• Korean Journal of Heritage: History & Science
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• v.43 no.2
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• pp.40-59
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• 2010

Anssolim is the unique technique which standing columns lean in a inward direction of buildings in traditional architecture, which has not been thoroughly investigated to this day. With a dearth of previous studies, the anssolim technique can only be examined through detailed three-dimensional surveys. The main halls of Korean palaces can be seen as buildings that were built with the regulations of the day in mind, making them excellent research subjects when studying the anssolim technique. The findings can be summarized as follows. 1. In the main halls that were studied, anssolim was applied most to main space (eokan) columns, then lessened for peripheral columns. 2. The largest second-floor cheoma columns were placed inward in the eokan, then became smaller as with the peripheral columns. In the case of the eokan, the columns were arranged according to the size of the anssolim. 3. The second-floor cheoma column anssolim in the middle-floor main hall were generally a third or a quarter of the size of those on the first floor. As on the first floor, the largest anssolim were applied to the eokan columns, then became gradually smaller towards the periphery columns. 4. In the palace main halls, the largest anssolim were used for the eokan columns, and became smaller with the peripheral columns. This unique structure can be seen to be a Korean technique that deviates from the Chinese "Yingzaofashi(營造法式)" techniques. Although this study is limited in that it only studies the main hall of Korean palaces, it is significant in that it shed new light on the technological implications of the anssolim technique, and can be used as important data for research into the history of technology. Although this type of data is difficult to extrapolate, it has been made as accurate as possible by minimizing the margin of error in the data for the palaces that were actually studied.

• Journal of architectural history
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• v.25 no.5
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• pp.15-25
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• 2016

The color that painted on the ground of Dancheong becomes Gachil(basecoat)-Dancheong and underpainting of Moro-Dancheong or Geum-Dancheong. So, the color of underpainting is the most important element that determines impression of the building. Thus, the architecture after using "Sangrokhadan" has different characters from what it had been. In the existing perception toward the background color of Dancheong, it was considered the characters of Korean Dancheong so-called "Sangrokhadan" that paint vertical elements like columns red and upper part of the columns green. But this study examined the color of Dancheong according to the era and region before and after Goryeo Dynasty era, then it reveals that Sangrokhadan technique was applied from the 14th century in the late Goryeo Dynasty. One of the Goryeo architecture, Geungnakjeon Hall of Bongjeongsa Temple is thought to be a previous style that is not applied "Sangrokhadan" technique because old elements are painted red pigment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.142-148
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• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• Journal of architectural history
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• v.16 no.3
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• pp.57-74
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• 2007

Jeoksimto which was build up as the reinforcement establishment made with the soil under the cornerstone in the site of tile-capped building is the representative construction technique which become popular in the Sabi capital era after the Wungjin capital era. Especially from the fact that no site of tile-capped building with this Jeoksimto has been found in the Silla area, we can see the originality Baekje technique. We can analogize the specialization of Josagong (造寺工) (craftsman building the temple) and the diversity of technique, on the basis of the technique raising the ground level which is different with the middle gate site of Neung-sa and the Hall enshrining Buddha site in Buyeo. Moreover, we can have the confidence the dispatch of craftsman and the transmission of building technique from the Buyeo area to the Iksan area through the fact that the construction techniques of Jeoksimto in both area are almost the same. However the concerns in the construction archaeology are necessary because almost no study for Jeoksimto has been conducted and the term of Jeoksimto also is unfamiliar even if excavation of Baekje Jeoksimto in the several remains.

• Journal of applied mathematics & informatics
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• v.8 no.2
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• pp.641-649
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• 2001

A procedure of detecting change-points is considered with split linear fitting idea from Hall and Titterington(1992). At each given point, left, central and right linear fits are compared to detect the discontinuities or change-points. A simulation study is done with various types of change models and shows that the suggested technique can be a flexible data-analytic tool.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.111-116
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• 1994

본 연구는 CdS, CdSe 분말을 불순물, flux와 혼합하여 질소 분위기에서 소결한 후 전자빔으로 증착하여 적절한 조건에서 열처리 하였다, 이 박막의 결정구조를 X-ray 회절 실험을 통하여 조사하고 제작된 CdS1-xSex 발광 소자의 전기적 특성은 Hall 효과 측정을 이용하고 광학적특성은 광발광 및 광전 류 스펙트럼, 감도, 최대 허용소비전력, 응답시간 등을 분서하교, 발광소자로서의 기능을 검토하였다.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.115-125
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• 1990

We have investigated bulk and hetero-epitaxial growth of GaAs single crystal. Various growth techniques such as HB, HZM, and VGF for high quality bulk GaAs were successfully developed by appling the specially designed DM(direct monitoring) furnace. Al GaAs/GaAs superlattice structure and In(x)Ga(1-x) As/GaAs epilayers were also grown by MOCVD and VPE, respectively. The characterization of GaAs single crystals and epilayers was made by X-ray diffraction, Hall effect, PL, chemical etching and angle lapping technique.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.246-252
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• 2011

The semiconducting $MnSi_{1.73}$ compound has been recognized as a thermoelectric material with excellent oxidation resistance and stable characteristics at elevated temperature. In the present work, we applied mechanical alloying (MA) technique to produce $MnSi_{1.73}$ compound using a mixture of elemental manganese and silicon powders. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-$K{\alpha}$ radiation, thermal analysis and scanning electron microscopy. Due to the observed larger loss of Si relative to Mn during mechanical alloying of $MnSi_{1.73}$, the starting composition of a mixture Mn-Si was modified to $MnSi_{1.83}$ and then $MnSi_{1.88}$. The single $MnSi_{1.73}$ phase has been obtained by mechanical alloying of $MnSi_{1.88}$ mixture powders for 200 hours. It is also found that the grain size of $MnSi_{1.73}$ compound powders analyzed by Hall plot method is reduced to 40 nm after 200 hours of milling.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.41-44
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• 2014

In this paper, we will investigate the activation energies of Nb for $TiO_2$ using Hall effect measurement and photoluminescence (PL) system. Nb-doped $TiO_2$ thin film was grown on $SrTiO_3$ substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.