• Title/Summary/Keyword: HOLZ

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Effects of Higher-Order Laue Zone Reflections on HRTEM Images for illumination along an off-Bone Axis of a Crystal (비 결정 축(off-zone axis)으로 입사된 빔에 대한 고 분해 투과전자현미경 이미지에서 HOLZ 반사 빔의 효과)

  • Kim, Hwang-Su
    • Applied Microscopy
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    • v.37 no.4
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    • pp.259-269
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    • 2007
  • In this paper we explored a possibility of observation for effects of higher-order Laue zone(HOLZ) reflections on high resolution transmission electron microscope(HRTEM) images for illumination along an off-zone axis of a crystal. The analysis of the observation could give useful three dimensional crystal structure information. For the image simulation the Howie-Whelan equation was used with modification of including HOLZ reflections. This study clearly indicates that HRTEM images for a very thin crystal tilted by a few degrees from a zone axis show the effects of HOLZ reflections and contain some information of atomic arrangements along the zone axis.

Application of CBED Techniques of Energy Filtering TEM for Si-Al Disordering Study of Albite (알바이트의 Si-Al 배열상태 연구를 위한 에너지여과 투과전자현미경의 CBED법 적용)

  • Lee Young Boo;Kim Youn Joong;Lee Joung Hoo
    • Journal of the Mineralogical Society of Korea
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    • v.17 no.4
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    • pp.327-338
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    • 2004
  • XRD studies on annealed Na-feldspar (Amelia albite) at $1100^{\circ}C$ showed rapid structural changes due to Si-Al disordering, which resulted in phase transformations from low albite to high albite by 4-days annealing test. TEM SAED analyses on the annealed samples revealed a trend of structural changes, but estimation of the structural state was difficult due to a large deviation of the SAED data. Optimum conditions of CBED analyses on albite was established by employing a cooling specimen holder, 120 kV of acceleration voltage, 37 Jim of condenser aperture size and 25 nm of spot size. A proper orientation showing distinct changes of HOLZ lines corresponding to the structure changes of albite turned out to be close to the [418] direction with $-1.2^{\circ}$ tilting, where the width of two HOLZ lines in low albite was opposite to those in high albite.

Transmission Electron Microscopy of GaAs Planar Defects (투과전자현미경을 이용한 GaAs의 면결함 구조 연구)

  • Cho, N.H.;Hong, Kug Sun;Cater, C.B.
    • Analytical Science and Technology
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    • v.5 no.1
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    • pp.121-126
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    • 1992
  • Transmission electron microscopy was used to investigate the structure of GaAs ${\Sigma}=19$, [110] tilt grain boundaries. Relative positions of Ga and As atoms in each grain on either side of the boundaries were determined by examining the dynamical coupling between HOLZ reflections and(200) beams. No inversion symmetry was present across the boundaries. These boundaries were observed to have a strong tendency to lie parallel to {331} planes. The atomic structure and lattice translation at these boundaries was studied in detail by high-resolution transmission electron microscopy(HRTEM). The boundary consists of units of 5-, 7-, and two 6-member rings.

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Investigation of GaAs Tilt Grain Boundaries by High-resolution Transmission Electron Microscopy (HITEM을 이용한 GaAs 기울임입계 구조 연구)

  • ;C. B. Carter
    • Korean Journal of Crystallography
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    • v.6 no.2
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    • pp.69-74
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    • 1995
  • GaAs tilt grain boundaries were propared by growing GaAs epilayers on Ge bicrystals by an organometallic vapor phase epitaxy (OMVPE) method ∑ =9 tilt grain boundaries were produced when two different first-order twin boundaries interacted with one another in GaAs epilayers. Structural investigations were performed for the coherent and second-order twin boundaries of GaAs by high-resolution transmission electron microscopy (HRTEM). Polarities of cross-boundary bondings were determined from the high-order Laue zone (HOLZ) lines in the (200) convergent beam disks : these were recorded from the two grains on either side of the boundaries, respectively, at particular diffraction conditions.

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Comparison of mass operator methods considering test uncertainties

  • Olympio, K.R.;Blender, F.;Holz, M.;Kommer, A.;Vetter, R.
    • Advances in aircraft and spacecraft science
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    • v.5 no.2
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    • pp.277-294
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    • 2018
  • In the space industry, structures undergo several vibration and acoustic tests in order to verify their design and give confidence that they will survive the launch and other critical in-orbit dynamic scenarios. At component level, vibration tests are conducted with the aim to reach local or global interface loads without exceeding the design loads. So, it is often necessary to control and limit the input based on a load criterion. This means the test engineer should be able to assess the interface loads, even when load cannot be measured. This paper presents various approaches to evaluate interface loads using measured accelerations and by referring to mass operators. Various methods, from curve fitting techniques to finite element-based methods are presented. The methods are compared using signals with known imperfection to identify strengths and weaknesses of each mass operator definition.

Measurements of Lattice Strain in MOCVD-GaN Thin Film Grown on a Sapphire Substrate Treated by Reactive Ion Beam (활성화 이온빔 처리된 Sapphire기판 위에 성장시킨 MOCVD-GaN 박막의 격자변형량 측정)

  • Kim, Hyun-Jung;Kim, Gyeung-Ho
    • Applied Microscopy
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    • v.30 no.4
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    • pp.337-345
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    • 2000
  • Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

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Atomic structure and crystallography of joints in SnO2 nanowire networks

  • Hrkac, Viktor;Wolff, Niklas;Duppel, Viola;Paulowicz, Ingo;Adelung, Rainer;Mishra, Yogendra Kumar;Kienle, Lorenz
    • Applied Microscopy
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    • v.49
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    • pp.1.1-1.10
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    • 2019
  • Joints of three-dimensional (3D) rutile-type (r) tin dioxide ($SnO_2$) nanowire networks, produced by the flame transport synthesis (FTS), are formed by coherent twin boundaries at $(101)^r$ serving for the interpenetration of the nanowires. Transmission electron microscopy (TEM) methods, i.e. high resolution and (precession) electron diffraction (PED), were utilized to collect information of the atomic interface structure along the edge-on zone axes $[010]^r$, $[111]^r$ and superposition directions $[001]^r$, $[101]^r$. A model of the twin boundary is generated by a supercell approach, serving as base for simulations of all given real and reciprocal space data as for the elaboration of three-dimensional, i.e. relrod and higher order Laue zones (HOLZ), contributions to the intensity distribution of PED patterns. Confirmed by the comparison of simulated and experimental findings, details of the structural distortion at the twin boundary can be demonstrated.

Investigation of EVA Accelerated Degradation Test for Silicon Photovoltaic Modules

  • Kim, Jaeun;Rabelo, Matheus;Holz, Markus;Cho, Eun-Chel;Yi, Junsin
    • New & Renewable Energy
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    • v.17 no.2
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    • pp.24-31
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    • 2021
  • Renewable energy has become more popular with the increase in the use of solar power. Consequently, the disposal of defective and old solar panels is gradually increasing giving rise to a new problem. Furthermore, the efficiency and power output decreases with aging. Researchers worldwide are engaged in solving this problem by developing eco-module technologies that restore and reuse the solar panels according to the defect types rather than simple disposal. The eco-module technology not only solves the environmental problem, but also has economic advantages, such as extending the module life. Replacement of encapsulants contributes to a major portion of the module maintenance plan, as the degradation of encapsulants accounts for 60% of the problems found in modules over the past years. However, the current International Electrotechnical Commission (IEC) standard testing was designed for the commercialization of solar modules. As the problem caused by long-term use is not considered, this method is not suitable for the quality assurance evaluation of the eco-module. Therefore, to design a new accelerated test, this paper provides an overview of EVA degradation and comparison with the IEC and accelerated tests.