• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.352-356
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• 1995

Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

• E2M - 전기 전자와 첨단 소재
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• 제13권3호
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• pp.1-8
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• 2000

• 한국진공학회지
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• 제9권4호
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• pp.406-410
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• 2000

Hot-wall epitaxy 방법으로 GaAs (100) 기판 위에 9 $\mu\textrm{m}$의 CdTe (111)을 완충층으로 성장하고 그 위에 in-situ로 $Hg_{1-x}Cd_x$/Te (MCT)박막을 성장하였다. 성장된 MCT박막의 2결정 x-선 요동곡선의 반치폭 값은 125 arcsec이었으며 표면 형상의 roughness는 10 nm의 작고 깨끗한 면을 나타내었다. 성장된 MCT 박막에 대한 광전류 측정으로부터 최대 peak 파장과 cut off 파장은 각각 1.1050 $\mu\textrm{m}$ (1.1220 eV)와 1.2632 $\mu\textrm{m}$ (0.9815 eV)임을 알았다 이 peak 파장은 광전도체의 intrinsic transition에 기인한 band gap에 대응하는 봉우리이다. 이로부터 MCT 박막은 1.0 $\mu\textrm{m}$에서 1.6 $\mu\textrm{m}$의 근적외선 파장 영역을 감지할 수 있는 광전도체용 검출기로 쓰일 수 있음을 알았다.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1280-1282
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• 1994

The method of passivation for protecting the $Hg_{l-x}Cd_xTe$ surface is important device fabrication process, because the surface components are highly reactive leading to its chemical and electrical instability. Especially, the material of which composition is x=0.2 or 0.3, is narrow bandgap semiconductor and used as detector of infrared radiation. The device performance of narrow bandgap semiconductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{l-x}Cd_xTe$ allows rigorous control of the surface chemistry and provides an in-situ monitor of surface reaction. So electro-chemical reduction at specific potential can selectively eliminate the undesirable species on the surface and manipulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality or chemically treated $Hg_{l-x}Cd_xTe$ good surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.247-247
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• 2010

CdTe는 최근 적외선 검출기 개발에 응용하기 위해 활발한 연구가 진행 중인데 이는 HgCdTe(MCT)와 격자 불일치가 0.3% 이하로 대구경 단결정 MCT박막 제작이 용이하기 때문이다. 본 연구에서는 MBE 공정으로 GaAs 물질이 완충층으로 증착된 Si(100)기판을 사용하여 CdTe 물질과 Si기판간의 격자 불일치를 줄여 대면적 CdTe 단결정 박막을 얻고자 완충층의 두께별 결정성 및 표면 특성을 보았다. CdTe 박막의 증착은 Metal Organic Chemical Vapor Deposition system (MOCVD)를 이용하였고 실험결과 2nm의 GaAs 완충층이 사용된 박막에서 단결정 CdTe(400) 박막이 성장 되었으며, GaAs 완충층의 두께가 증가 함에 따라 $1{\mu}m$ 완충층에서는 다결정 박막이 성장 되었다. 본 연구결과는 Si 기판에 성장된 단결정 CdTe층을 이용 대면적 HgCdTe웨이퍼의 제조에 널리 이용 될 수 있으리라 여겨진다.

• E2M - 전기 전자와 첨단 소재
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• 제15권10호
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• pp.7-11
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
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• pp.122-123
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• 1997

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.813-815
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• 1992

Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.

• 전자공학회논문지A
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• 제29A권10호
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• pp.42-48
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• 1992

RoA is an important figure of merits for estimating the performance of p-n junction infrared detectors. This paper presents the tunneling current contribution to RoA of $Hg_{1-x}Cd_{x}$Te n$^{+}$-p juction photodiodes. Then, a diffusion model, a thermal generation-recombination model, an indirect tunneling model via trap, and a band-to-band direct tunneling model are considered to calculate RoA. Using these models, RoA depending on temperature, doping concentration, and mole fraction is calculated. Also from these results, under various operating conditions the dominant dark current mechanisms cna be understood.