• 한국산학기술학회논문지
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• 제20권8호
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• pp.649-656
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• 2019

조선소, 교량 구조물, 건설기계, 플랜트 산업 등 다양한 분야에서 폭 넓게 활용되고 있는 이산화탄소 아크용접(FCAW: Flux Cored Arc Welding)은 피복 아크 용접(SMAW: Shielded Metal Arc Welding)의 단점을 보완하기 위한 대안으로 1950년대 초 개발되었다. FCAW는 모든 자세에서 용접이 가능하고 작업여건 변수가 많은 현장에서 우수한 품질을 얻을 수 있는 장점이 있어 탄소강과 합금강의 중판, 후판 용접에 많이 사용되고 있다. 본 연구에서는 FCAW를 이용하여 SS400(일반구조용 압연강재)와 SM490A(용접구조용 압연강재)를 이종용접한 후 용접부의 기계적 특성(인장시험, 굽힘시험, 경도시험, 충격시험, 매크로시험)을 분석하고 다음과 같은 결론을 도출하였다. 인장시험 결과, 모든 용접자세에서 KS 규격 인장강도 범위($400{\sim}510N/mm^2$)를 만족하였다. 굽힘시험 결과, 대부분의 시편에서 굽힘시 표면의 터짐 현상이나 기타 결점이 나타나지 않았고, 소성변형 후에도 충분한 인성을 발휘하는 것을 확인할 수 있었다. 경도시험 결과, 모든 결과 값이 KS B 0893의 규격치 350Hv보다 낮게 나타나 양호한 것으로 판단된다. 충격시험 결과, 모든 결과가 KS 기준 수치인 27J 보다 큰 것으로 나타났다. 매크로시험 결과 용접부의 형상별로 균일한 조직 상태를 나타냈으며, 용접부 전단면에 걸쳐 내부 결함, 기포 또는 불순물 등이 발견되지 않아 라미네이션의 우려가 없는 것으로 나타났다.

• Journal of Electrochemical Science and Technology
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• 제9권4호
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• pp.282-291
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• 2018

The pristine fluorine-doped $SnO_2$ (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide ($CuWO_4$) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at $500^{\circ}C$ for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and $CuWO_4$-decorated FTO (briefly denoted as $FTO/CuWO_4$) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the $CuWO_4$ was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the $CuWO_4$ formed during 4 cycles (abbreviated as $CuWO_4$(4 cycles)) on FTO IO film exhibited partial distribution of $CuWO_4$ nanoparticles. Additional distribution of $CuWO_4$ nanoparticles was observed in the case of $FTO/CuWO_4$(8 cycles) IO film. The $CuWO_4$ layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M $Na_2SO_4$ solution under solar illumination, suggesting that the $FTO/CuWO_4$(4 cycles) IO films exhibit a photocurrent density ($J_{sc}$) of $0.42mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE, denoted as $V_{RHE}$), while the FTO IO and $FTO/CuWO_4$(8 cycles) IO films exhibited a $J_{sc}$ of 0.14 and $0.24mA/cm^2$ at $1.23V_{RHE}$, respectively. This difference can be explained by the increased visible light absorption by the $CuWO_4$ layer and the favorable charge separation/transfer event in the cascading band alignment between FTO and $CuWO_4$ layer, enhancing the overall PEC performance.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• 마이크로전자및패키징학회지
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• 제30권4호
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• pp.44-49
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• 2023

탄소중립을 위한 세계적인 노력 속에서 전기자동차의 사용이 급속하게 증가함에 따라 배터리에 대한 수요도 증가하고 있다. 따라서, 전기자동차의 높은 효율을 달성하기 위해 차체 무게 감소와 배터리에 대한 고려가 중요한 요소로 부각되고 있다. 경량 소재로 알려진 구리와 알루미늄은 레이저 용접을 통해 효과적으로 접합될 수 있다. 그러나 두 소재의 물리적 특성이 서로 다르기 때문에 이를 접합하는 것은 여전히 기술적인 어려움이 존재한다. 본 연구에서는 구리와 알루미늄을 레이저 용접으로 접합하기 위한 최적의 레이저 파라미터를 찾기 위해 시뮬레이션을 수행하였다. 또한, 결과를 시각적으로 제시하기 위해서 Python 언어를 활용하여 GUI(Graphic User Interface) 프로그램을 개발하였다. 이 프로그램은 기계 학습 이미지 데이터를 활용하여 접합 성공을 예측하며, 안전하고 효율적인 레이저 용접 가이드로 활용될 것으로 예상되어, 전기차 배터리 조립 공정의 안전성과 효율성에 기여할 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.388-388
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• 2016

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated with cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature $T_s$, and substrate dc bias $V_s$ as variables for efficient PEDOT:PSS/crystalline (c-)Si heterojunction solar cells (Fig. 1). The high-speed camera and differential mobility analysis characterizations revealed that average size and flux of PEDOT:PSS mist depend on f, solvent, and $V_s$. The size distribution of mist particles including EG/DI water cosolvent is also shown at three different $V_s$ of 0, 1.5, and 5 kV for a f of 3 MHz (Fig. 2). The size distribution of EG/DI water mist without PEDOT:PSS is also shown at the bottom. A peak maximum shifted from 300-350 to 20-30 nm with a narrow band width of ~150 nm for PEDOT:PSS solution, whose maximum number density increased significantly up to 8000/cc with increasing $V_s$. On the other hand, for EG/water cosolvent mist alone, the peak maximum was observed at a 72.3 nm with a number density of ~700/cc and a band width of ~160 nm and it decreased markedly with increasing $V_s$. These findings were not observed for PEDOT:PSS/EG/DI water mist. In addition, the Mie scattering image of PEDOT:PSS mist under white bias light was not observed at $V_s$ above 5 kV, because the average size of mist became smaller. These results imply that most of solvent is solvated in PEDOT:PSS molecule and/or solvent is vaporized. Thus, higher f and $V_s$ generate preferentially fine mist particle with a narrower band width. Film deposition occurred when $V_s$ was impressed on positive to a c-Si substrate at a Ts of $30-40^{\circ}C$, whereas no deposition of films occurred on negative, implying that negatively charged mist mainly provide the film deposition. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrate by adjusting $T_s$ and $V_s$. The adhesion of CMD PEDOT:PSS to c-Si enhanced by $V_s$ conspicuously compared to that of spin-coated film. The CMD PEDOT:PSS/c-Si solar cell devices on textured c-Si(100) exhibited a ${\eta}$ of 11.0% with the better uniformity of the solar cell parameters. Furthermore, ${\eta}$ increased to 12.5% with a $J_{sc}$ of $35.6mA/cm^2$, a $V_{oc}$ of 0.53 V, and a FF of 0.67 with an antireflection (AR) coating layer of 20-nm-thick CMD molybdenum oxide $MoO_x$ (n= 2.1) using negatively charged mist of 0.1 wt% 12 Molybdo (VI) phosphoric acid n-Hydrate) $H_3(PMo_{12}O_40){\cdot}nH_2O$ in methanol. CMD. These findings suggest that the CMD with negatively charged mist has a great potential for the uniform deposition of organic and inorganic on textured c-Si substrate by adjusting $T_s$ and $V_s$.