• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.348-352
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• 1999

Barium uranium sulfides, $BaUS_3$ and $BaU_2B_5$, were synthesized in a single phase by the reactin of $(Ba, UO_2)(NO_3)_2$ at Ba/U=1 and 0.5 with carbon disulfide at 1273 K for 6 h. They crystallized in orthorhombic structure with space group, Pnma. The lattice parameters a, b and c are 7.493, 10.38 and 7.238$\AA$ for $BaUS_3$ and 7.525, 8.475 and 11.858$\AA$ for $BaU_2S_5$, respectively. The electrical conductivity of these compunds increased with increasing temperature above 200K, below which however, it was nearly temperature independent. The Hall coefficient suggested that they are n-type semiconductors.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.1
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• pp.28-31
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• 2004

The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.618-621
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• 2001

Plate-type $\beta$-FeSi$_2$single crystals were grown using FeSi$_2$, Fe, and Si as starting materials by the chemical transport reaction method. The $\beta$-FeSi$_2$single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the $\beta$-FeSi$_2$ single crystal. The electrical resistivity values was 1.608Ωcm and electron mobility was 3x10$^{-1}$ $\textrm{cm}^2$/V.sec at room temperature.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.298-298
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• 2003

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.786-788
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• 2013

Molybdenum (Mo) thin film has high electrical conductivity and has been used for a back contact of CIGS thin film solar cell. Generally, the electrical conductivity and the adhesion between the substrate and the film is greatly affected by sputtering conditions such as sputtering power, working pressure, and substrate temperature. In this study, Mo films were deposited by DC magnetron sputtering technique. The influence of sputtering pressure on the electrical and structural properties of Mo films was investigated by using SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, Reflectance, Hall measurement.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.195-199
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• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.202-206
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• 2001

Using THz time-domain spectroscopy (THz-TDS), the power absorption, the index of refraction, and the real conductivity of silica sand are measured from 0.1[Thz] to 0.5[Thz] frequency range. It is impossible to measure the characterization of the silica sand by simple electrical measurements using mechanical contacts, e.g., Hall effect or four-point probe measurements. However, the THz-TDS technique can measure not only electrical but also optical characterization of he sample. Also this technique can measure frequency dependent results. Especially, the real conductivity was increased according to THz frequency. This is unusual material compare with metal and semiconductor materials; the measured real conductivity are not followed by the simple Drude theory.

• Journal of Astronomy and Space Sciences
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• v.19 no.2
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• pp.141-150
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• 2002

The ionosphere plays an important role in the electrodynamics of space environment. In particular, the information on the ionospheric conductivity distribution is indispensable in understanding the electrodynamics of the magnetosphere and ionosphere coupling study. To meet such a requirement, several attempts have been made to estimate the conductivity distribution over the polar ionosphere. As one of such attempts we compare the ionospheric plasma convection patterns obtained from the Super Dual Auroral Radar Network (SuperDARN), from which the electric field distribution is estimated, and the simultaneously measured ground magnetic disturbance. Specifically, the electric field measured from the Goose Bay and Stokkseyri radars and magnetic disturbance data obtained from the west coast chain of Greenland are compared. In order to estimate ionospheric conductivity distribution with these information, the overhead infinite sheet current approximation is employed. As expected, the Hall conductance, height-integrated conductivity, shows a wide enhancement along the center of the auroral electrojet. However, Pedersen conductance shows negative values over a wide portion of the auroral oval region, a physically unacceptable situation. To alleviate this problem, the effect of the field-aligned current is taken into account. As a result, the region with negative Pedersen conductance disappears significantly, suggesting that the effect of the field-aligned current should be taken into account, when one wants to estimate ionospheric conductance based on ground magnetic disturbance and electric field measurements by radars.

• Journal of Magnetics
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• v.11 no.1
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• pp.1-4
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• 2006

We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of $0.052\;\omega{cm}$, a high carrier concentration of $6.2X10^{19}\;cm^{-3}$ and a Hall mobility of $1.8\;cm^2/Vs$. We also observed a clear decrease of the resistivity in samples after low temperature annealing.

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.134-136
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• 2004

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).