• 공업화학
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• 제10권4호
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• pp.568-575
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• 1999

백금족 금소과 규산염을 포함하는 자동차 폐촉매 내의 백금족 금속과 주요 성분들을 ICP-AES로 동시에 분석하기 위한 두 종류의 전처리 방법이 비교되었다. HF, $HNO_3$, HCl, $HClO_4$, $H_2O_2$, 및 $H_3BO_3$ 등의 혼합산의 다양한 조합을 사용하여 열판(hot plate) 용해법과 밀폐용기를 사용하는 극초단파(microwave) 가압-가열법을 비교 검토하였다. 전통적인 열판 용해법보다 밀폐용기를 사용한 극초단파 가압-가열법이 화수율, 분석시간 및 사용하는 양 등의 측면에서 상대적으로 우수한 결과를 나타내었고, 0.25 g의 폐촉매 시료에 대하여 HF 2 mL, $HNO_3$2 mL, 그리고 HCl 6 mL를 사용하여 200 psi(13.79 bar), $180^{\circ}C$ 조건에서 1시간 동안 가열한 후, 5% (w/v) $H_3BO_3$ 16 mL를 사용하여 20 psi(1.38 bar), $100^{\circ}C$ 조건에서 10분간 가열한 다음, 왕수 10 mL로 열판에서 두 번 반복하여 처리하는 것이 백금족 금속의 회수율 측면에서 가장 좋은 결과를 가져왔고(XRF 분석 대비 85~110%), 이 방법은 2% 이내의 상대 표준 편차를 보임으로써, 자동차 폐촉매의 일상적인 분석기법으로서의 충분한 가능성을 보였다.

• 대한전자공학회논문지
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• 제27권7호
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• pp.1042-1048
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• 1990

The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.

• Journal of Photoscience
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• 제7권2호
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• pp.67-71
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• 2000

A quantum-chemical investigation on the conformations and electronic properties of trans(diphenyl-diheterocyclic) ethenes(t-PHEs) as building block for fully $\pi$-conjuated polymer are performed in order to display the effects of heterocyclic ring substitution. Structures for the molecules, t-PHEs were fully optimized by using semiempirical AM1, PM3 methods, and ab initio HF methods, with 6-31G basic set. The potential energy curves with respect to the change of single are obtained by using ab initio HF/6-31G basic set. The curves are not similar shapes in the molecules with respect to heterocyclic rings. It is shown that the steric repulsion interactions between phenyl ring and heterocyclic ring are subjected to different type with the respect to each heterocyclic ring. Electronic properties of the molecules were molecules were obtained by applying the optimized structures and selected geometries to the extended Huckel method. To investigate the change of HOMO-LUMO gap with respedt to the torsion angle, we select the optimized structures. By using the results, the dependency of conjugation for the energy gaps is analyzed. For t-PHE the energy gap increase up to 0.52 eV compared with its planar structure. In the cases of t-PHE and t-PHE, the energy gap increase by 1.29 and 1.15 eV, respectively, compared with its planar structure.

• 한국재료학회지
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• 제16권8호
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• pp.473-478
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• 2006

The coherent interface energies and misfit strain energies of Fe/XN (X=Ti, Zr, Hf) systems were calculated by first principles method. The interface energies in Fe/TiN, Fe/ZrN and Fe/HfN systems were 0.343, 0.114, and 0.030 $J/m^2$, respectively. Influence of bond energy was estimated using the discrete lattice plane/nearest neighbor broken bond(DLP/NNBB) model. It was found that the dependence of interface energy on the type of nitride was closely related to changes of the bond energies between Fe, X and N atoms before and after formation of the Fe/XN interfaces. The misfit strain energies in Fe/TiN, Fe/ZrN, and Fe/HfN systems were 0.239, 1.229, and 0.955 eV per 16 atoms(Fe; 8 atoms and XN; 8 atoms). More misfit strain energy was generated as the difference of lattice parameters between the bulk Fe and the bulk XNs increased.

• 한국재료학회지
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• 제15권9호
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• pp.566-576
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• 2005

This paper describes an ab Initio study on interface energies, misfit strain energies, and electron structures at coherent interfaces Fe(bcc structure)/MCs(NaCl structure M=Ti, Zr, Hf). The interface energies at relaxed interfaces Fe/TiC, Fe/ZrC and Fe/HfC were 0.263, 0.153 and $0.271 J/m^2$, respectively. It was understood that the dependence of interface energy on the type of carbide was closely related to changes of the binding energies between Fe, M and C atoms before and after formation of the interfaces Fe/MCs with the help of the DLP/NNBB (Discrete Lattice Plane/ Nearest Neighbour Broken Bond) model and data of the electron structures. The misfit strain energies in Fe/TiC, Fe/ZrC and Fe/HfC systems were 0.390, 1.692 and 1.408 eV per 16 atoms(Fe: 8 atoms and MC; 8 atoms). More misfit energy was generated as difference of lattice parameters between the bulk Fe and the bulk MCs increased.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.66-67
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• 2002

Magnetic tunnel junction에서는 spin의 tunneling이 가장 기본적인 현상이기 때문에 tunnel junction의 특성은 tunnel barrier의 성질에 크게 의존한다. Tunnel barrier로는 지금까지 $Al_2$O$_3$가 주로 사용되고 있다. 하지만 $Al_2$O$_3$의 경우는 barrier height가 2-3 eV로 높기 때문에 저 저항의 tunnel junction을 형성하기 위해서는 Al의 두께가 1nm 이하로 낮아져야 한다. 따라서 이를 극복하기 위해서 $Al_2$O$_3$ 보다 낮은 barrier height를 갖는 절연막을 tunnel barrier로 사용하고자 하는 연구가 많이 진행되고 있다 (예를 들면 TaOx [1], ZrOx [2], GaOx [3], and HfOx [4]). (중략)

• Journal of Acupuncture Research
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• 제25권2호
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• pp.189-197
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• 2008

Objectives : This study was performed in order to investigate the effectiveness of electromyography and the Heart Rate Variability(HRV) test as prognosis factors, and to clarify correlation between Electromyography and the Heart Rate Variability test. Methods : 44 Bell's palsy patients who were graded V on the House-Brackmann scale and underwent HRV and EMG testing were retrospectively reviewed based on medical records. Results from both tests were analyzed via simple linear regression, and bivariate correlation analysis was performed to investigate the correlation between results from the two tests. The severity of the facial palsy at onset and at 2 weeks after treatment were evaluated with the H-B grade and Yanagihara grading system, and was converted into improvement scores. Results : Mean axonal loss according to electromyography showed a statistically significant correlation in predicting peripheral facial palsy improvement(p<0.01). HR, SDNN, TP, LF, HF, VLF, and LF/HF ratio on the Heart Rate Variability test showed no significant correlation in predicting peripheral facial palsy improvement. Mean axonal loss determined by electromyography, and HR, SDNN, TP, LF, HF, VLF, and LF/HF ratio recorded with the Heart Rate Variability test was analyzed with the bivariate correlation analysis method. Mean axonal loss and SDNN showed a statistically significant correlation(p<0.01) Conclusions : The Heart Rate Variability test has no statistical significance in predicting peripheral facial palsy improvement. SDNN has a statistically significant correlation with mean axonal loss as determined by electromyography.

• 전기전자학회논문지
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• 제26권4호
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• pp.633-638
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• 2022

최근 인간의 뇌를 모방한 스파이킹 뉴럴 네트워크(SNNs)의 뉴로모픽(Neuromorphic) 시스템이 주목을 받고 있다. 뉴로모픽 기술은 인지 응용과 처리 과정에서 속도가 빠르고 전력 소모가 적다는 장점이 있다. SNNs 기반의 저항성 랜덤 엑세스 메모리(RRAM) 은 병렬 연산을 위한 가장 효율적인 구조이며 스파이크 타이밍 종속 가소성(STDP)의 점진적인 스위칭 동작을 수행한다. 시냅스 소자 동작으로서의 RRAM은 저 전력 프로세싱과 다양한 메모리 상태를 표현한다. 하지만, RRAM 소자의 통합은 높은 스위칭 전압 및 전류를 유발하여 높은 전력 소비를 초래한다. RRAM의 동작 전압을 낮추기 위해서는 스위칭 레이어와 금속 전극의 신소재를 개발하는 것이 중요하다. 본 연구에서는 스위칭 전압을 낮추기 위해 전기적, 기계적 특성이 우수한 단일 벽 탄소나노튜브(SWCNTs)를 갖는 (Metal/Al₂O₃/HfO_x/SWCNTs/N+silicon, MOCS)라는 최적화된 새로운 구조를 제안하였다. 따라서 SWCNTs 기반 멤리스터의 점진적인 스위칭 동작 및 저 전력 I/V 곡선의 향상을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.358-358
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• 2010

To improve the programming/erasing speed and leakage current of multiple dielectric stack tunnel barrier engineering (TBE) Non-volatile memory, We propose a new concept called staggered structure of TBE memory. In this study, We fabricated staggered structure capacitor on $Si_3N_4$ stacked HfAlO and measured C-V curve that can observe tunneling characteristic of this device as various annealing temperature compared with that of single layer $SiO_2$ capacitor.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.103-107
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• 2006

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.