• Proceedings of the Korean Institute Of Construction Engineering and Management
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• autumn
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• pp.214-221
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• 2001

The Great Hall of Incheon International Airport Transportation Center has irregular curved roof structure. The structure consists of 13 main steel trusses. (the longest span of 162m, 480ton) The total weight of the truss is 6,300ton and the whole truss is made of 9,600 pieces which has the joint connected to maximum 13 different parts at one point and Roof Truss is supported by 12 Fabric Foundation. Considering the economical efficiency and the schedule, the Sliding Construction Method was used other than conventional erection method. The roof truss structure was divided into two blocks, 3,550ton and 2,700ton, each block was pre-erected on the Giant Sleigh off the site and was pulled 181m by using Tandem Pulling Jack and Strand to be set in place.

• Transactions of the Korean Society of Automotive Engineers
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• v.17 no.5
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• pp.74-83
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• 2009

Recently, usage of electric and electronic system for car increases rapidly. Consequently power monitoring supplied to the system is essential for management and controlling. Generally, battery status is monitored through measuring and diagnosing the current measurement method utilizing Hall Effect. Therefore, in this paper, we analysed magnetic field to develop the solution of DC current sensor using Hall Effect which is the core of design and development. By analysing the magnetic field by FEM using Maxwell 3D software, the location of the highest output current and stable part in the Hall IC sensor was shown. Also, the optimal core design of DC current sensor using parametric and Simplex method was presented. A car battery charge and discharge process dependant on time effect on the changing of magnetic field was simulated and compared to the result from the experiment result of actual vehicle.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.1
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• pp.116-121
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• 2019

The LVDT (Linear Variable Displacement Transducer) type sensor used for the existing ship's steering gear is simple on / off that does not perform proportional control operation to the control & unloading device. When the main spool is located at both extremes, It is reflected in the price by using an expensive sensor for import. In this paper, the Hall Effect Sensor is applied to Hydraulic Locking Alarm to analyze classification rules, structure, characteristics and operation principle of valves, and research on localization development in terms of cost reduction. The comparative analysis of the existing prototypes and the cause analysis of the problems were carried out, and the structural analysis showed satisfactory results within the allowable stress range. In addition, it was verified through experiments that the actual operation is realized by applying the actual developed product, and it was confirmed that the load on the maximum value exceeds the allowable maximum load even in the case of the universal tensile test in preparation for the departure of the rod casing.

• 전기의세계
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• v.33 no.4
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• pp.214-220
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• 1984

본고에서는 SI Ga As의 제조방법 및 전도매체들의 깊은 에너지위치(deep level)에 의한 상쇄현상(compensation)을 간략히 설명한 후 넓은 자장영역 (B=0-13T)에서의 Hall 효과 및 magnetoresistance (MR)에 의한 전기적 특성 연구방법을 설명하고, 전도매체의 재결합 현상을 연구할 수 있는 일반화 PME효과 (FA-PME)에 대해 기술한 후 SI Ga As 기판의 응용에 대해 간략히 기술하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.7-10
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• 1984

Generally, free carrier densities of single crystal semiconductors are indifferent to methods of measurement. Free carrier densities of CdSe thin films, however, were measured invarious values with different methods In this paper, C-V method, Seebeck effect and a.c. Hall effect were used to measure carries densities of CdSe thin films. Carrier densities of CdSe thin films were in the range of 10 - 10 carriers/㎤. And causes of different results were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.95-95
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• 2010

나노 크기에서 존재하는 Grain Boundary나 Dislocation과 같은 결함들은 거시적인 물성을 크게 좌우하는 요인들이 되기도 한다. 또한 다결정을 이루고 있는 입도(Grain Size)에 따라 기계적인 강도 특성도 달라지는데, 금속의 경우에 입도가 비교적 큰 영역(d > $d_c$)에서는 입도가 작고 균일해지면서 강도가 증가하는 'Hall-Petch 효과'를 보인다. 반면 입도가 작은 영역(d < $d_c$)에서는 입도가 줄어들 때 강도가 감소하는 경향을 보이는데 이를 '역 Hall-Petch 효과'라고 한다. 본 연구에서는 분자 동역학을 이용한 단결정과 다결정의 Si에 대한 기계적 성질에 대해 조사한다. 입도와 온도 변화에 따른 단결정 Si와 다결정 Si의 Strain-Stress Curve와 Young's Modulus, Yield Point에 대해 관찰하고 특이점을 제시한다. 이를 통해 나노 영역에서의 기계적 성질의 예측과 거시적 영역에서의 성질의 연관성을 추구한다.

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.38-39
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.118-119
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• 2000

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.265-273
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• 1997

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigate the surface carrier concentration, Hall electron mobility, electrical resistivity and sensitivity according to temperature variation and TMA gas concentration. The ZnO-based thin film sensors prepared by sputtering in oxygen showed higher surface carrier concentration, higher Hall mobility, higher sensitivity, and lower electrical resistivity than sensors prepared by sputtering in argon. The doping ZnO-based thin film sensors showed the same electrical properties in comparison with nondoping sensors. In case of sputtering on the oxygen gaseous atmosphere, the ZnO-based thin film sensors doped with 4.0 wt.% $Al_{2}O_{3}$, 1.0 wt.% $TiO_{2}$, and 0.2 wt.% $V_{2}O_{3}$ showed the highest surface carrier concentration of $5.95{\times}10^{20}cm^{-3}$, Hall electron mobility of $177\;cm^{2}/V{\cdot}s$, lowest electrical resistivity of $0.59{\times}10^{-4}{\Omega}{\cdot}cm$ and highest sensitivity of 12.1(working temperature, $300^{\circ}C$, TMA gas, 8 ppm).