• Mass Spectrometry Letters
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• v.5 no.4
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• pp.120-123
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• 2014

The interference of water vapor on the chemical ionization (CI) of hydroxyl radicals (OH) by sulfur hexafluoride ion ($SF_6{^-}$) was investigated using a flow tube system coupled to a high-pressure CI mass spectrometer. Water vapor, which is required to study heterogeneous reactions of OH under real tropospheric conditions, transforms the reagent ion $SF_6{^-}$ into $SF_4O^-$ and $F^-(HF)_n$, resulting in a substantial loss in CI sensitivity. Therefore, under humid conditions, peaks corresponding to OH are drastically diminished, while those corresponding to OH-water complex ions ($[OH(H_2O)_n]^-$) are enhanced. $[OH(H_2O)_3]^-$ was observed as the major OH species. The obsercation of $[OH(H_2O)_n]^-$ by isolating humid conditions to the CI region and preliminary ab initio calculations suggested that $[OH(H_2O)_n]^-$ ions were produced from reactions between OH ions ($OH^-$) and water molecules. An additional helium buffer flow introduced into the CI region reduced loss of the reagent ion and resulted in a partial recovery of OH peak intensities under humid conditions.

• Proceedings of the Korean Biophysical Society Conference
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• 2003.06a
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• pp.74-74
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• 2003

We report here the results on N-acetyl-N'-methylamide of oxazolidine (Ac-Oxa-NHMe) calculated using the ab initio molecular orbital method with the self-consistent reaction field (SCRF) theory at the HF level of theory with the 6-3l+G(d) basis set. The displacement of the $\square$-CH$_2$ group in proline ring by oxygen atom has affected the structure of proline, cis$\^$∼/ trans equilibrium, and rotational barrier. The up-puckered structure is found to be prevalent for the trans conformers of the Oxa amide. The higher cis populations of the Oxa amide can be interpreted due to the longer distance between the acetyl methyl group and the 5-methylene group of the ring for the trans conformer of the Oxa amide than that of the Pro amide. The changes in charge of the prolyl nitrogen and the decrease in electron overlap of the C$\^$∼/ N bond for TS structures seem to play a role in lowering rotational barriers of the Oxa amide compared to that of the Pro amide. The calculated preferences for cis conformers in the order of Oxa > Pro amides and for trans-to-cis rotational barriers in the order of Pro > Oxa amide in water are consistent with experimental results on Oxa-containing peptides. The pertinent distance between the prolyl nitrogen and the N$\^$∼/ H amide group to form a hydrogen bond might indicate that this intramolecular hydrogen bond could contribute in stabilizing the TS structures of Oxa and Pro amides and play a role in prolyl isomerization.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.513-519
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• 2006

We developed two kinds of the microchip for application to electrophoresis based on both glass and quartz employing the MEMS fabrications. The poly-Si layer deposited onto the bonding interface apart from channel regions can play a role as the optical slit cutting off the stray light in order to concentrate the UV ray, from which it is possible to improve the signal-to-noise (S/N) ratio of the detection on a chip. In the glass chip, the deposited poly-Si layer had an important function of the etch mask and provided the bonding surface properly enabling the anodic bonding. The glass wafer including more impurities than quartz one results in the higher surface roughness of the channel wall, which affects subsequently on the microflow behavior of the sample solutions. In order to solve this problem, we prepared here the mixed etchant consisting HF and $NH_4F$ solutions, by which the surface roughness was reduced. Both the shape and the dimension of each channel were observed, and the electroosmotic flow velocities were measured as 0.5 mm/s for quartz and 0.36 mm/s for glass channel by implementing the microchip electrophoresis. Applying the optical slit with poly-Si layer provides that the S/N ratio of the peak is increased as ca. 2 times for quartz chip and ca. 3 times for glass chip. The maximum UV absorbance is also enhanced with ca. 1.6 and 1.7 times, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Korean Journal of Materials Research
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• v.22 no.5
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• pp.243-248
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• 2012

ZrN nanoparticles were prepared by an exothermic reduction of $ZrCl_4$ with $NaN_3$ in the presence of NaCl flux in a nitrogen atmosphere. Using a solid-state combustion approach, we have demonstrated that the zirconium nitride nanoparticles synthesis process can be completed in only several minutes compared with a few hours for previous synthesis approaches. The chemistry of the combustion process is not complex and is based on a metathesis reaction between $ZrCl_4$ and $NaN_3$. Because of the low melting and boiling points of the raw materials it was possible to synthesize the ZrN phase at low combustion temperatures. It was shown that the combustion temperature and the size of the particles can be readily controlled by tuning the concentration of the NaCl flux. The results show that an increase in the NaCl concentration (from 2 to 13 M) results in a temperature decrease from 1280 to $750^{\circ}C$. ZrN nanoparticles have a high surface area (50-70 $m^2/g$), narrow pore size distribution, and nano-particle size between 10 and 30 nm. The activation energy, which can be extracted from the experimental combustion temperature data, is: E = 20 kcal/mol. The method reported here is self-sustaining, rapid, and can be scaled up for a large scale production of a transition metal nitride nanoparticle system (TiN, TaN, HfN, etc.) with suitable halide salts and alkali metal azide.

• Journal of the Korean Society of Food Science and Nutrition
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• v.38 no.9
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• pp.1161-1166
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• 2009

The purpose of the present study was to effect of red pepper seeds powder on antioxidative defense system and oxidative damage in rats fed high fat high cholesterol diet. Rats were divided into five experimental groups which are composed of normal diet group, high fat high cholesterol diet group, high fat high cholesterol diet with 5% red pepper seeds powder supplemented group (SA group), high fat high cholesterol diet with 10% red pepper seeds powder supplemented group (SB group), and high fat.high cholesterol diet with 15% red pepper seeds powder supplemented group (SC group). Supplementation of red seed pepper groups (SA, SB, and SC groups) resulted in increased activities of hepatic glutathione peroxidase and superoxide dismutase. However, there was no significant difference in the activity of hepatic catalase among all experimental groups. Hepatic superoxide radical contents in microsome and mitochondria were significantly reduced in red pepper seeds powder supplemented groups. Hepatic hydrogen peroxide contents in mitochondria were significantly reduced 15% red pepper seeds powder supplemented group. Hepatic carbonyl values in microsome were significantly reduced in 10% and 15% red pepper seeds powder supplemented groups. Thiobarbituric acid reaction substance (TBARS) values in liver and plasma were reduced in red pepper seeds powder supplemented groups. These result suggest that red pepper seeds powder may reduce oxidative damage by the activation of antioxidative defense system in rats high fat.high cholesterol diets.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.615-624
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• 2017

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.

• Membrane Journal
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• v.21 no.1
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• pp.22-29
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• 2011

During the maintenance, repair and replacement process of circuit breaker, $SF_6$ reacted with input air in arc discharge, which led to the production of by-product gases (eg, $N_2$, $O_2$, $CF_4$, $SO_2$, $H_2O$, HF, $SOF_2$, $CuF_2$, $WO_3$). Among these various by-product gases, $N_2$, $O_2$, $CF_4$ is major component. Therefore, the effective separation process is necessary to recycle the $SF_6$ gas from the mixture gas containing $N_2$, $O_2$, $CF_4$. In this study, the membrane separation process was applied to recycle the $SF_6$ gas from the mixture gas containing $N_2$, $O_2$, $CF_4$. The concentration of $SF_6$ gas in gas produced from the electric power industry is over than 90 vol%. Therefore, we made the simulated gas containing $N_2$, $O_2$, $CF_4$, $SF_6$ which the concentration of $SF_6$ gas is minimum 90 vol%. From the results of membrane separation process of $SF_6$ gas from $N_2$, $O_2$, $CF_4$ $SF_6$ mixture gases, PSF membrane shown the highest recovery efficiency 92.7%, in $25^{\circ}C$ and 150 cc/min of retentate flow rate. On the other hand, PC membrane shown the highest recovery efficiency 74.8%, in $45^{\circ}C$ and 150 cc/min of retentate flow rate. Also, the highest rejection rate of $N_2$, $O_2$, $CF_4$ is 80, 74 and 58.9% seperately in the same operation condition of highest recovery efficiency. From the results, we supposed the membrane separation process as the effective $SF_6$ separation and recycle process from the mixture gas containing $N_2$, $O_2$, $CF_4$, $SF_6$.