• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.317-317
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.33-33
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• 2004

• 전기의세계
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• v.29 no.8
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• pp.491-494
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• 1980

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.241-242
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• 2004

• Journal of Magnetics
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• v.11 no.1
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• pp.1-4
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• 2006

We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of $0.052\;\omega{cm}$, a high carrier concentration of $6.2X10^{19}\;cm^{-3}$ and a Hall mobility of $1.8\;cm^2/Vs$. We also observed a clear decrease of the resistivity in samples after low temperature annealing.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.262-266
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• 2001

We have presented the electrical properties of the quantum wire fabricated by split gate on GaAs/AlGaAs heterostructures by using the Shubnikov de Haas oscillation and quantum Hall effect measurements. We observed the 1D properties of the sample as increasing gate voltage. The misfit between quantum Hall plateau and minima in Shubnikov do Haas oscillations are interpreted as Landauer-B$"{u}$ tikker formula based on the edge state transport.port.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.268-277
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• 1994

Current sensor using Hall device is an instrument of detecting a current by Hall effect. The existing current sensor is ordinarily worked by concentrating electromagnetism produced around the conducting wire turned iron core. The tiny curren, however, could not be accurately detected by the instrument owing to influence of residual magnetism exisisting in iron core, and the result of detecting is also somewhat on the large side. kAccordingly, We fabricated a new type of instrument minimizing the influence of residual magnetism existing in iron core and detected the tiny DC current accurately by taking advantage of magnetic modulation. The range of measuring DC current is 0[mA]-100[mA] and the maxiumm Linerity tolleance by the result of detecting current, can be reduced less than 3 percent.

• Journal of architectural history
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• v.27 no.2
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• pp.7-16
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• 2018

The purpose of this study is to estimate the dimensions of the Protruding distance of Seven-layered Gongpo of Baoguosi Temple Main Hall in Ningbo, China, and to analyze the meaning of the dimension through the "Yingzaofashi(營造法式)" and other similar cases. Through this study, it is clarified that the "Yingzaofashi" stipulates the limited use of the structural role of Ha-ang, but Baoguosi Temple Main Hall has expanded the structural role of Ha-ang actively by increasing the total Protruding Distance and effectively controlling the Protruding Distance of the layer where Ha-ang is placed. And as a result, the effect of lowering the total height of the protruding part was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.157-158
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• 2006

$CdS_{0.69}Se_{0.31}$ single crystal grown by sublimation method. Hall effect measurement were carried out by the Van der Pauw method. The measurement values under the temperature were found to be carrier density $n\;=\;1.95\;{\times}\;10^{23}m^3$, Hall coefcient $RH\;=\;-3.21\;{\times}\;10^{-5}m^3/c$, conductivity ${\sigma}\;=\;362.41\;{\Omega}^{-1}m^{-1}$, and Hall mobility ${\mu}\;=\;1.16\;{\times}\;10^{-2}m^2/v.s$.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.86.3-86
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• 2001

Hall effect sensor using 7um, 1.7 ohm-cm or 10um, 3.5 ohm-cm Bipolar process was successfully developed. The Hall sensor consists of various patterns, such as regular shapes, rectangles, diamond, hexagon and cross shapes to optimize offset voltage and sensitivity for proper applications. In order to measure offset voltage in chip scale the Agilent company´s 4156C and Nano-Voltage Meter were used and the best structure in offset voltage was finally selected by using ceramic package. The patterns appear to be the quadri-rectangular patterns entirely and three-parallelogram patterns. The measured offset voltages were found to be about 173-365uV. Meanwhile, in ...