• 제목/요약/키워드: High Density Storage

검색결과 581건 처리시간 0.026초

Lithium Air Battery: Alternate Energy Resource for the Future

  • Zahoor, Awan;Christy, Maria;Hwang, Yun-Ju;Nahm, Kee-Suk
    • Journal of Electrochemical Science and Technology
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    • 제3권1호
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    • pp.14-23
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    • 2012
  • Increasing demand of energy, the depletion of fossil fuel reserves, energy security and the climate change have forced us to look upon alternate energy resources. For today's electric vehicles that run on lithium-ion batteries, one of the biggest downsides is the limited range between recharging. Over the past several years, researchers have been working on lithium-air battery. These batteries could significantly increase the range of electric vehicles due to their high energy density, which could theoretically be equal to the energy density of gasoline. Li-air batteries are potentially viable ultra-high energy density chemical power sources, which could potentially offer specific energies up to 3000 $Whkg^{-1}$ being rechargeable. This paper provides a review on Lithium air battery as alternate energy resource for the future.

PLD 법으로 제작된 PLZT 박막의 산소압에 따른 구조 및 전기적 특성 (Oxygen Pressure Dependence of Structural and Electrical Characteristics of PLZT Thin Films Prepared by a PLD)

  • 장낙원
    • Journal of Advanced Marine Engineering and Technology
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    • 제30권8호
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    • pp.927-933
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    • 2006
  • The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

STIMULATING NEURAL ELECTRODE-A STUDY ON CHARGE INJECTION PROPERTIES OF IRIDIUM OXIDE FILMS

  • Lee, In-Seop;Ray A. Buchanan;Jim M.Williams
    • 한국진공학회지
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    • 제4권S2호
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    • pp.156-162
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    • 1995
  • For a stimulating neural electrode, the charge density should be as large as possible to provide adequate stimulation of the nervous system while allowing for miniaturization of the electrode. Since iridium oxide is able to produce high charge densities while preventing undesirable reactions due to charge storage, it has become a promising material for neural prostheses. Successful production of stable Ir and Ir oxide films on various substrates now limits the use of this material. Ir was deposited on two differently prepared surface of (mirror finish, passivation) surgical Ti-6AI-4V with several methods. Ion beam mixing of sputter deposited Ir films on passivated Ti-6AI-4V produced stable and good adherent Ir films. It was found that the increase in charge density of pure Ir on continuous cyclingis due to the accumulation of the oxide phase ( associated with a large surface area) in which the valence state of iridium changes and the double-layer capacitance increases. This study also showed that the double layer capacitance is equally or even more responsible for the high charge density of anodically formed Ir oxide.

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경사하강법을 이용한 낸드 플래시 메모리기반 저장 장치의 고효율 수명 예측 및 예외처리 방법 (High Efficiency Life Prediction and Exception Processing Method of NAND Flash Memory-based Storage using Gradient Descent Method)

  • 이현섭
    • 융합정보논문지
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    • 제11권11호
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    • pp.44-50
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    • 2021
  • 최근 빅데이터를 수용하기 위한 대용량 저장 장치가 필요한 엔터프라이즈 저장 시스템에서는 비용과 크기 대비 직접도가 높은 대용량의 플래시 메모리 기반 저장 장치를 많이 사용하고 있다. 본 논문에서는 엔터프라이즈 대용량 저장 장치의 신뢰도와 이용성에 직접적인 영향을 주는 플래시 메모리 미디어의 수명을 극대화 하기 위해 경사하강법을 적용한 고효율 수명 예측 방법을 제안한다. 이를 위해 본 논문에서는 불량 발생 빈도를 학습하기 위한 메타 데이터를 저장하는 매트릭스의 구조를 제안하고 메타데이터를 이용한 비용 모델을 제안한다. 또한 학습된 범위를 벗어난 불량이 발생 했을 때 예외 상황에서의 수명 예측 정책을 제안한다. 마지막으로 시뮬레이션을 통해 본 논문에서 제안하는 방법이 이전까지 플래시 메모리의 수명 예측을 위해 사용되어 온 고정 횟수 기반 수명 예측 방법과 예비 블록의 남은 비율을 기반으로 하는 수명 예측 방법 대비 수명을 극대화 할 수 있음을 증명하여 우수성을 확인했다.

High-Performance and Fabrication of Graphene-based Flexible Supercapacitor

  • Ra, Eun Ju;Han, Jae Hee;Kim, Kiwoong;Lee, Sun Suk;Kim, Tae-Ho;An, Ki-Seok;Lim, Jongsun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.442-442
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    • 2014
  • Although electrochemical capacitors (ECs), also known as supercapacitors or ultracapacitors, is one of the most promising energy-storage devices because of its high power density, super-high cycle life, and safe operation. We herein report a synthesis of graphene-based flexible films by kneading method. Thus, a device can be readily made by sandwiching a polymer membrane included ionic liquid electrolytes between two identical graphene-based flexible films. Devices made with these electrodes exhibit ultrahigh energy density values while maintaining the high power density and excellent cycle stability of ECs. Moreover, these ECs maintain excellent electrochemical attributes under high mechanical stress and thus hold promise for high-energy, flexible electronics.

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High density plasma etching of CoFeB and IrMn magnetic films with Ti hard mask

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.233-233
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

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정압식 압축공기저장(CAES) 발전 시스템 에너지 분석 (Energy Analysis of Constant-Pressure Compressed Air Energy Storage (CAES) Generation System)

  • 김영민;이선엽;이장희
    • 에너지공학
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    • 제20권3호
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    • pp.178-184
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    • 2011
  • 압축공기저장(CAES) 발전은 가스터빈에 필요한 압축공기를 야간이나 비첨두 시간에 저렴한 전기로 미리 압축해서 저장하였다가 주간에 활용하는 것으로 전력 저장과 발전의 하이브리드 기술이라고 할 수 있다. 그러나 기존 압축공기저장 발전의 경우 심야에 압축공기를 일정부피의 압축공기 저장조에 충전하게 되면 저장조내의 압력은 점점 증가하게 되고, 반대로 주간에 발전을 위해 압축공기를 방출하게 되면 저장조내의 압력은 감소하게 된다. 이와 같이 운전 압력비 조건이 넓은 범위로 변화하여 설계 압력비에서 벗어나게 되는 것은 압축 및 팽창효율이 크게 감소하게 되는 원인이 된다. 본 논문에서는 이러한 기존의 변압식 압축공기저장 발전 방식의 문제점을 해결하기 위해 새로운 방식의 정압식 압축공기저장 발전 방식을 제시하고 있으며, 엑서지 개념을 포함한 에너지 분석을 통해 에너지 밀도 증가와 효율 향상 효과를 예측하였다. 새로운 방식의 정압식 압축공기 저장 발전 방식은 정압식 압축공기 저장 발전과 공압식 양수발전의 하이브리드 개념으로 기존 변압식 압축공기저장 발전 방식에 비해 정압 운전에 의한 효율향상과 에너지 밀도 증가로 압축공기 저장조의 크기를 50%이상 줄일 수 있는 장점을 가지고 있다.

Two-Bit/Cell NFGM Devices for High-Density NOR Flash Memory

  • Lee, Jong-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.11-20
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    • 2008
  • The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

무선센서 네트워크 기술 기반 액화가스 저장탱크 내 잔량 모니터링 시스템 구현 (Implementation of a Residual Quantity Monitoring System in a Liquefied Gas Storage Tank based on Wireless Sensor Network Technology)

  • 김민규;한해진;한재환
    • 센서학회지
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    • 제27권5호
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    • pp.352-356
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    • 2018
  • This paper relates to a technology for monitoring a liquefied gas storage tank in the special gas field where demand is increasing owing to the continuous growth of related fields such as the semiconductor, display, and ICT convergence electronics industries. We have proposed a system for real - time monitoring using wireless sensor network technology, and implemented a system consisting of a sensor unit, transmitter module, and receiver module to be attached to a liquefied gas storage tank. The system was applied to LCO2 tanks among various liquefied gas storage tanks to verify the feasibility. The storage tanks employed in the experiments has capacities of 16,179 l and was 1,920 mm in inner diameter. Furthermore, the density was 1.03 g/l. The measured data were compared with reference data on the remaining gas level versus the $CO_2$ height of the surface, expressed using a conventional water meter, provided by an existing storage tank supplier. The experimental results show that the data is similar to the standard data provided by the tank supplier, and has a high accuracy and reliability within an error range of 0.03%.