• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.47-53
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• 2014

Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon is the main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystal interface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is the contamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. And also, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of the MCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner side crucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growing apparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as the optimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom of the crucible would be one of the solutions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.

• Journal of Power Electronics
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• v.4 no.1
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• pp.46-55
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• 2004

This paper presents a high-frequency ZVS-PWM boost chopper-fed DC-DC converter with a single active auxiliary edge resonant snubber in the load-side which can be designed for power conditioners such as solar photovoltaic generation, fuel cell generation, battery and super capacitor energy storages. Its principle operation in steady-state is described in addition to a prototype setup. The experimental results of ZVS-PWM boost chopper-fed DC-DC converter proposed here, are evaluated and verified with a practical design model in terms of its switching voltage and current waveforms, the switching v-i trajectory, the temperature performance of IGBT module, the actual power conversion efficiency and the EMI of radiated and conducted emissions. And then discussed and compared with the hard switching scheme from an experimental point of view. Finally, this paper proposes a practical method to suppress parasitic oscillation due to the active auxiliary resonant switch at ZCS turn off mode transition with the aid of an additional lossless clamping diode loop, and reduced the EMI conducted emission in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.341-344
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• 2018

In order to achieve a high efficiency for the silicon solar cell, a passivation characteristic that minimizes the electrical loss at a silicon interface is required. In this paper, we evaluated the applicability of the oxide film formed by ozone for the tunnel silicon oxide film. To this end, we fabricated the silicon oxide film by changing the condition of ozone oxidation and compared the characteristics with the oxide film formed by the existing nitric acid solution. The ozone oxidation was formed in the temperature range of $300{\sim}500^{\circ}C$ at an ozone concentration of 17.5 wt%, and the passivation characteristics were compared. Compared to the silicon oxide film formed by nitric acid oxidation, implied open circuit voltage (iVoc) was improved by ~20 mV in the ozone oxidation and the ozone oxidation after the nitric acid pretreatment was improved by ~30 mV.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.223-226
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• 2003

This paper presents a high-frequency ZVS-PWM boost chopper-fed DC-DC converter with a single active auxiliary edge-resonant snubber which is used for power conditioner such as solar photovoltaic generation and fuel cell generation. The experimental results of boost chopper fed ZVS-PWM DC-DC converter are evaluated. In audition to its switching voltage and current waveforms, and the switching v-i trajectory of the power devices are discussed and compared with the conventional hard switching DC-DC converter treated here. The temperature performance of IGBT module,, efficiency, and EMI noise characteristics of this ZVS-PWM DC-DC converter using IGBTs are measured and evaluated from an experimental point of view.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.507-512
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• 2016

Expensive silver powder is used to form electrodes in most IT equipment, and recently, many attempts have been made to lower manufacturing costs by developing powders with Ag-Ni or Ag-Cu core-shell structures. This study examined the sintering behavior of Ag-Ni electrode powder with a core-shell structure for silicon solar cell with high energy efficiency. The electrode powder was found to have a surface similar to pure Ag powder, and cross-sectional analysis revealed that Ag was uniformly coated on Ni powder. Each electrode was formed by sintering in the range of $500^{\circ}C$ to $800^{\circ}C$, and the specimen sintered at $600^{\circ}C$ had the lowest sheet resistance of $5.5m{\Omega}/{\Box}$, which is about two times greater than that of pure Ag. The microstructures of electrodes formed at varying sintering temperatures were examined to determine why sheet resistance showed a minimum value at $600^{\circ}C$. The electrode formed at $600^{\circ}C$ had the best Ag connectivity, and thus provided a better path for the flow of electrons.

• Journal of Power Electronics
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• v.7 no.2
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• pp.109-117
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• 2007

In this paper, a novel proposal for a utility-interactive three-phase soft commutation sinewave PWM power conditioner with an auxiliary active resonant DC-link snubber is developed for fuel cell and solar power generation systems. The prototype of this power conditioner consists of a PWM boost chopper cascaded three-phase power conditioner, a single two-switch auxiliary resonant DC-link snubber with two electrolytic capacitors incorporated into one leg of a three-phase V-connection inverter and a three-phase AC power source. The proposed cost-effective utility-interactive power conditioner implements a unique design and control system with a high-frequency soft switching sinewave PWM scheme for all system switches. The operating performance of the 10 kW experimental setup including waveform quality, EMI/RFI noises and actual efficiency characteristics of the proposed power conditioner are demonstrated on the basis of the measured data.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.312.2-312.2
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• 2013

태양전지에서 SiNX층은 반사방지막 역할과 표면 페시베이션의 역할을 동시에 하고 있다. SiNx에서 굴절율과 두께는 반사율과 밀접한 관계가 있으며 동시에 표면 소수캐리어 수명에도 큰 영향을 미친다. 따라서 굴절율과 두께를 조절하여 낮은 반사도와 긴 소수캐리어 수명을 가지는 SiNx 박막을 제조하여야 우수한 효율의 태양전지를 제조할 수 있다. 본 연구에서는 다양한 굴절율과 두께의 SiNx 박막을 결정질 실리콘 태양전지에 적용하여 효율과의 상관관계를 해석하였다. SiNx 박막은 PECVD장비를 이용하여 RF파워, 가스혼합량, 증착시간 등을 각각 변화시키며 형성하였다. RF 파워는 100~500 W로 변화 시켰고 혼합가스 변화는 SiH4가스와 NH3가스, Ar가스를 각각 주입하며 증착하였다. RF 파워 300W, 가스혼합량 SiH4 90sccm, NH3 26sccm, Ar 99sccm과 기판 온도 $300^{\circ}C$, 공정시간 58초에서 포면 반사율 1.09%와 굴절률 1.965, 두께 76nm를 갖는 SiNx층을 형성 할 수 있었다. SiNx층을 증착하여 셀을 제작한 결과, 개방전압: 0.612V, 전류밀도: 38.49 mA/cm2, 충실도: 75.62%, 효율: 17.82%를 얻을 수 있었다.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.528-533
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• 2018

In recent years, solar cells based on crystalline silicon(c-Si) have accounted for much of the photovoltaic industry. The recent studies have focused on fabricating c-Si solar modules with low cost and improved efficiency. Among many suggested methods, a photovoltaic module with a shingled structure that is connected to a small cut cell in series is a recent strong candidate for low-cost, high efficiency energy harvesting systems. The shingled structure increases the efficiency compared to the module with 6 inch full cells by minimizing optical and electrical losses. In this study, we propoese a new Conductive Paste (CP) to interconnect cells in a shingled module and compare it with the Electrical Conductive Adhesives (ECA) in the conventional module. Since the CP consists of a compound of tin and bismuth, the module is more economical than the module with ECA, which contains silver. Moreover, the melting point of CP is below $150^{\circ}C$, so the cells can be integrated with decreased thermal-mechanical stress. The output of the shingled PV module connected by CP is the same as that of the module with ECA. In addition, electroluminescence (EL) analysis indicates that the introduction of CP does not provoke additional cracks. Furthermore, the CP soldering connects cells without increasing ohmic losses. Thus, this study confirms that interconnection with CP can integrate cells with reduced cost in shingled c-Si PV modules.