• Title/Summary/Keyword: Ha partial pressure

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Fabrication of long SmBCO coated conductor on IBAD-MgO template using co-evaporation method (동시증발법을 이용한 SmBCO/IBAD-MgO 박막 장선재 제조)

  • Ha, H.S.;Kim, H.S.;Ko, R.K.;Yoo, K.K.;Yang, J.S.;Kim, H.K.;Jung, S.W.;Lee, J.H.;Lee, N.J.;Kim, T.H.;Song, K.J.;Ha, D.W.;Oh, S.S.;Youm, D.;Park, C.;Yoo, S.I.;Moon, S.H.;Joo, J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.241-241
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    • 2007
  • We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

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Thermodynamics of 2, N-Dimethyl Pyridinium Iodide in Ethanol-Water Mixture under High Pressure

  • Jee, Jong-Gi;Lee, Young-Hwa;Woo, Eui-Ha;Lee, Kyung-Hee
    • Bulletin of the Korean Chemical Society
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    • v.4 no.3
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    • pp.115-119
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    • 1983
  • The ionic association constants (K) of 2, N-dimethyl pyridinium iodide (2NDMPI) in 95 volume percentage ethanol-water mixture were determined by a modified UV and conductance method at $20^{\circ}C{\sim}50^{\circ}C$ under 1 to 2000 bars. The K values increase with increasing pressure and decrease with temperature. The total partial molar volume change (${\Delta}V$) has relatively small negative value and the absolute ${\Delta}V$ value decrease with increasing pressure and temperature. The ion size (a) and solvation number (n) of 2NDMPI were about 5 $\AA$ and changed from 1 to 3 with decreasing temperature. Other thermodynamic parameters such as enthalpy (${\Delta}H^{\circ}$) and entropy (${\Delta}S^{\circ}$) for the equilibrium of the 2NDMPI were evaluated. From all the parameters mentioned above, we came to conclusion that the electrostriction effect of 2NDMPI in the ethanol-water mixture is enhanced with increasing pressure and decreasing temperature.

A Study on the Synthesis of Titanium Nitride by SHS(Self-propagating High-temperature Synthesis) Method (자체반응열 고온합성법에 의한 질화티타늄 합성에 관한 연구)

  • Ha, Ho;Kim, Kwang-Rae;Lee, Hee-Cheol
    • Journal of the Korean Ceramic Society
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    • v.30 no.12
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    • pp.1096-1102
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    • 1993
  • Titanium nitride was synthesized by reacting Ti powder with nitrogen gas using SHS method. In this process, the effects of nitrogen pressure, dilution with TiN, or additiion of titanium hydride(TiH1.924) on the conversion of Ti to TiN were investigated. In particular, much effects were given to solve the problem of the conversion drop due to partial melting and subsequent sintering of Ti parciels, by controlling combustion temperature and combustion wave velocity via mixing Ti powder with TiN or/and TiH1.924. For the diluted titanium powders with TiN, the conversion close to 100% was resulted when the nitrogen pressure was over 8atm and with diluent content of 60wt%, and the self-propagating reaction was not sustained when the diluent content was higher than 60wt%. For samples mixed to be 55wt% in Ti component in the mixture of Ti, TiH1.924, and 45% TiN, the conversion was closed to 100% when the amount of titanium hydride added was over 7wt% and the nitrogen pressure was higher than 5atm. The combustion reaction, however, was not sustained when titanium hydride added was more than 10wt%.

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An Accidental Position Detection Algorithm for High-Pressure Equipment using Microphone Array (Microphone Array를 이용한 고압설비의 고장위치인식 알고리즘)

  • Kim, Deuk-Kwon;Han, Sun-Sin;Ha, Hyun-Uk;Lee, Jang-Myung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.12
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    • pp.2300-2307
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    • 2008
  • This study receives the noise transmitted in a constant audio frequency range through a microphone array in which the noise(like grease in a pan) occurs on the power supply line due to the troublesome partial discharge(arc). Then by going through a series of signal processing of removing noise, this study measures the distance and direction up to the noise caused by the troublesome partial discharge(arc) and monitors the result by displaying in the analog and digital method. After these, it determines the state of each size and judges the distance and direction of problematic part. When the signal sound transmitted by the signal source of bad insulator is received on each microphone, the signal comes only in the frequency range of 20 kHz by passing through the circuit of amplification and 6th low pass filter. Then, this signal is entered in a digital value of digital signal processing(TMS320F2812) through the 16-bit A/D conversion. By doing so, the sound distance, direction and coordinate of bad insulator can be detected by realizing the correlation method of detecting the arriving time difference occurring on each microphone and the algorithm of detecting maximum time difference.

$Y_2O_3$ single buffer layer deposition using DC reactive sputtering for the superconducting coated conductor (DC reactive sputtering 증착법을 이용한 초전도테이프의 $Y_2O_3$ 단일완충층 증착)

  • Kim, Ho-Sup;Ko, Rock-Kil;Oh, Sang-Soo;Kim, Tae-Hyung;Song, Kyu-Jeong;Ha, Hong-Soo;Yang, Ju-Saeng;Park, Yu-Mi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.52-53
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    • 2005
  • $Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.

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Synthesis and Properties of Y0.08Sr0.92Fe0.3Ti0.7O3 as Ceramic Anode for SOFC (SOFC의 세라믹 음극물질로서 Y0.08Sr0.92Fe0.3Ti0.7O3의 합성 및 물성 평가)

  • Lee, Tae-Hee;Jeon, Sang-Yun;Im, Ha-Ni;Song, Sung-Ju
    • KEPCO Journal on Electric Power and Energy
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    • v.7 no.1
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    • pp.161-165
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    • 2021
  • In general, SOFCs mainly use Ni-YSZ cermet, a mixture of Ni and YSZ, as an anode material, which is stable in a high-temperature reducing atmosphere. However, when SOFCs have operated at a high temperature for a long time, the structural change of Ni occurs and it results in the problem of reducing durability and efficiency. Accordingly, a development of a new anode material that can replace existing nickel and exhibits similar performance is in progress. In this study, SrTiO3, which is a perovskite-based mixed conductor and one of the candidate materials, was used. In order to increase the electrical conduction properties, Y0.08Sr0.92Fe0.3Ti0.7O3, doped with 0.08 mol of Y3+ in Sr-site and 0.03 mol of transition metal Fe3+ in Ti-site, was synthesized and its chemical diffusion coefficient and reaction constant were measured. Its electrical conductivity changes were also observed while changing the oxygen partial pressure at a constant temperature. The performance as a candidate electrode material was verified by predicting the defect area through the electrical conductivity pattern according to the oxygen partial pressure.

Oxygenation Index in the First 24 Hours after the Diagnosis of Acute Respiratory Distress Syndrome as a Surrogate Metric for Risk Stratification in Children

  • Kim, Soo Yeon;Kim, Byuhree;Choi, Sun Ha;Kim, Jong Deok;Sol, In Suk;Kim, Min Jung;Kim, Yoon Hee;Kim, Kyung Won;Sohn, Myung Hyun;Kim, Kyu-Earn
    • Acute and Critical Care
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    • v.33 no.4
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    • pp.222-229
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    • 2018
  • Background: The diagnosis of pediatric acute respiratory distress syndrome (PARDS) is a pragmatic decision based on the degree of hypoxia at the time of onset. We aimed to determine whether reclassification using oxygenation metrics 24 hours after diagnosis could provide prognostic ability for outcomes in PARDS. Methods: Two hundred and eighty-eight pediatric patients admitted between January 1, 2010 and January 30, 2017, who met the inclusion criteria for PARDS were retrospectively analyzed. Reclassification based on data measured 24 hours after diagnosis was compared with the initial classification, and changes in pressure parameters and oxygenation were investigated for their prognostic value with respect to mortality. Results: PARDS severity varied widely in the first 24 hours; 52.4% of patients showed an improvement, 35.4% showed no change, and 12.2% either showed progression of PARDS or died. Multivariate analysis revealed that mortality risk significantly increased for the severe group, based on classification using metrics collected 24 hours after diagnosis (adjusted odds ratio, 26.84; 95% confidence interval [CI], 3.43 to 209.89; P=0.002). Compared to changes in pressure variables (peak inspiratory pressure and driving pressure), changes in oxygenation (arterial partial pressure of oxygen to fraction of inspired oxygen) over the first 24 hours showed statistically better discriminative power for mortality (area under the receiver operating characteristic curve, 0.701; 95% CI, 0.636 to 0.766; P<0.001). Conclusions: Implementation of reclassification based on oxygenation metrics 24 hours after diagnosis effectively stratified outcomes in PARDS. Progress within the first 24 hours was significantly associated with outcomes in PARDS, and oxygenation response was the most discernable surrogate metric for mortality.

Soft Magnetic Properties of CoFeAlO Thin Films for Ultrahigh Frequency Applications (고주파용 CoFeAlO계 박막의 자기적 특성)

  • Kim, Hyeon-Bin;Yun, Dae-Sik;Ha, N.-D.;Kim, Jong-O
    • Journal of the Korean Magnetics Society
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    • v.15 no.1
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    • pp.17-20
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    • 2005
  • The influence of $O_2$ partial pressure on saturation mgnetization, coercivity, anisotropy field and effective permeability (over 1GHz) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film fabricated at $O_2$ partial pressure of 4% exhibits the best magnetic softness with saturation magnetization 4${$pi}$Ms of 18.1 kG, coercivity of 0.82 Oe, anisotropy field ($H_k$) of Oe, and effective permeability (${\mu}_{eff}$) about 1,024 above 1 GHz. the electrical resistivity of Co-Fe-Al-O thin films were increased with increasing $O_2$ partial pressure, the electrical resistivity of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film with the best soft magnetic properties was 560.7 ${\mu}{\Omega}$am. Therefore, It is assumed that the good soft magnetic properties of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film results from high electrical resistivity and large anisotropy field.

Optimizing Graphene Growth on the Electrolytic Copper Foils by Controlling Surface Condition and Annealing Procedure (전해구리막의 표면 조건과 어닐링 과정을 통한 그래핀 성장 최적화)

  • Woo Jin Lee;Ha Eun Go;Tae Rim Koo;Jae Sung Lee;Joon Woo Lee;Soun Gi Hong;Sang-Ho Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.3
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    • pp.192-200
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    • 2023
  • Graphene, a two-dimensional material, has shown great potential in a variety of applications including microelectronics, optoelectronics, and graphene-based batteries due to its excellent electronic conductivity. However, the production of large-area, high-quality graphene remains a challenge. In this study, we investigated graphene growth on electrolytic copper foil using thermochemical vapor deposition (TCVD) to achieve a similar level of quality to the cold-rolled copper substrate at a lower cost. The combined effects of pre-annealing time, graphenized temperature, and partial pressure of hydrogen on graphene coverage and domain size were analyzed and correlated with the roughness and crystallographic texture of the copper substrate. Our results show that controlling the crystallographic texture of copper substrates through annealing is an effective way to improve graphene growth properties, which will potentially lead to more efficient and cost-effective graphene production. At a hydrogen partial pressure that is disadvantageous in graphene growth, electrolytic copper had an average size of 8.039 ㎛2, whereas rolled copper had a size of 19.092 ㎛2, which was a large difference of 42.1% compared to rolled copper. However, at the proper hydrogen partial pressure, electrolytic copper had an average size of 30.279 ㎛2 and rolled copper had a size of 32.378 ㎛2, showing a much smaller difference of 93.5% than before. This observation suggests this potentially leads the way for more efficient and cost-effective graphene production.

Preparation of $SnO_2$ Thin Film Using Reactive DC Magnetron Sputtering (반응성 DC 마그네트론 스퍼터법에 의한 $SnO_2$ 박막재조 및 특성)

  • Jung, H.W.;Lee, C.;Shin, J.H.;Song, K.H.;Shin, S.H.;Park, J.I.;Park, K.J.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1352-1354
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    • 1997
  • Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

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