• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.13 no.6
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• pp.474-483
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• 2003

In this study, the dynamic characteristics of a catenary system and pantograph supplying electrical power to high-speed trains are investigated. One of the most important issues accompanied by increasing the speed of high-speed rail is stabilization of current collection. To stabilize current collection, it is necessary the contact force between the catenary and the pantograph to be kept continuous without loss of contact. The analytical model of a catenary and a pantograph is constructed to simulate the behavior of an actual system. The analysis of the catenary based on the Finite Element Method (FEM) is performed to develop a catenary model suitable for high speed operation. The reliability of the models is verified by the comparison of the excitation test with Fast Fourier Transform (FFT) data of the actual system. The static deflection of the catenary, stiffness variation in contact lines, dynamic response of the catenary undergoing constant moving load, contact force, and each state of the pantograph model were calculated. It is confirmed that a catenary and pantograph model are necessary for studying the dynamic behavior of the pantograph system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.117-120
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• 2019

Graphene is recognized as a promising material for silicon photonics, since it has a wide optical-window that entirely covers the optical communication wavelength region ($1.3{\sim}1.6-{\mu}m$) and extremely high-carrier mobility that makes it possible to fabricate the high-speed photodetectors. However, the maximum absorbance of monolayer graphene is only 2.3%, which limits the photoresponse characteristics of graphene photodetectors. As a result, a low photoresponsivity of graphene photodetector is a critical issue limiting the use of graphene photodetectors in the optical communications field. In this paper, we investigated effects of optically-modulated metal-graphene contact on the photoresponsivity of graphene photodetectors. The optical modulation of the contact resistance mainly determined the photoresponse characteristics of graphene photodetectors. The Ni-contact graphene photodetector which has a characteristic of the significant optical modulation of metal-graphene contact showed a higher photoresponsivity than the Pd-contact device. This work will provide a way to improve the photoresponse characteristics of graphene-based photodetector and contribute to the development of high-speed/high-responsivity graphene photodetector.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.816-821
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• 2005

The cycloid reducer has very high efficiency, high ratios, high stiffness and small size, in comparison with a conventional gear mechanism, which makes it an attractive candidate for limited space and precision application such as industrial robot. There are several publications on analysis and design of the cycloid reducer, however, it was assumed that the contact stiffness of pin rollers and cycloid disk is constant regardless of their contact geometry. Moreover, the torsional stiffness of the cycloid reducer couldn't be calculated due to the assumption. In this paper, we present a new procedure of calculating torsional stiffness of the cycloid reducer using Hertz contact theory. First, conventional force analysis of the cycloid reducer is briefly reviewed. Then, iterative numerical calculation procedure of the contact stiffness is proposed based on the Hertz contact theory where the contact stiffness depends on the contact force. In addition, total torsional stiffness of the cycloid reducer is estimated considering its rolling element bearing stiffness. The torsional stiffness of the cycloid reducer is dominated by the rolling element bearing stiffness since the contact stiffness of the cycloid disk is too large.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.235-240
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• 2009

Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.345-350
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• 2011

This paper was carried about optimization for high efficiency of point contact solar cell. We have studied on the characteristics of power converter according to each parameter for the optimization for high efficiency of point contact solar cell on this study. We have 25.1352% of convert efficiency after adapt optimal parameters as mentioned in point body and superior conclusion is drawn by comparison with general efficiency has within 20%. At this time, the value of parameter is 100 um cell pitch, 0.01 um AR coating, 0.9 um N+ FSF thickness., etc. This study will continue to go on for optimization for efficiency in future, as it looks now, the results of this study would contribute to the business of high efficiency of point contact solar cell.

• Journal of Mechanical Science and Technology
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• v.16 no.4
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• pp.436-447
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• 2002

In this study, the dynamic response of a catenary system that supplies electrical power to high-speed trains is investigated. One of the important problems which is accompanied by increasing the speed of a high-speed rail, is the performance of stable current collection. Another problem which has been encountered, is maintaining continuous contact force between the catenary and the pantograph without loss of panhead. The dynamic analyses of the catenary based on the Finite Element Method (FEM) are performed to develop a pantograph suitable for high speed operation. The static deflection of the catenary, the stiffness variation in contact lines, the dynamic response of the catenary undergoing the force of a constantly moving load and the contact force were calculated. It was confirmed that a catenary model is necessary to study the dynamic characteristics of the pantograph system.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).