• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.2-314.2
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• 2014

To improve the optical and electrical properties of commercialized GaN-based light-emitting diodes (LEDs), many methods are suggested. In recent years, great efforts have been made to improve the internal quantum efficiency and light extraction efficiency (LEE) and promising approaches are suggested using a patterned sapphire substrate (PSS), V-pit embedded LED structures, and silica nanostructures. In this study, we report on the enhancement of photoluminescence (PL) intensity in GaN-based LED structures by using the combination of SiO2 (silica) nanospheres and polystyrene/SiO2 core-shell nanospheres. The SiO2 nanospheres-coated LED structure shows the slightly increased PL intensity. Moreover the polystyrene/SiO2 core-shell nanospheres-coated structure shows the more increase of PL intensity comparing to that of only SiO2 spheres-coated structure and the conventional structure without coating of nanospheres. The Finite-difference time-domain (FDTD) simulation results show corresponding result with experimentally observed results. The mechanism of enhancement of PL intensity using the coating of polystyrene/SiO2 core-shell nanospheres on LED surface can be explained by the improvement in extraction efficiency by both increasing the probability of light escape by reducing Fresnel reflection and by multiple scattering within the core-shell nanospheres.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.38-43
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• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.79-85
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• 1990

Monte Carlo simulation of hot-electron transport in $Al_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$ As modulation-doped structure has been performed in which the nonparabolicity in $\Gamma$ valley is taken into account. The calculated results show that the inclusion of the nonparabolicty effect results in a huge decrease in drift velocity.

• Macromolecular Research
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• v.17 no.7
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• pp.464-468
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• 2009

Gelatin nanoparticles derived from bovine or porcine have been developed as various types of drug delivery system, and they need to be cross-linked to maintain their physicochemical properties in aqueous environments. Although gelatin is a widely used material in pharmaceutical industries, the safety issue of animal-origin gelatins, such as transmissible mad cow disease and anaphylaxis, remains to be solved. The purpose of this study was to prepare type A gelatin (GA) nanoparticles by modified, two-step, desolvation method and compare the toxicity of the resulting GA nanoparticles with recombinant human gelatin (rHG) nanoparticles. The GA nanoparticles were characterized, and drug loading and release pattern were measured. FITC-BSA, a model protein, was efficiently loaded in the nanoparticles and then released in a biphasic and sustained release pattern without an initial burst. In particular, the cell viability of the GA nanoparticles was less than that of the rHG nanoparticles. This finding suggests that rHG nanoparticles should be considered as an alternative to animal-origin gelatin nanoparticles in order to minimize the safety problems.

• Proceedings of the KIPE Conference
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• 2019.11a
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• pp.82-84
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• 2019

본 논문에서는 Induction Heating(IH) 시스템에서 WBG 소자인 SiC MOSFET과 GaN Transistor의 Performance 비교를 통해서 소자의 적합성을 분석한다. SiC 및 GaN 소자를 직렬 공진형 컨버터로 구성된 IH 시스템에 적용하여 온도, 전압, 전류, Gate 저항 등을 고려한 도통 손실, 스위칭 손실, 역방향 도통 손실과 열 해석 프로그램을 통한 열 성능 등의 비교가 수행되며, 이를 통해 소자 적합성이 분석된다. 각 소자에 따른 IH 시스템에 대한 시뮬레이션을 수행하여, 이론적 손실 비교를 통한 소자 적합성 분석에 대한 타당성을 검증한다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.15-19
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• 1998

Structural and optical properties of $In_xGa_{1-X}N$ as well as $In_{0.1}Ga_{0.9}N$/GaN single quantum we11 (SQW) grown on sapphire (0001) substrate with an based GaN using rf-plasma assisted MBE have been investigated. The quality of the InXGal.,N fdm was improved as the growth temperature increased. In PL measurements at low temperatures, the band edge emission peaks of $In_xGa_{1-X}N$ was shifted to red region as an indium cell and substrate temperature increased. For $In_{0.1}Ga_{0.9}N$/GaN SQW, the optical emission energy has blue shift about 15meV in PL peak, due to the confined energy level in the well region. And, the FWHM of the $In_{0.1}Ga_{0.9}N$/GaN SQW was larger than that of the bulk Ino,la.9N films. The broadening of FWHM can be explained either as non-uniformity of Indium composition or the potential fluctuation in the well region. Photoconductivity (PC) decay measurement reveals that the optical transition lifetimes of the SQW measured gradually increased with temperatures.

• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.95-97
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• 2005

• Journal of the Korean Chemical Society
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• v.24 no.4
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• pp.302-309
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• 1980

The solubilities of n-propyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene have been measured at 19, 25 and $40^{\circ}C$ in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of n-propyl bromide in nitrobenzene is greater than in 1,2,4-trichlorobenzene, indicating a stronger interaction of n-propyl bromide with nitrobenzene than with 1,2,4-trichlorobenzene. In the presence of gallium bromide, 1: 1 complex $n-C_3H_7Br\cdotGaBr_3$ is formed in the solution. The instability constant K of the complex was evaluated. $$n-C_3H_7Br\cdotGaBr_3 \rightleftarrows n-C_3H_7Br ＋ \frac{1}{2Ga_2Br_6 }$$The change of enthalpy, free energy and entropy for the dissociation of the complex were also calculated. It seems that the stabilities of the complex, gallium bromide with alkyl bromide, are relatively concerned with the stabilities of the alkyl ion.

• Journal of the Korean Chemical Society
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• v.29 no.1
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• pp.9-14
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• 1985

The solubilities of i-propyl bromide in nitrobenzene have been measured at 10$^{\circ}$, 19$^{\circ}$ and 25$^{\circ}C$ in the presence and absence of gallium bromide. In the presence of gallium bromide, 1 : 1 complex, i-C$_3$H$_7Br{\cdot}GaBr_3$ is formed in the solution. The instability constant K of the complex formation was evaluated from the following equilibrium equation: i-C$_3$H$_7Br{\cdot}GaBr_3$ ${\rightleftharpoons}$ i-C$_3$H$_7$Br + $\frac{1}{2}$$Ga_2Br_6$. The change of enthalpy, free energy and entropy for the dissociation of the complex were also calculated. From these result, it seems that the stabilities of the complex formation, gallium bromide with alkyl bromide, are directly related with those of the carbonium ions of alkyl bromide.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.105-109
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• 1998

Langasite({{{{ { La}_{ 3} {Ga }_{5 } {SiO }_{14 } , LGS}}}}) powder was prepared by a polymerized complex method based on the Pechini-type reaction. A mixed solution of ethylene glycol(EG), cotric acid(CA), lanthanum, gallium and silicon ions, with a molar ratio of EG:CA:La:Ga:Si=100:25:3:5:1, was polymerzed to from a transparent resin, which was used as a precursor for the synthesis of LGS. X-ray diffraction(XRD) patterns indicated that the LGS phase could be formed by the heat-treatment in air at 1000$^{\circ}C$ for 3hrs