• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.327-338
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• 2004

XRD studies on annealed Na-feldspar (Amelia albite) at $1100^{\circ}C$ showed rapid structural changes due to Si-Al disordering, which resulted in phase transformations from low albite to high albite by 4-days annealing test. TEM SAED analyses on the annealed samples revealed a trend of structural changes, but estimation of the structural state was difficult due to a large deviation of the SAED data. Optimum conditions of CBED analyses on albite was established by employing a cooling specimen holder, 120 kV of acceleration voltage, 37 Jim of condenser aperture size and 25 nm of spot size. A proper orientation showing distinct changes of HOLZ lines corresponding to the structure changes of albite turned out to be close to the [418] direction with $-1.2^{\circ}$ tilting, where the width of two HOLZ lines in low albite was opposite to those in high albite.

• Analytical Science and Technology
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• v.5 no.1
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• pp.121-126
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• 1992

Transmission electron microscopy was used to investigate the structure of GaAs ${\Sigma}=19$, [110] tilt grain boundaries. Relative positions of Ga and As atoms in each grain on either side of the boundaries were determined by examining the dynamical coupling between HOLZ reflections and(200) beams. No inversion symmetry was present across the boundaries. These boundaries were observed to have a strong tendency to lie parallel to {331} planes. The atomic structure and lattice translation at these boundaries was studied in detail by high-resolution transmission electron microscopy(HRTEM). The boundary consists of units of 5-, 7-, and two 6-member rings.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.69-74
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• 1995

GaAs tilt grain boundaries were propared by growing GaAs epilayers on Ge bicrystals by an organometallic vapor phase epitaxy (OMVPE) method ∑ =9 tilt grain boundaries were produced when two different first-order twin boundaries interacted with one another in GaAs epilayers. Structural investigations were performed for the coherent and second-order twin boundaries of GaAs by high-resolution transmission electron microscopy (HRTEM). Polarities of cross-boundary bondings were determined from the high-order Laue zone (HOLZ) lines in the (200) convergent beam disks : these were recorded from the two grains on either side of the boundaries, respectively, at particular diffraction conditions.