• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.220-220
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• 2010

대향타겟식 스퍼터링 (Facing Target Sputtering, FTS) 장치를 이용하여 박막태양전지에 응용가능한 GAZO 박막을 플렉시블 기판 (PES) 위에 증착하였다 박막을 증착하는 데 쓰인 각각의 타겟은 AZO(ZnO:$Al_2O_3$=98:2w.t%) : GZO(ZnO:$Ga_2O_3$=97:3w.t%)이였으며, 다양한 스퍼터링 조건(공정압력, 입력 전력 및 박막의 두께)에서 증착 하였다. GAZO 박막의 전기적 특성은 Hall effect measurement, Four Point Probe, 광학적 특성은 UV-VIS spectrometer, 구조적 특성은 XRD, AFM, FE-SEM, 막의 두께는 $\alpha$-step profiler 장비를 이용하여 분석하였다. 가장 낮은 비저항은 작업 압력 1mTorr일 때 $5.123{\times}10^{-4}[\Omega-cm]$를 보였다. 또한 제작된 모든 박막은 (002)회절 피크로 우선성장함을 알 수 있었으며, 가시광선 영역(300nm-800nm)에서 80% 이상의 광 투과율을 나타냄을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.586-589
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• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical properties of AZO thin film were measured by a-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-4}\;\Omega-cm$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.93-96
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• 2005

In this study, AZO(ZnO:Al) thin film were Prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical Properties of AZO thin film were measured by $\alpha$-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over $80\%$ and the resistivity about $10^{-4}{\Omega}-cm$.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.57-60
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• 2009

Transparent electrode ZnO:Al(AZO)films were deposited on a PES (polyethersulfone) polymer substrate for thin film solar cells applications. A PES substrate with a thickness of 0.2mm and transmittance > 90% in the visible range was used because it is light weight and can deform easily. AZO thin films were prepared at a fixed DC power, $PO_2\;=\;P(O_2)/[P(O_2)\;+\;P(Ar)]$, and various substrate temperatures. The properties of AZO thin films were examined by X-ray diffraction, UV/VIS spectroscopy, four-point probe, Hall measurements, and field emission scanning electron microscopy. The lowest resistivity of all the films was $4.493\;{\times}\;10^{-4}\;[\Omega-cm]$ and the transmittance was > 80% in the visible range.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.53-57
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• 2019

In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).

• Progress in Superconductivity and Cryogenics
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• v.9 no.4
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• pp.7-10
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• 2007

The transport current distribution across the tape width of a SmBCO coated conductor was investigated. The current distribution was estimated by applying an inversion process to the field distribution measured in the vicinity of the tape by using a scanning Hall probe method. The obtained result is well consistent with one predicted by the Bean model, however, at the edges the current are not constant and do not generally plateau, on the contrary.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.61-68
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• 1997

We examined the dependence of the growth of undoped InP epilayer by chloride vapor phase epitaxy on the growth temperature and on the $PCl_3$molar fraction. The growth temperature was varied from $620^{\circ}C$ to $650^{\circ}C$ and the $PCl_3$molar franction from $2.5{\times}10^{-2}$ to $4.5{\times}10^{-2}$. The undoped InP epilayer with hillock free surface was obtained at the growth temperature of $640^{\circ}C$ and at the PCl$_3$molar fraction of $3.0{\times}10^{-2}$. The surface morphology was improved with a decrease of the PCl$_3$molar fraction. The carrier concentration measured by Hall and ECV was less than $1{\times}10^{14}cm^{-3}$. The resistivity of the undoped InP epilayer, measured by using four probe method, showed a high value of <$3.0{\times}10^6{\Omega}\textrm{cm}$.

• Journal of the Institute of Convergence Signal Processing
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• v.22 no.3
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• pp.91-98
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• 2021

The installation and performance test of the ISOL (Isotope Separation On Line) system for the generation and separation of Rare Isotopes (RI) beams is in progress at the Rare Isotope Science Project (RISP), Institute for Basic Science (IBS). The various RI beams generated by the ISOL target/ion source go through the beam lines and separators, and only the RI beam desired by the user is selected and transmitted to the superconducting linear accelerator at the downstream of the ISOL. In the ISOL system, two separators are installed to separate a specific RI beam, and control is performed by the Experimental Physics and Industrial Control System (EPICS). In this study, an EPICS IOC (Input-Output Control) was developed to measure the magnetic field of a dipole magnet for mass separation of a multivalent (n+) RI beam in the A/Q separator, which is one of the ISOL RI beam separators. The operational stability of the A/Q separator was tested through a magnetic field measurement using a Hall probe.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.