• Title/Summary/Keyword: Hi-pulse

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Study on Reillumination of Hi-soo type Electronic Manometer (희수식 전자 맥진기의 재조명)

  • Kim, Eun-Hye;Kim, Byung-Soo;Kang, Jung-Soo
    • Journal of Haehwa Medicine
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    • v.18 no.2
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    • pp.37-45
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    • 2009
  • In early 1970s, Electronic Manometers were researched and developed for modernization and objectification of pulse diagnosis. Method of finger pressing, also known as cuffs pressing, is essential for sensing a pulse wave. I think comprehension and deduction of problem from the existing Hi-soo type electronic manometer, will be important for making a better one. The Hi-soo type electronic manometer is constructed of cuff pressing type sensor, differential amplifier, transmitter and recorder. Pulse movement and pulse wave, gauging blood flow, is analyzed by pulse image of "Yixuerumen(醫學入門)". At standard of pulse wave, huanmai(緩脈) is distinguish from chishu(slow and fast, 遲數), fushen(float and sink, 浮沈), interference wave, modificated wave, and phase angel. The Hi-soo type electronic manometer had no explanation of formational mechanism, significantly different with pulse wave which is early known and reported. The strength of Hi-soo type electric manometer is use of cuff pressing type sensor. Above all, the importance of electric manometer is reading the pulse movement accurately then expressing it as pulse wave. From now on the improvement of precise sensor should make a progress.

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A Research on the Optimization of Turbocharging System in a Medium Speed Diesel Engine (중형 디젤엔진의 터보챠저 과급 시스템 최적화에 관한 연구)

  • Youn Wook-Hyun;Gal Sang-Hak;Ha Ji-Soo;Kim Ho-Ick;Kim Ju-Tae;Kim Ki-Doo
    • Journal of Advanced Marine Engineering and Technology
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    • v.28 no.7
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    • pp.1138-1144
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    • 2004
  • In order to improve engine performance while overcoming the weak points of Pulse and MPC(Modular Pulse Converter) turbocharging system, a new turbocharging system. "Hi-Pulse system", has been introduced and developed for medium speed diesel engine. HYUNDAI HiMSEN engines. Hi-Pulse system is to utilize not only the benefits of MPC system at higher load but also the ones of Pulse system at lower load. As for the results. the specific fuel oil consumption and NOx emission were lowered compared with the Pulse and MPC system. Performance simulation were carried out to optimize intake and exhaust timing and exhaust duct arrangement and to improve the performance of Hi-Pulse system engine.em engine.

Bi-polar High-voltage Pulse Generator Using Semiconductor switches (반도체 스위치를 이용한 양방향 고압 펄스 발생기)

  • Kim J.H.;Ryu M.Y.;Jung I.W.;Shenderey S.;Kim J.S.;Rim G.H.
    • Proceedings of the KIPE Conference
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    • 2003.07a
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    • pp.291-293
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    • 2003
  • A semiconductor switch-based fast hi-polar high voltage pulse generator is proposed in this paper The proposed pulse system is made of a thyristor based-rectifier, DC link capacitor, a push-pull resonant inverter, a high voltage transformer. secondary capacitor, a high voltage IGBT & diode stacks, and a variable capacitor. The proposed system makes hi-polar high voltage sinusoidal waveform using resonance between leakage inductance of the transformer and secondary capacitor and transfers energy to output load at maximum of the secondary capacitor voltage. Compared to previous hi-polar high voltage pulse power supply using nonlinear transmission line, the proposed pulse power system using only semiconductor switches has simple structure and gives high efficiency

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Strain-Relaxed SiGe Layer on Si Formed by PIII&D Technology

  • Han, Seung Hee;Kim, Kyunghun;Kim, Sung Min;Jang, Jinhyeok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.155.2-155.2
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    • 2013
  • Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

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EXPANSION OF HYUNDAI'S MEDIUM SPEED DIESEL ENGINE FAMILY, HiMSEN (현대중공업 중속디젤엔진 힘센엔진 패밀리의 신모델 추가 개발)

  • Kim, J.S.;Kim, J.T.;Kwon, O.S.
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2005.06a
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    • pp.92-100
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    • 2005
  • Since HiMSEN H21/32, a new medium speed diesel engine of Hyundai's own design, was introduced in 2001, Hyundai has added new models of H25/33 and H17/28 into HiMSEN engine family. These two new engines take after faithfully to the original HiMSEN concept of a PRACTICAL engine by Hi-Touch and Hi-Tech. The prototype of H25/33 was developed jointly with Rolls Royce Bergen originally and also introduced in 2001. But most of the engine design have been changed by Hyundai for the commercial versions to be a member of HiMSEN family, which has little interchangeability with the prototype. H17/28 is now under development as the smallest size of the family. This new engine also has the longest stroke of a class engine, which has been proven as the best basis for future environmental challenge. The higher compression ratio of 17 and optimized Miller Timing with Simplified pulse turbocharging system applied all HiMSEN engines as which showed the most practical solution against current heavy fuel combustion issues for the time being before introducing digital control system. This paper describes the design and development of these new HiMSEN engines and also reviews the service experiences of H21/32 and H25/33, which launched successfully.

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A Rapid Method for the Measurement of $^{222}Rn$ in Groundwater and Hot Spring Water using Ultra Low-Level Liquid Scintillation Counter and Pulse Shape Analysis (극저준위 액체섬광계수기와 파형분석법을 이용한 지하수 및 온천수중 $^{222}Rn$의 신속측정법)

  • Kim, Chang-Kyu;Kim, Cheol-Su
    • Journal of Radiation Protection and Research
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    • v.20 no.2
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    • pp.103-115
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    • 1995
  • For the determination of $^{222}Rn$ in water by a very simple and time saving liquid scintillation counting method that does not require any chemical separation, an optimum analytical condition has been investigated. The optimum pulse shape analysis(PSA) level for the measurement of $^{222}Rn$ using LKB 1220 Quantulus liquid scintillation counter was 110 for Optiphase HiSafe3 cocktail and 90 for toluene-based cocktail. The counting efficiencies of $^{222}Rn$ in the window covering u spectra using Optiphase HiSafe3 cocktail were 282.2% for glass vial and 271.6% for Teflon vial, whereas the counting efficiencies in toluene-based cocktail were 262.3% and 247.5% for glass and Teflon vials, respectively. The minimum detectable activity(MDA) in the u window for a 60-min measurement with a Teflon vial using Optiphase HiSafe3 cocktail was $0.30Bq/{\iota}$. The analytical method studied from this work was also applied to the determination of $^{222}Rn$ in some groundwater and hot spring water samples.

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A Novel Spectral Analysis of Ultrashort Pulse Transmission Using the Pulse-Ordering Concept

  • Jae-hong;Hi-chang Chung;Jin-sung Jun;Yong-sun Oh
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.7A
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    • pp.986-993
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    • 2000
  • In this paper, we analyze transmission characteristics of ultrashort laser pulses using the properties of high-order pulses which are systematically obtained following their orders. The high-order pulses are easily derived from a modified PRS system model. But we make clear they are very useful to cover wider area and to show more accurate transmission characteristics of ultrashort pulses than Gaussian or Sech pulse approximations used conventionally. These are based on the fact that the spectra and bandwidths of the high-order pulses are geautifully related to their orders. First modifying the generalized PRS system model, we propose a new model for deriving any type of high-order pulse. And we offer a novel analysis method of ultrashort pulse transmission varying the order of the pulse from n=1 to n=100, we obtain spectra of ultrashort pulses with 1(ps)∼150(fs) FWHM's, which are widely used in optical pulse communications. One-step further, we derive PSD's of their pulse-tr ins when they are applied to Unipolar signaling scheme. These PSD's are decided in the range of possible pulse intervals. All of these results are not only coincided with some conventional experimental works but will be applied to any pioneering ultrashort pulse in the future.

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Development of A Hi9h Voltage Pulse Generator for EP (140kV, 20mA급 전기집진기용 고압 펄스 발생장치 개발)

  • Kim, W.H.;Kim, J.S.;Kang, I.;Rim, G.H.;Kim, C.U.
    • Proceedings of the KIEE Conference
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    • 1999.07f
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    • pp.2623-2625
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    • 1999
  • With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the pilot EP is developed. The power supply has a de source and a pulse one. The ratings of the dc and pulse source are 60kV and 70kV respectively.

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A Study On PIN Pulse Pattern Optimization In The Space Vector Notation Using Pulse Frequency Modulation (펄스 주파수 변조 방법을 이용한 공간 벡터 PWM 펄스 패턴최적화 기법에 관한 연구)

  • Jeon, Hi-Jong;Son, Jin-Geun;Kim, Dong-Joon;Lee, Suck-Tae;Choi, Woo-Jin
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.307-312
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    • 1994
  • In this investigation the PFM(Pulse Frequency Modulation} will be used for optimizing PWM inverter pulse pattern. In traditional the pulse frequency of PWM is kept const. But modulated PWM's frequency in this study, the sinusoidal inverter's performance should be improved. The PWM pulsepatterns are definitely controlled so that the time-integral function of the voltage vectors in the space vector notation may show a circular locus. Further, performance index will be minimized because of minimizing distortion of output current. Finally, we will implement itusingsingle-chip microprocessor.

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고밀도 플라즈마를 이용한 스퍼터링 기술 연구

  • Kim, Jong-Guk;Lee, Seung-Hun;Kim, Do-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.144-144
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    • 2012
  • 스퍼터링 기술은 타겟 사용 효율 및 증착률 향상 개념에서의 소스 특성향상과, 증착 기판으로 이동하는 스퍼터링 입자량 및 이온화율 제어를 통한 코팅 박막의 특성향상 등 크게 두 축을 중심으로 발전되어 왔다. 특히 소스 특성 향상 관점에서 고진공에서의 스퍼터링 기술, 듀얼 마그네크론 스퍼터링 및 무빙 마그네트론 스퍼터링 기술 및 원통형 스퍼터링 기술이 개발되어왔으며, 코팅 박막의 특성 향상과 관련하여서는 스퍼터링 방전 내 플라즈마의 밀도의 증대 및 기판 입사 입자의 에너지 제어를 통한 박막의 치밀도 향상 연구가 많이 이루어져, UBM 또는 ICP 결합 스퍼터링 및 Arc-스퍼터링 혼합공정이 연구되어 왔다. 박막 증착에서 박막의 물성을 조절하는 주요인자는, 기판에 입사하는 입자의 에너지로, 그 조절 범위가 좁고 넓음에 따라 활용 가능한 코팅 공정의 window가 설정된다. 지난 15년간 증착박막의 물성 향상을 위하여 스퍼터링 소스의 제어 관점이 아닌 전원적 관점에서 스퍼터된 입자의 에너지 제어를 MF(kHz), Pulse 전원 사용을 통해 이루어져 왔고, 특히 High Impulse Pulse를 이용한 HiPIMS 기법이 연구개발과 시장의 이해가 잘 어울려져 많은 발전을 이루고 있다. HiPIMS 공정은 박막의 물성을 제어하는 관점을 스퍼터링에 사용되는 보조 가스인 Ar 이온에 의존하지 않고, 직접 스퍼터된 입자의 이온화를 증대시키고, 이 이온화된 입자를 활용하여 증착 박막의 치밀성 및 반응성을 증대시켜, 박막특성을 제어하는 기술이다. HiPIMS의 경우, 초기 개발 당시에는 고에너지, 고이온화의 금속 이온을 대량 생성할 수 있다는 이론적 배경에서 연구되었다. 그러나 연구 개발이 진행되면서, 박막의 물성과 증착률 등 상반된 특성이 나타나면서 이에 대한 전원장치의 개량이나 스퍼터링 소스의 개선 등 다양한 개발 연구들이 요구되고 있다. 재료연구소에서는 스퍼터링 기술에서 가장 문제가 되고 있는 타겟 사용효율화 관점 및 스퍼트된 입자의 이온화률 증대에 대한 두 가지 문제를 동시에 해결할 수 있는 방안으로 고밀도 플라즈마를 이용한 스퍼터링 기술을 개발하고 있다. 본 발표에서는 이러한 HiPIMS의 연구 개발 동향과 고밀도 플라즈마를 이용한 스퍼터링 기술에 대한 연구 동향을 발표하고자 한다.

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