• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1014-1019
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• 2001

The diamond thin film was deposited on Si(100) substrate from$CH_3OH/H_2O$mixtured gas using a hot filament chemical vapor deposition(HFCVD) method. The deposition condition for samples has been varried with the$CH_3OH/H_2O$composition. Scanning electron microscopy(SEM) and Raman spectroscopy has been employed for the sample analysis. The diamond sample has been obtained below 20Pa with$CH_3OH/H_2O$mixtured gas. The crystallinity of diamond film improved as the composition $CH_3OH$decreases from 60Vol% to 52Vol%, and the sample structure changed from the cauliflower to the diamond structure. But the sample structure was becomes cauliflower at 50Vol% of in$CH_3OH$ in the $CH_3OH/H_2O$. It was shown that the$CH_3OH$ has threshold composition.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.835-839
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• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.94-103
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• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.132-132
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• 2002

Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. A study on the effects of growth kinetics and properties of diamond films obtained by addition of argon (~7 vol. %) into the methane/hydrogen mixture is carried out using HFCVD system. A negative bias was used as a nucleation enhancement method in addition to the argon dilution. The scanning electron microscopy (SEM) image of surface morphology shows well faceted crystallites with a predominance of angular shapes corresponding to <100> and <110> crystalline surfaces. The nucleation density and growth rate with argon dilution is two orders of magnitude higher than without argon deposition. The Raman spectra show a good quality film whereas XPS spectra show existence of only diamond phase.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.31-35
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• 2003

The intensity is measured as functions of both distance from filament to substrate and $CH_3$OH/($CH_3$OH＋$H_2$O) ratio by OES(Optical Emission Spectroscopy) to investigate the effects of activation species such as $H_{\alpha}$, $H_{\beta}$, H$\Upsilon\;C_3$, CH on diamond film growth.$ H_{\alpha}$ increases as $CH_3$OH composition decreases, while CH increases as $CH_3$OH composition increases. The intensity of $H_{\alpha}$ decreases as the distance increases and that of CH increases as the distance increases. The intensities of other activation species of $H_{\beta}$, H$\Upsilon\;C_3$, do not vary as a function of measured position distance. It varies randomly. It means that various parameters for depositing diamond thin film can be explained by the intensity(density) change of activation species, as a function of the distance of the filament.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.53-57
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• 2019

Stability and activity of boron doped diamond (BDD) electrode are key factors for water treatment. In this study, BDD electrodes were prepared on various substrates such as Nb, Si, Ti, and $TiN_x/Ti$ by hot filament chemical vapor deposition (HFCVD) method. BDD/Ti film showed the delamination between BDD and Ti substrate due to the formation of TiC layer caused by diffusion of carbon. On the other hand, $BDD/TiN_x/Ti$ showed remarkably improved stability, compared to BDD/Ti. It was confirmed that $TiN_x$ intermediate layer act as barrier layer for diffusion of carbon. High potential window of 2.8 eV was maintained on the $BDD/TiN_x/Ti$ electrode and, better wastewater treatment capability and longer electrode working life than BDD/Nb, BDD/Si and BDD/Ti were obtained.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.1-7
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• 2024

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (R_a) remained similar to substrate R_a, but higher substrate R_a led to decreased crystallinity. Nb substrate with 0.83 ㎛ R_a exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 ㎛ R_a showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm^-1 diamond peak in R_aman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.241-248
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• 2020

The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.