Abstract
The effect of small addition of Nb on the electrical resistivity and Hall coeffcient of the amorphous $Fe_{83}Zr_{7}B_{10}$ alloy and annealed ones ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities $\rho$ and the spontaneous Hall coeffcients $R_{s}$ are $~1.6\;{\mu}{\Omega}m$ and $~3{\times}10^{-8}m^{3}/As$, respectively. $R_{s}$ and $\rho$ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of conentration and annealing. The quantity of $R_{s}/{\rho}^{2}$ at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. The unexpected temperature dependence of $R_{s}/{\rho}^{2}$ measured at low fields much below Tc is left as a question.
