• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1058-1061
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• 2003

In this thesis, we observed the optical characteristic of amorphous chalcogenide thin films by He-Cd laser. Also, grating formation by He-Ne laser and He-Cd laser. After analyze diffraction efficiency of the time on the $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin films. The result diffraction efficiency of Maximun 0.2% reduced according to time grating formation by He-Ne laser. Diffraction efficiency of Maximun 0.1% showed stabiliy characteristic according to time grating formation by He-Cd laser.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.414-420
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• 2002

We realized optical logic gates using a bacteriorhodopsin (bR) doped polymer film. The bR undergoes a complex photocycle characterized by several spectroscopically distinct intermediate states. We realized optical logic gates using a He-Ne laser (632.8 nm) and a He-Cd laser (413 nm) that consider B-state and absorption change of M-state in the photocycle of bR. Also, we realized high speed AND logic gate using He-Ne laser (632.8 nm) and the second harmonics at 532 nm from a pulsed Nd-YAG laser that considering absorption spectrum between B-state and K-state.

• Laser Solutions
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• v.7 no.3
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• pp.37-46
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• 2004

The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.295-295
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• 2011

CIGS박막을 동시 증발법(co-evaporation)으로 몰리브덴이 증착된 소다라임 유리 위에 성장시켰다. CdS 박막은 화학적 용액 성장법 (chemical bath deposition: CBD)을 이용하여 약 60 nm를 증착하였다. 열처리는 가열판 (hot-plate)을 사용하여 공기중에서 하였다. 열처리 온도는 0~350$^{\circ}C$까지 변화하였으며, 열처리 시간은 각각 5분이었다. 시료의 표면 및 계면의 변화를 SEM측정을 통하여 관측하였다. CdS/CIGS 박막의 열처리 온도 변화에 따른 photoluminescence 특성을 조사하였다. 여기 레이저는 488 nm ($Ar^+$ laser)와 632.8 nm (He-Ne laser)를 사용하여 결함의 근원을 조사하였다. 온도 의존성 실험을 통하여 CIGS 박막의 띠 간격 에너지를 확인할 수 있었으며, 결함 준위의 활성화 에너지 및 특성을 알 수 있었다. $Ar^+$ laser에서만 관측되는 신호의 근원은 CdS에 기인한 것이었다.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.4 s.97
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• pp.19-25
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• 1999

This paper addresses a development work of a SLA apparatus on laboratory basis. The SLA test machine is composed of optical, movement, curing and control subsystems. Optical part is performed by a He-Cd laser with mirror combination and mechanical movement is achieved by X-Y table. The developed system is evaluated by several test runs, and shows a good precision capability in forming a basic part. The technique used in this work can be extended to replace the high technology transfer cost of commercial RP machine.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.286-291
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• 2000

$Cd_{1-x}Mn_{x}Te$ singe crystals were grown by the vertical Bridgman method and the Faraday rotations were measured as a function of wavelength and magnetic field. The Verdet constants were evaluated using the result of Faraday rotation. The Verdet constants were maximum at nearly absorption edge and increased for $0\leq x \leq 0.38 $ but decreased for x>0.40. We found that large Faraday rotation occur in $Cd_{0.62}Mn_{0.38}Te$ at nearly absorption edge wavelength was more useful for a magnetic field sensor than any other crystals, and $Cd_{0.60}Mn_{0.40}Te$ crystal was useful in this application when wavelength is He-Ne laser wavelength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.327-331
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• 2016

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.315-319
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• 2003

The quality, quantity, color, and characteristics were found out cultured seawater pearls and freshwater pearls. In the XRF measurement Ca chemical combinations were the main elements and Sr was detected at higher levels for the sea-water pearl and Si, S, Ca, Mn, P and other elements were found at higher levels for the fresh-water pearls. Such differences is judged to be caused by the ion diluted in sea and fresh water which affects the pearl elements. Although near similar structural peak was shown for the FT-IR measurement, the fresh-water pearl showed a lower peak for the 2344 wave. For the results of PL, the peak for fresh-water measured with Hd-Cd Laser at 455 nm was higher and with the Ar-ion Laser measurements, peaks were high at 545 nm and 570 nm for fresh-water pearl and sea-water pearls respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.21-26
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• 2004

Results from PL and Raman spectroscopic analyses of HPHT (high-pressure high-temperature) treated type IIa diamonds are presented, and these spectral characteristics are compared with those of untreated diamonds of similar color and type. We identify a number of significant changes by 325 nm He/Cd laser excitation. Several peaks are removed completely, including H4, H3 system in HPHT treated diamond. The N3 system, however, increased in emission. Also we can find the behaviour of the nitrogen-vacancy related center N-V centers at 575 and 637.1 nm, as observed with 514 nm Ar ion laser excitation. When these centers are present, the FWHM (full width at half maximum) of 637.1 nm luminescence intensities offers a potential means of separating HPHT-treated from untreated type IIa diamonds. The width of 637.1 nm $(N-V)^-$line measured at the position oi half the peak's height are determine to range from 19.8 to $32.1cm^{-1}$ for HPHT treated diamonds.