• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.56-59
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• 2004

HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.590-595
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• 2004

The shape and size variations of the nanopatterns produced on a positive photoresist using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture( $P_{in}$ ), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}$ =1.2$\mu$W and V=12$\mu$m/. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage using azopolymer is discussed at the end.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.89-92
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• 2011

Hydrogenated amorphous carbon (a-C:H) films were deposited by plasma enhanced chemical vapor deposition on silicon substrates. a-C:H thin film was irradiated to a typical He-Cd laser to study its emitting properties. The photoluminescence (PL) intensity during the irradiation achieved a maximum value when 2,000 seconds elapsed. Fourier transform infrared measurement revealed a-C:H thin film suffered transformation from a polymer-like to graphite-like phase during laser irradiation. Thermal annealing was done at various temperatures, ranging from room temperature to $400^{\circ}C$ in the atmosphere, to investigate structural changes in a-C:H film by heat generation during the emission. PL intensity of a-C:H thin film increased 1.5 times without apparent structural change, as annealing temperature increased up to $200^{\circ}C$. However, a-C:H film above $200^{\circ}C$ exhibited significant decrease of PL accompanying dehydrogenation. This led to a red shift of the PL peak.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.852-858
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• 2007

The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.164-164
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• 2003

UV 발광소자 재료로서 유망한 ZnO film을 ALE법으로 증착하고 photoluminescence특성을 조사하였다. Zn소스로서 DEZn(Diethylzinc)를, 산소 소스로서 DI water를 사용하였고 $N_2$ gas로서 챔버내에 주입된 소스물질을 purge하였다. ALE 공정온도 범위인 17$0^{\circ}C$와 CVD 반응온도 범위인 40$0^{\circ}C$로 ZnO 박막을 증착하고 이 시편을 산소 분위기에서 600-100$0^{\circ}C$의 온도로 1시간 동안 열처리하였다. 그리고 He-Cd laser를 사용하여 photoluminescence를 측정하였다. 17$0^{\circ}C$와 40$0^{\circ}C$ 에서 증착된 시편 모두 as-grown 상태에서는 거의 발광특성을 나타내지 못하였으나 후열처리를 거치면서 발광특성을 나타내었고 열처리 온도가 높을수록 발광강도가 증가하였다. 40$0^{\circ}C$에서의 증착된 시편의 경우는CVD반응이 발생하여 Zn-Zn결합이 많이 생성되어 열처리 온도가 증가하여도 발광강도가 약하였고 가시광 영역의 발광 또한 크게 증가하였으며 17$0^{\circ}C$에서 증착된 시편의 경우는 열처리 온도가 증가할수록 UV영역의 발광강도만이 크게 증가하였으며 가시광 영역의 발광은 거의 증가하지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.195-198
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• 2004

ZnO films were Prepared by ultrasonic spray Pyrolysis on MgO substrates. The surface morphology and crystallinity were observed as a function of substrate temperature by SEM and XRD, respectively. PL properties of the ZnO films were studied by using Cd-He laser. UV light around 3.37 eV was pronounced in the PL spectra. The origin of the PL peak was discussed.

• 한국진공학회지
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• 제13권3호
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• pp.103-108
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• 2004

Atomic Layer Epitaxy (ALE)법으로 Zn 소스인 DEZn와 oxygen 소스인 $H_2O$를 사용하여 (001) sapphire 기판 위에 기판온도를 ALE 공정온도 범위 인 $170^{\circ}C$와 CVD 공정온도범위 인 $400^{\circ}C$에서 ZnO 박막을 증착하였다. 후열처리에 따른 발광 특성을 조사하기 위해서 산소분위기에서 600∼$1000^{\circ}C$의 온도로 1 시간 동안 후열처리한 후에 He-Cd laser를 사용하여 Photoluminescence (PL) 특성을 측정하였다. $170^{\circ}C$와 $400^{\circ}C$에서 증착된 시편의 경우 모두 as-grown 상태에서는 거의 발광이 일어나지 않았으나 후열처리를 거치면서 발광이 일어났으며 열처리온도가 높을수록 발광강도는 증가하였다. $400^{\circ}C$에서의 증착된 시편의 경우는 CVD 반응이 일어나 Zn-Zn 결합이 많이 생성되어 열처리 온도가 증가하여도 발광강도가 약하였고 가시광 영역의 발광이 크게 증가한 반면 $170^{\circ}C$에서 증착된 시편의 경우는 열처리 온도가 증가할수록 UV영역의 발광강도만이 크게 증가하였으며 가시광 영역에서의 발광은 거의 증가하지 않았다.

• Journal of the Optical Society of Korea
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• 제9권1호
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• pp.16-21
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• 2005

Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

• 한국정밀공학회지
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• 제23권8호
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• pp.72-79
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• 2006

We measured grating pitch standards using optical diffractometry and analyzed measurement uncertainty. Grating pitch standards have been used widely as a magnification standard for a scanning electron microscope (SEM) and a scanning probe microscope (SPM). Thus, to establish the meter-traceability in nano-metrology using SPM and SEM, it is important to certify grating pitch standards accurately. The optical diffractometer consists of two laser sources, argon ion laser (488 nm) and He-Cd laser (325 nm), optics to make an incident beam, a precision rotary table and a quadrant photo-diode to detect the position of diffraction beam. The precision rotary table incorporates a calibrated angle encoder, enabling the precise and accurate measurement of diffraction angle. Applying the measured diffraction angle to the grating equation, the mean pitch of grating specimen can be obtained very accurately. The pitch and orthogonality of two-dimensional grating pitch standards were measured, and the measurement uncertainty was analyzed according to the Guide to the Expression of Uncertainty in Measurement. The expanded uncertainties (k = 2) in pitch measurement were less than 0.015 nm and 0.03 nm for the specimen with the nominal pitch of 300 nm and 1000 nm. In the case of orthogonality measurement, the expanded uncertainties were less than $0.006^{\circ}$. In the pitch measurement, the main uncertainty source was the variation of measured pitch values according to the diffraction order. The measurement results show that the optical diffractometry can be used as an effective calibration tool for grating pitch standards.