• Title/Summary/Keyword: Hall Effect

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An Effect of Letrozole on Gastric Cancer?

  • Hadi, Ahmed E.L.;Al-Momani, Hazem;Edwards, Paul
    • Journal of Gastric Cancer
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    • v.11 no.3
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    • pp.180-184
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    • 2011
  • Letrozole is a drug used in the treatment of postmenopausal women with breast and ovarian tumours. There is no evidence in the literature indicating its use in treating gastric cancer. We present a 68 year old lady admitted from the emergency department with weight loss, malaise and anaemia. Investigations confirmed the presence of two different primary tumours in the left breast and the stomach. Following that this patient with oestrogen receptor positive breast cancer and oestrogen receptor negative gastric cancer was treated with letrozole for her breast cancer followed by a gastric resection. Independent histology by two pathologists pre-operatively diagnosed gastric adenocarcinoma. Post-operatively, independent analysis of the resected stomach, omentum and lymph nodes revealed no evidence of gastric cancer. Therefore we conclude that there is a possibility of letrozole having an effect on gastric cancer. Further studies are needed.

Hall-effect properties of single crystal semiconductor P-GaSe dopes with $Er^{3+}$ (Erbium 도핑된 p-GaSe 단결정의 홀 효과 특성)

  • Lee, Woo-Sun;Oh, Guem-Kon;Chung, Young-Ho;Jung, Chang-Soo;Son, Kyeong-Choon;Kim, Nam-Oh
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.726-728
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    • 1998
  • Optical and electrical properties of GaSe:$Er^{3+}$ single crystals grown by the Bridgeman technique was been investigated by using optical absorption and Hall-effect measurements. The Hall coefficients were measured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. carrier density($N_H$) of GaSe doped with Erbium was measured about $3.25{\times}10^{16}\;[cm^{-3}}$ at temperature 300K, which was high than undoped specimen. Photon energy gap ($E_{gd}$) was measured about 1.7geV.

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Electrical Characteristics of GaN Epi Layer on Sapphire Substrates for AIGaN/GaN Heterostructures (AIGaN/GaN 이종접합 디바이스를 위한 GaN 에피층의 전기적 특성)

  • 문도성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.7
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    • pp.591-596
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    • 2002
  • In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

The Hall Effect in Binary Compound Silver telluride Single Crystal (2원화화물 $Ag_2Te$ 단결정의 Hall 효과 특성)

  • Kim, N.O.;Kim, H.G.;Jang, S.N.;Lee, K.S.;Bang, T.W.;Hyun, S.C.
    • Proceedings of the KIEE Conference
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    • 2004.07e
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    • pp.134-136
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    • 2004
  • The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

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A Study on the Hall losses and Magnetoresistance in Cu-Al Composite Conductor (Cu-Al 전도체에서의 홀손실과 자기저항에 관한 연구)

  • Kim, Sang-Keol;Jung, Il-Hyung;Kim, Jin-Sa;Lee, Joon-Ung
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.408-410
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    • 1997
  • An anomalous magnetoresistance effect has been observed at very low temperatures for composite normal metal conductors. This anomalous behavior is due to transverse Hall currents in the composite which would result in increased $I^2R$ losses and a higher effective resistance for the composite conductor. In this paper, transverse current flow and effective resistance of Cu-Al double-strip was analyzed using finite element method for predicting the Hall losses to be resulted in anomalous magnetoresistance effect, and then be able to visualized.

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On the Method of Measuring the Mobility using the Microwave by the Hall Effect in the semiconductor (마이크로파를 이용하여 반도체내의 Hall에 의한 이동도측정방법)

  • 허영남
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.8 no.2
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    • pp.54-62
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    • 1983
  • The electric characteristics of semiconductor materials can be found by way of various methods, of which the measurement of the carrier mobility is thought to be of great importance. There exist some mobilty measurements, but the measurement based on Hall effect is the most widely uesd. In this paper is adopted the mobility measurement of semiconductor by the use of cylindrical eavity operated in the same shape as TE modes. It is hoped that the resultant values of measurement, the structure of measurement circut, cavity design and the raising of relevant problems may give much help to those who may interested in this field.

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The Hall Effect in Silver Telluride Sing1e Crystal ($Ag_2Te$ 단결정의 Hall 효과 특성)

  • Kim, N.O.;Kim, H.G.;Jun, H.S.;Kim, B.C.;Oh, G.K.;Kim, D.T.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1407-1409
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    • 2003
  • The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686, b=9.0425, c=8.0065. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}cm$ and electron mobility was $-5.4810^{3}cm^{2}$/Vsec at room temperature(RT).

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A Study about Appraise on Acoustic Performance of small-scaled Multi-Purpose Hall, using Auralization (가청화를 이용한 소규모 다목적 홀의 음향 성능평가에 관한 연구)

  • Ju, Duck-Hoon;Yun, Jae-Hyun;Kim, Jae-Soo
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2007.11a
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    • pp.148-152
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    • 2007
  • In recent days, on account of the cultural development and the improvement of citizen's consciousness level, it is the real situation that the construction of small-scaled Multi-Purpose Hall where various cultural events could be performed, is on increasing. However, since the most of Multi-Purpose Hall had been designed and built up without any consideration on Acoustic Factor, many problems are on occurring thereat. Since those small-scaled Multi-Purpose Hall have been mostly used with the finishing material which contains a high degree of Acoustic Absorption indiscreetly, both diffusion and reflection of sound are not establishing properly, and because thereverberation of sound is very low, in case of musical performance by musical instrument, its sound hears too arid and stiff, there occurs some acoustic defect such as it becomes difficult for music appreciation with sufficient timbre, so that the capability improvement on the matter is urgently requiring situation. Therefore, this Study has tried to seize the satisfaction level about the small-scaled Multi-Purpose Hall after betterment of the acoustic performance by appraise the acoustic condition of the Hall, using Auralization Technique that can experience Virtual Acoustic Field regarding to the small-scaled Multi-Purpose Hall as its object. It is deemed that such research result could be practically used as the useful material which enables to bring a reduction effect of construction cost as well asenhancement of the acoustic performance through its presupposition?control on the acoustic problem when construction or renovation of other similar small-scaled Multi-Purpose Hall in the future.

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Mixed-state Hall angle Hg-based superconducting thin films

  • Kim, Wan-Seon;Lee, Sung-Ik;Kang, Won-Nam
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.41-44
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    • 2000
  • The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T$^{\ast}$) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T$^{\ast}$ shifts to low temperature with increasing fields. Interestingly, however, we found that T$^{\ast}$ is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H - T$^{\ast}$ line will be discussed.

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Mixed-state Hall Angle in Hg-based Superconducting Thin Films

  • Kang, Won-Nam;Kim, Wan-Seon;Lee, Sung-Ik
    • Progress in Superconductivity
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    • v.2 no.1
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    • pp.39-42
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    • 2000
  • The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T*) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T* shifts to low temperature with increasing fields. Interestingly, however, we found that T* is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H-T* line will be discussed.

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