• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.623-627
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• 2007

In case of the Grand Performance Hall, in view of its distinctiveness, since various Assembly Activity as well as Lecture together with the use for Music are important besides the purpose of Performance itself, the consideration with regard to the sound environment which enables to minimize the acoustic defect has appeared on the stage as an essential factor. On this viewpoint, this Study has attempted to examine the acoustic satisfaction degree and its response regarding to the grand performance hall by means of the measurement and valuation about the psychological volume of human-being using the auditory-evoked technology that possible to experience the Virtual Sound Field at the designing stage, after practice of the optimized acoustic design for the object of the grand performance hall on the step of construction. As the result of auditory-evocation, it was known that the valuation about the acoustic performance after reformation has been improved affirmatively than before reformation. It is considered that such outcome of the study could be utilized as the useful material that enables to improve the curtailment effect of construction cost and the acoustic performance, by means of the presupposition control about the acoustic problem from the stage of design, for the occasion when the similar Performance Hall is planning to build, hereafter.

• Progress in Superconductivity and Cryogenics
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• v.15 no.3
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• pp.5-8
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• 2013

We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${\rho}_{xx}$) and the Hall resistivity (${\rho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${\rho}_{xx}$ and the ${\rho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${\rho}_{xx}$and the ${\rho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$. The ${\beta}$ values are $3.0{\pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${\beta}$ than that of c-axis-oriented thin films. Interestingly, the ${\beta}$ value is decreased with increasing magnetic fields.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.841-845
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• 1995

The effect of small addition of Nb on the electrical resistivity and Hall coeffcient of the amorphous $Fe_{83}Zr_{7}B_{10}$ alloy and annealed ones ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities $\rho$ and the spontaneous Hall coeffcients $R_{s}$ are $~1.6\;{\mu}{\Omega}m$ and $~3{\times}10^{-8}m^{3}/As$, respectively. $R_{s}$ and $\rho$ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of conentration and annealing. The quantity of $R_{s}/{\rho}^{2}$ at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. The unexpected temperature dependence of $R_{s}/{\rho}^{2}$ measured at low fields much below Tc is left as a question.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.772-777
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• 1995

The effect of small addition of Nb on the electrical resistivity and Hall coefficient of the amorphous $Fe_{83}Zr_{7}B_{10}$ alloy and annealed ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities $\rho$ and the spontaneous Hall coefficients $R_{s}$ are $~1.6\;{\mu}{\Omega}m$ and $~3{\times}10^{-8}m^{3}/As$, respectively. $R_{s}$ and $\rho$ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of concentration and annealing. The quantity of $R_{s}/{\rho}^{2}$ at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. We suggested the temperature dependence of $R_{s}/{\rho}^{2}$ can be compared to Ms{T}.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.307-307
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.58.1-58.1
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• 2007

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.49-52
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• 2003

The effects of nitrogen on the deformation behavior of duplex stainless steel have been studied The variation of strength was correlated with the characteristic microstructures. Analysis based on Hall-Petch relation confirmed that nitrogen enhances phase-boundary strengthening effect. The evolution of dislocation structure, slip traces, and misorientation distribution during deformation were also characterized to elucidate the effect of nitrogen on inelastic deformation mechanism.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.31-31
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• 2004

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.35-35
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• 2002

• International Journal of Advanced Culture Technology
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• v.3 no.1
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• pp.113-119
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• 2015

This paper presents a design and implementation of real time electrical energy computing tool to measure and record the electrical energy based on type of detection devices, Hall Effect current sensor and Microcontroller. The tool was installed on the system power supply of the room and compared with kWh meter. Finally, we found that the energy record has error of average power calculating results is 0.077%.