• Korean Chemical Engineering Research
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• v.47 no.5
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• pp.608-614
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• 2009

In this work, ruthenium substituted SBA-15's(Ru-SBA15's) of various Si/Ru ratios were prepared using a non-ionic triblock copolymer surfactant, $EO_{20}PO_{70}EO_{20}$, as template. We investigated the nitrogen or oxygen adsorption/desorption behaviors of the Ru-SBA-15's for their future applications as catalysts or selective adsorbents, etc. The pore size of the Ru-SBA-15's was determined by both the Barrett-Joyner-Halenda(BJH)($D_{BJH}$) and the Broekhoff-de Boer analysis with a Frenkel-Halsey-Hill isotherm(BdB-FFF) method($D_{BdB-FHH}$). The $D_{BJH}$ and $D_{BdB-FHH}$ of the Ru-SBA-15 having 50/1 ratio of Si/Ru were 3.9 nm and 4.7 nm, respectively. The transmission electron microscope(TEM) image of the Ru-SBA 15 of the Si/Ru mole ratio of 50 showed that the pore size is 4.7 nm, which is consistent with the $N_2$ adsorption results with the BdB-FHH method. The surface area of pores form oxygen adsorption/desorption isotherm was higher than that from the nitrogen adsorption/desorption isotherm by the Brunauer-Emmett-Teller(BET) method, which were respectively $612.7m^2/g$, and $573.3m^2/g$. X-ray diffraction(XRD) patterns and TEM analyses showed that the mesoporous materials possess well-ordered hexagonal arrays.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.388.2-388.2
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• 2014

최근 그래핀 연구와 더불어 2차원 구조의 나노소재에 대한 관심이 급증하면서 육각형의 질화붕소(hexagonal boron nitride; h-BN) 박막(nanosheet) [1]이나 붕소 탄화질화물(boron caronitride; BCN) 박막 [2,3]와 같은 2차원 구조체에 대한 연구가 활발히 진행되고 있다. 그 중 BCN은 반금속(semimetal)인 흑연(graphite)과 절연체인 h-BN이 결합된 박막으로 원소의 구성 비율에 따라 전기적 특성을 제어할 수 있다는 장점이 있다. 따라서 다양한 나노소자로의 응용을 위한 연구가 활발히 진행되고 있다. 본 연구에서는 폴리스틸렌(polystyrene, PS)과 보레인 암모니아(borane ammonia)를 고체 소스로 이용하여 열화학기상증착법을 이용하여 BCN 박막를 SiO2 기판 위에 직접 합성하였다. SEM과 AFM 관측을 통해 합성된 BCN 박막을 확인하였으며, RMS roughness가 0.5~2.6 nm로 매우 낮은 것을 확인하였다. 합성과정에서 PS의 양을 조절하여 BCN 박막의 탄소의 밀도를 성공적으로 제어하였으며, 이에 따라 전기적인 특성이 제어되는 양상을 확인하였다. 또한 합성온도 변화에 따른 BCN 박막의 전기적인 특성이 제어되는 양상을 확인하였다. 추가적으로 같은 방법을 이용하여 BCN 박막을 Ni 위에서 합성하여 SiO2 기판위에 전사 하였다. 합성된 BCN 박막의 구조적 특징과 화학적 조성 및 결합 상태를 투과전자현미경(transmission electron microscopy), X-선 광전자 분광법(X-ray photoelectron spectroscopy)을 통해 조사하였다.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.229-237
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• 1998

We grew the hexagonal GaN films on (100) Si and (00.1) sapphire substrates in the temperature range of $300~730^{\circ}C$ by the direct reaction between thermally ionized N-source and thermally evaporated Ga-source. The GaN growth rates are increased at the initial stage of GaN formation and it was saturated to some values by the coalescence of each crystallites. The oxygen signal was observed in XPS spectra for all the GaN films grown in this work, especially low- temperature grown GaN film may due to incorporation of the residual oxygen in the growth chamber. The surface of low-temperature and shorter time grown films covered only Ga-droplets. however, with increasing the both substrate temperature and the growth time GaN is growth to crystallites. and coalescence to ring-type crystallites. With sufficient supply of N-source, they were changed to platelets. In the PL spectrum measured at 20 K, we observed the impurity related emission at 3.32eV and 3.38eV.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.298-304
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• 2007

We have studied the effect of $N_2$ flow rate on the structural and optical properties of GaN nanorods grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shape nanorods with lateral diameters from 80 to 190 nm with increasing $N_2$ flow rate from 1.1 to 2.0 sccm are obtained. However, the ratio of length (thickness) and compact region increases with increasing $N_2$ flow rate up to 1.7 sccm and then saturate. From the photoluminescence, free exciton transition is clearly observed for GaN nanorods with low $N_2$ flow rate. And the PL peak energies are blue-shifted with decreasing diameter of the GaN nanorods due to size effect. Temperature-dependent photoluminescence spectra for the nanorods with $N_2$ flow rate of 1.7 sccm show an abnormal behavior like "S-shape" with increasing temperature.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.323-330
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• 1998

Mixed oxide compounds of potential usefulness for fibre coatings (hexagonal celsian, $BaAl_2Si_2O_8$ and lanthanum hexaluminate, $LaAl_{11}O_{18}$) or for matrix materials (yttrium aluminium garnet, $Y_3Al_5O_{12}$) were prepared by hybrid sol-gel synthesis and their thermal crystallisation was monitored by thermal analysis, X-ray diffraction and multinuclear solid state MAS NMR. All the gels convert to the crystalline phase below about $12200^{\circ}C$, via amorphous intermediates in which the Al shows and NMR resonance at 36-38 ppm sometimes ascribed to Al in 5-fold coordination. Additional information about the structural changes during thermal treatment was provided by $^{29}Si$, $^{137}Ba$ and $^{89}Y$ MAS NMR spectroscopy, showing that the feldspar framework of celsian begins to be established by about $500^{\circ}C$ but the Ba is still moving into its polyhedral lattice sites about $400^{\circ}C$ after the sluggish onset of crystallization. Lanthanum hexaluminate and YAG crystallise sharply at 1230 and $930^{\circ}C$ respectively, the former via $\gamma-Al_2O_3$, the latter via $YAlO_3$. Yttrium moves into the garnet lattice sites less than $100^{\circ}C$ after crystallisation.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.98-103
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• 1998

The crystal structure of dehydrated $Rb^+$-exchanged zeolite X, stoichiometry $Rb_{71}Na_{21}-X\; (Rb_{71}Na_{21}Si_{100}Al_{92}O_{384})$ per unit cell, has been determined from single-crystal X-ray diffraction date gathered by counter methods. The structure was solved and refined in the cubic space group Fd3, a=25.007(3) Å at 21(1) ℃. The crystal was prepared by ion exchange in a flowing stream using a 0.05 M aqueous RbOH solution (pH=12.7). The crystal was then dehydrated at 360 ℃ and $2{\times}10^{-6}$ torr for two days. The structure was refined to the final error indices, $R_1=0.047$ and $R_2=0.040$ with 239 reflections for which I> 3σ(I). In this structure, 71 $Rb^+$ ions per unit cell are found at six different crystallographic sites and 21 $Na^+$ ions per unit cell are found at two different crystallographic sites. Four and a half $Rb^+$ ions are located at site Ⅰ, the center of the hexagonal prism. Nine $Rb^+$ ions are found at site Ⅰ' in the sodalite cavity (Rb-O=2.910(15) Å and O-Rb-O=78.1(4)°). Eighteen $Rb^+$ ions are found at site Ⅱ in the supercage (Rb-O=2.789(9) Å and O-Rb-O=92.1(4)°). Two and a half $Rb^+$ ions, which lie at site Ⅱ', are recessed ca. 2.07 Å into the sodalite cavity from their three O(2) oxygen planes (Rb-O=3.105(37) Å and O-Rb-O=80.6(5)°). Thirty-two $Rb^+$ ions are found at site Ⅲ deep in the supercage (Rb-O=2.918(12) Å and O-Rb-O=71.9(4)°), and five $Rb^+$ ions are found at site Ⅲ'. Seven $Na^+$ ions also lie at site Ⅰ. Fourteen $Na^+$ ions are found at site Ⅱ in the supercage (Na-O=2.350(19) Å and O-Na-O=117.5(6)°).

• Korean Journal of Soil Science and Fertilizer
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• v.32 no.4
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• pp.421-428
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• 1999

Potassium (K) released from weathering of biotite in soils has been recognized as one of major K-sources for plant growth. Sand size biotite in a soil-saprolite-parent rock profile developed under temperate climate was studied in terms of morphological, mineralogical, and chemical changes according to depth employing petrographic and electron microscopes. X-ray diffraction, and electron microprobe. Biotite showed discoloring from black to goldish white and loss paleochroism with decreasing depth. Both edge and layer weatherings of biotite showed in this study. Hexagonal holes and cracks on (001) plane of weathered biotite grains were observed and their members increased with increasing weathering degree. Biotite was altered to kaolinite with or without intermidiate products such as hydrobiotite, degraded biotite, and illite. Average chemical composition of weathered biotite changed to that of katolinite with decreasing depth: increasing concentrations of silicon (Si) and aluminum (Al) and decreasing concentrations of potassium (K), iron (Fe), magnesium (Mg), manganese (Mn), and taitanium (Ti).

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.129-133
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• 2000

Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.252-252
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• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.