• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.9-14
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• 2008

In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1029-1035
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• 2014

The protolytic dissociation process of hydrochloric acid (HCl) and hydrofluoric acid (HF) is studied using the B3LYP and MP2 methods with the 6-311+G(d,p) basis set in the gas phase and in aqueous solution. To study the phenomena in detail, discrete and discrete/continuum models were applied by placing water molecules in various positions around the acid. The dissociation process was studied using the thermodynamic cycle involving the structures optimized both in the gas phase and in aqueous solution and was analyzed with two key energy factors, relaxation free energy (${\Delta}G_{Rex(g)}$) and solvation free energy (${\Delta}G_s$). Based on the results, we could understand the dissociation mechanism and wish to propose the best way to study acid dissociation process using the CPCM methodology in aqueous solution.

• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.5-8
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• 2006

The growth properties of MOD-YBCO films were investigated. To enhance the growth rate of YBCO layer and inhibit the build-up of HF gas during the annealing process in TFA-MOD for YBCO coated conductors the method of low pressure annealing was employed. Total pressure was changed from 700Torr to 1Torr and its effect on growth of YBCO films was compared with atmospheric one. The lower Pressure was effective to control of the pore size in MOD method . Surface morphology of YBCO films processed at low total pres sure was rough and composed of random YBCO (103) grains. But large pores, usually observed at atmospheric process in MOD disappeared and also the number of pores was reduced at low pressure annealing. Also discussed ate the effects of Fluorine-free Y and Cu precursor solution on the development of microstructure. Dense surface me phology and with less and small pores can be provided through controlling Fluorine content.

• Journal of the Korean Wood Science and Technology
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• v.44 no.5
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• pp.629-638
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• 2016

In this study, the effect of inorganic constituents on the physicochemical properties of pyrolytic products produced from empty fruit bunch (EFB) by fast pyrolysis were investigated. Inorganic constituents were removed from the EFB by means of washing treatment with hydrofluoric acid (HF) and distilled water (D.I water). Ash content decreased from 6.2 wt% (EFB) to 2.4 wt% (HF-EFB) and 3.5 wt% (D.I-EFB), respectively. As a result of the inorganic component, a quantity of potassium in EFB has showed the highest removal efficiency in both HF and D.I water (HF: 80.3%, D.I water: 72.8%). Fast pyrolysis was performed with demineralized EFB in the fluidized bed reactor under the temperature of $500^{\circ}C$ at the residence time of 1.3 sec. The yield of bio-oil was determined to 57.3 wt% for HF-EFB and 52.1 wt% for D.I-EFB, respectively. Biochar yield decreased whereas yield of non-condensable gas increased with decreasing inorganic content of EFB. Water content decreased from 26.9% (EFB) to 9.9% (HF-EFB) and viscosity increased from 16.1 cSt (EFB) to 334 cSt (HF-EFB).

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.3.1-3.1
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• 2010

Water splitting reaction using photocatalysts is of great interest in the utilization of solar energy [1]. In the present work, visible light-responsive $TiO_2$ thin films (Vis-$TiO_2$) were prepared by a radio frequency magnetron sputtering (RF-MS) deposition method and applied for the separate evolution of $H_2$ and $O_2$ from water as well as the photofuel cell. Special attentions will be focused on the effect of HF treatment of Vis-$TiO_2$ thin films on their photocatalytic activities. Vis-$TiO_2$ thin films were prepared by an RF-MS method using a calcined $TiO_2$ plate and Ar as the sputtering gas. The Vis-$TiO_2$ thin films were then deposited on the Ti foil substrate with the substrate temperature at 873 K (Vis-$TiO_2$/Ti). Vis-$TiO_2$/Ti thin films were immersed in a 0.045 vol% HF solution at room temperature. The effect of HF treatments on the activity of Vis-$TiO_2$/Ti thin films for the photocatalytic water splitting reaction have been investigated. Vis-$TiO_2$/Ti thin films treated with HF solution (HF-Vis-$TiO_2$/Ti) exhibited remarkable enhancement in the photocatalytic activity for $H_2$ evolution from a methanol aqueous solution as well as in the photoelectrochemical performance under visible light irradiation as compared with the untreated Vis-$TiO_2$/Ti thin films. Moreover, Pt-loaded HF-Vis-$TiO_2$/Ti thin films act as efficient and stable photocatalysts for the separate evolution of $H_2$ and $O_2$ from water under visible light irradiation in the presence of chemical bias. Thus, HF treatment was found to be an effective way to improve the photocatalytic activity of Vis-$TiO_2$/Ti thin films. Furthermore, unique separate type photofuel cell was fabricated using a Vis-$TiO_2$ thin film as an electrode, which can generate electrical power under solar light irradiation by using various kinds of biomass derivatives as fuel. It was found that the introduction of an iodine ($I^-/{I_3}^-$) redox solution at the cathode side enables the development of a highly efficient photofuel cell which can utilize a cost-efficient carbon electrode as an alternative to the Pt cathode.

• Asian Journal of Atmospheric Environment
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• v.10 no.4
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• pp.190-196
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• 2016

The objective of this study is to obtain the optimal conditions to remove hydrogen fluoride (HF) generated from a variety of F-gas treatment processes. First, we selected $Ca(OH)_2$ and $CaCO_3$ as a reactant among the various alkali salts which have a high removal efficiency and a competitive price by forming a calcium fluoride precipitate. Additionally, various factors were investigated to improve the removal efficiency of HF. The conditions such as the settling time, agitating time and intensity, reaction temperature, and pH were considered as main factors. As a result, in the treatment process to remove HF through Ca-based alkali salts, the optimal conditions were a 120 min settling time, 30 min of agitation at 100 rpm, a pH of 4-8, and a reaction temperature of $40^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2003.11a
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• pp.395-400
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• 2003

For the long term storage safety study of the metallic spent fuel, U-Nb, U-Ti, U-Ni, U-Zr, and U-Hf simulated metallic uranium alloys, known as corrosion resistant alloys, were fabricated and oxidized in oxygen gas at $200^{\circ}C~300^{\circ}C$. Simulated metallic uranium alloys were more corrosion resistant than pure uranium metal, and corrosion resistance increases Nb, Ni, Ti in that order. The oxidation rates of uranium alloys determined and activation energy was calculated for each alloy. The matrix microstructure of the test specimens were analyzed using OM, SEM, and EPMA. It was concluded that Nb was the best acceptable alloying elements for reducing corrosion of uranium meta] considered to suitable as candidate.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.209-215
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• 2015

Following the semiconductor industry's growing, various types of toxic gases and caustic chemicals, HF(Hydrofluoric acid), HCI (Hydochloric acid), $H_2O_2$ (Hydrogen peroxide), $H_2SO_4$ (Sulfuric acid), and Piranha, were using on the semiconductor manufacturing process. Therefore many gas leakage accidents that produce huge losses of lives were caused by the processes. This research deeply considers two basic solutions that the necessity of MSDS education on university for reducing damage of lives and protecting life from chemical leak accidents such as a HF accident in Gumi, Korea and the use of GHS, REACH and the comprehension of propriety about using MSDS for keeping safety from conflagrations by released poison chemical materials.