• Title/Summary/Keyword: Hall effect measurement

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Growth and characterization of superconductor-ferromagnet thin film heterostructure La1.85Sr0.15CuO4/SrRuO3

  • Kim, Youngdo;Sohn, Byungmin;Kim, Changyoung
    • Progress in Superconductivity and Cryogenics
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    • v.23 no.2
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    • pp.10-13
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    • 2021
  • Superconductor-ferromagnet thin film heterostructure is an ideal system for studying the interplay between superconductivity and ferromagnetism. These two antagonistic properties combined in thin film heterostructure create interesting proximity effects such as spin-triplet superconductivity. Thin film heterostructure of optimally doped La2-xSrxCuO4(LSCO) cuprate superconductor and SrRuO3(SRO) ruthenate ferromagnet has been grown by pulsed laser deposition. Its temperature-dependent resistivity and Hall effect measurements show that our LSCO/SRO heterostructure has both superconductivity and ferromagnetism. In the Hall effect measurement results, we find additional hump-like structures appear in the anomalous Hall effect signal in the vicinity of superconducting transition. We conclude that giant magnetoresistance of the LSCO layer distorts the AHE signal, which results in a hump-like structure.

Effect of Substrate Temperature on Polycrystalline Silicon Film Deposited on Al Layer (Al 박막을 이용한 다결정 Si 박막의 제조에서 기판온도 영향 연구)

  • Ahn, Kyung Min;Kang, Seung Mo;Ahn, Byung Tae
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.96.2-96.2
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    • 2010
  • The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.

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Application of Vibration Prediction Method Using Response Spectrum with Amplification Factor (증폭계수를 이용한 진동 예측기법의 적용)

  • 심재수;황의승;김덕중;윤종오
    • Journal of the Earthquake Engineering Society of Korea
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    • v.1 no.4
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    • pp.37-43
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    • 1997
  • Damages and public complaints are increased due to construction noise and vibration from several sources. It is urgently needed to develop the easy and practical method to estimate the vibration effect. In this study, to predict the vibration effect, the method using the response spectrum with amplification factor concepts prroposed by Newmark and Hall is used. Also the applicability of the method is examined. Vibration measurement on subway structure, foundation and building structures are performed and the results show that the provided method is practical and can be used to predict the vibration effect.

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A Study on the Fabrication and Characteristics of ITO thin Film Deposited by the Ionized Cluster Beam Deposition (Ionized Cluster Beam 증착방법을 이용한 Indium-Tin-Oxide(ITO) 박막의 제작과 그 특성에 관한 연구)

  • 최성창;황보상우;조만호;김남영;홍창의;이덕형;심태언;황정남
    • Journal of the Korean Vacuum Society
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    • v.5 no.1
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    • pp.54-61
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    • 1996
  • Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

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Structural and electrical properties of high temperature deposited epitaxial ZnO thin film by RF magentron sputtering (RF 마그네트론 스퍼터일 법으로 증착된 에피택셜 ZnO 박막의 구조적, 전기적 특성)

  • Kim, Dong-Hun;Cho, Nam-Gyu;Park, Hun;Kim, Ho-Gi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.184-185
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    • 2007
  • We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

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Carrier Densities of CdSe Thin Films (CdSe 박막반도체의 반송자 밀도)

  • 김기원
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.5
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    • pp.7-10
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    • 1984
  • Generally, free carrier densities of single crystal semiconductors are indifferent to methods of measurement. Free carrier densities of CdSe thin films, however, were measured invarious values with different methods In this paper, C-V method, Seebeck effect and a.c. Hall effect were used to measure carries densities of CdSe thin films. Carrier densities of CdSe thin films were in the range of 10 - 10 carriers/㎤. And causes of different results were discussed.

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Position Detection of a Capsule-type Endoscope by Magnetic Field Sensors (자계 센서를 이용한 캡슐형 내시경의 위치 측정)

  • Park, Joon-Byung;Kang, Heon;Hong, Yeh-Sun
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.6
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    • pp.66-71
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    • 2007
  • Development of a locomotive mechanism for the capsule type endoscopes will largely enhance their ability to diagnose disease of digestive organs. As a part of it, there should be provided a detection device of their position in human organs for the purpose of observation and motion control. In this paper, a permanent magnet outside human body was employed to project magnetic field on a capsule type endoscope, while its position dependent flux density was measured by three hall-effect sensors which were orthogonally installed inside the capsule. In order to detect the 2-D position data of the capsule with three hall-effect sensors including the roll, pitch and yaw angle, the permanent magnet was extra translated during the measurement. In this way, the 2-D coordinates and three rotation angles of a capsule endoscope on the same motion plane with the permanent magnet could be detected. The working principle and performance test results of the capsule position detection device were introduced in this paper showing that they could be also applied to 6-DOF position detection.

A Study on the development of gas metering valve system (가스 계량 밸브 시스템의 개발에 관한 연구)

  • Choi, Young-Gyu
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.7 no.4
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    • pp.200-204
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    • 2014
  • LPG is used in the home would have to depend on the provider, because there is no method for measuring the capacitance. In addition, by measuring the gas capacities can not be known because of the LPG gas replacement time and requires an alarm for replacement. In this study, and that the gas capacities to the trusted user and the supplier, in order to know when it is time to change to LPG gas by applying a Hall effect sensor developed a gas capacities measurement the valve system.

Electric conduction mechanism Analysis of AW Thin Films using XPS Measurement (XPS 분석에 의한 AZO 박막의 전기전도 메커니즘 해석)

  • Jin, Eun-Mi;Kim, Kyeong-Min;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.446-447
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    • 2007
  • Aluminisum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). In our paper, AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$, $800^{\circ}C$ for 2 hr with $N_2$ atmosphere, respectively. We investigated that the electric properties and qualitative analysis of AZO films, which measured using the methods of Hall effect, X-ray photoelectron spectroscopy (XPS).

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