• Title/Summary/Keyword: HF gas-phase etch

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Characterization of Gas Phase Etching Process of SiO2 with HF/NH3

  • Kim, Donghee;Park, Heejun;Park, Sohyeon;Lee, Siwon;Kim, Yejin;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.45-50
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    • 2022
  • The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO2 was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

A Study on the Development of Vapor Phase Cleaning Equipment for Semiconductor Processing (반도체 공정에서의 기상 세정장비 개발에 관한 연구)

  • 박헌휘;이춘수;최승우;함승주
    • Proceedings of the KAIS Fall Conference
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    • 2001.05a
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    • pp.79-81
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    • 2001
  • 저압 기상 영역에서 Anhydrous HF 가스와 Methanol vapor를 사용하는 산화막 식각공정을 수행하기 위하여 (1) 반응기 부피의 최소화, (B) 공정압력의 최소화, (3) 고순도 알루미나 Reactor 적용, (4) Cluster화의 개념을 적용한 VPC 장치를 제작하였다. Wafer의 온도, HF의 분압 및 Working Pressure 등의 공정변수에 따른 Oxide Wafer의 식각특성의 변화를 확인하였다. 또한 Etch Uniformity를 향상시키기 위하여 Shower Head 구조를 변경시켜서 실험하였으며, CFD Simulation을 이용하여 Reactor내에서의 HF gas 및 Methanol vapor의 분율을 예측하였다.

Fabrication of Thermally-Driven Polysilicon Microactuator and Its Characterization (열구동형 폴리실리콘 마이크로 액츄에이터의 제작 및 특성분석)

  • Lee, J.H.;Lee, C.S.;Yoo, H.J.
    • Journal of the Korean Society for Precision Engineering
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    • v.14 no.12
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    • pp.153-159
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    • 1997
  • A thermally-driven polysilicon microactuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS(tetraethylorthosilicate) oxide as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And newly developed HF GPE(gas-phase etching) process was also employed to eliminate the troublesome stiction problem using anhydrous HF gas and CH$_{3}$OH vapor, and successfully fabricated the microactuators. The actuation is incurred by the thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon microactuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10V and 50Hz square wave. The actuating characteris- tics are also compared with the simulalted results considering heat transfer and thermal expansion in the polysilicon layer. This microactuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

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