in many cases, modifies the properties of the surface and bulk of the material. These modifications result from the changes of the chemical structure caused in their turn by changing the chemical bonding when the incident ions cut the polymer chains, breaks covalent bonds, promotes cross-linking, and liberates certain volatile species. We studied the relation among the linear energy transfer (LET) and changes of surface microstructure and surface resistivity on PPS material using the high current ion implantation technology The surface resistivity of nitrogen implanted PPS decreased to $10^{7}{\Omega}/cm^{2}$ due to the chain scission, cross linking, ${\pi}$ electron creation and mobility increase. In this case, the surface conductivity depend on the 1-dimensional hopping mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.237.1-237.1
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• 2011

Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.157-158
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• 2002

A surface hardenable low alloy carbon steel was implanted with medium energy (20 - 50KeV) $N_2^+$ ions to produced a modified hardened surface. The implantation conditions were varied and are given in several doses. The surface hardness of treated and untreated steels were measured using depth sensing ultra micro indentation system (UMIS). It is shown that the hardness of nitrogen ion implanted steels varied from 20 to 50GPa depending on the implantation conditions and the doses of implantation. The structure of the modified surfaces was examined by X-ray photoelectron spectroscopy (XPS). It was found that the high hardness on the implanted surfaces was as a result of formation of non-equilibrium nitrides. High-resolution XPS studies indicated that the nitride formers were essentially C and Si from the alloy steel. The result suggests that the ion implantation provided the conditions for a preferential formation of C and Si nitrides. The combination of evidences from nano-indentation and XPS, provided a strong evidence for the existence of $sp^3$ type of bonding in a suspected $(C,Si)_xN_y$ stoichiometry. The formation of ultra hard surface from relatively cheap low alloy steel has significant implication for wear resistance implanted low alloy steels.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.170-170
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• 2000

Synthetic polymers such as polyimide, polycarbonate, and poly(methyl methacrylate) are long chain molecules which consist of carbon, hydrogen, and heteroatom linked together chemically. Recently, polymer surface can be modified by using a high energy ion beam process. High energy ions are introduced into polymer structure with high velocity and provide a high degree of chemical bonding between molecular chains. In high energy beam process the modified polymers have the highly crosslinked three-dimensionally connected rigid network structure and they showed significant improvements in electrical conductivity, in hardness and in resistance to wear and chemicals. Polyimide films (Kapton, types HN) with thickness of 50~100${\mu}{\textrm}{m}$ were used for investigations. They were treated with two different surface modification techniques: Plasma Source Ion Implantation (PSII) and conventional Ion Implantation. Polyimide films were implanted with different ion species such as Ar+, N+, C+, He+, and O+ with dose from 1 x 1015 to 1 x 1017 ions/cm2. Ion energy was varied from 10keV to 60keV for PSII experiment. Polyimide samples were also implanted with 1 MeV hydrogen, oxygen, nitrogen ions with a dose of 1x1015ions/cm2. This work provides the possibility for inducing conductivity in polyimide films by ion beam bombardment in the keloelectronvolt to megaelectronvolt energy range. The electrical properties of implanted polyimide were determined by four-point probe measurement. Depending on ion energy, doses, and ion type, the surface resistivity of the film is reduced by several orders of magnitude. Ion bombarded layers were characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), XPS, and SEM.