Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth and Characteristics for $CdS_{0.69}Se_{0.31}$ single crystal by sublimation method

승화법에 의한 $CdS_{0.69}Se_{0.31}$ 단결정 성장과 특성

  • 홍광준 (조선대학교 자연학대학 물리학과) ;
  • 유상하 (조선대학교 자연학대학 물리학과) ;
  • 김장복 (조선대학교 자연학대학 물리학과)
  • Published : 2006.06.22
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Abstract

$CdS_{0.69}Se_{0.31}$ single crystal grown by sublimation method. Hall effect measurement were carried out by the Van der Pauw method. The measurement values under the temperature were found to be carrier density $n\;=\;1.95\;{\times}\;10^{23}m^3$, Hall coefcient $RH\;=\;-3.21\;{\times}\;10^{-5}m^3/c$, conductivity ${\sigma}\;=\;362.41\;{\Omega}^{-1}m^{-1}$, and Hall mobility ${\mu}\;=\;1.16\;{\times}\;10^{-2}m^2/v.s$.

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