• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.657-662
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• 2003

This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

• Polymer(Korea)
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• v.25 no.2
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• pp.302-310
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• 2001

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless Cu plated layer and polyester (PET) film, the effect of pretreatment conditions such as etching method and mixed catalyst composition, and accelerator was investigated. Compared to NaOH etching medium, PET film was more finely etched by HCl solution, resulting in an improvement in adhesion between Cu layer and PET film. However, there were no significant differences in electromagnetic interference shielding effectiveness as a function of etching medium. The surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$ : SnCl$_2$ from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, the adhesion and the shielding effectiveness of Cu plated PET film were increased. Furthermore, HCl was turned out to be a better accelerator than NaOH in order to enhance the activity of the mixed PdCl$_2$/SnCl$_2$ catalyst, which facilitated the formation of more uniform copper deposit on the PET film.

• Journal of the Korean Society of Clothing and Textiles
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• v.27 no.7
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• pp.843-850
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• 2003

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar＞HCl＞O$_2$＞NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$＜Ar＜HCl＜NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.235-236
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• 2008

Wet etched ZnO:Al films for thin film solar cells were prepared by Facing Target sputtering(FTS) method. Wet etching has been used to produce a rough TCO surface that enables light trapping in the absorber. The ZnO:Al films for thin film solar cells were etched by HCl 0.5%. The etching performance of ZnO:Al films can be tuned by changing etching time. The etched ZnO:Al films compared to a smooth ZnO:Al thin film structure. From the results, the lowest resistivity of deposited films was $5.67\times10^{-4}$ [$\Omega$-cm] and the transmittance of all ZnO:Al thin films were over 80% in visible range.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.95-99
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• 2008

This study has made the electrode that is coated zirconium oxide on the titanium by ESD(Electrostatic spray deposition) coating methode. It has investigated the effects of the etching method of a Ti substrate as the preparation, making of zirconium oxide film and electrochemical characteristics of the electrode that is etched on the titanium. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the metal oxide electrode, which is known to be so effective to generate ozone and hypochlorous acid (HOCl) as power oxidant, were studied. A proper metal oxide material is focus zirconium oxide through reference. A coating method to enhance the fabrication reproducibility of the zirconium oxide electrode was used ESD coating method by zirconium oxychloride. Zirconium oxide films on the Ti substrate were tested using SEM, XRD, Cyclic voltammetry.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.59-63
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• 2006

The study is coated tin(IV) oxide coated on the titanium substrate electrodes by electrodepositon and dip-coating method and studied about that physical and electrochemical characterization by coating methods. After titanium substrate is etched in HCl, electrodespotion is coated $SnCl_2{\cdot}2H_2O$ in nitrate solution by pulse technique, dip-coating method is also used $SnCl_2{\cdot}2H_2O$ in 1;1V% HCl and coated by dipping and annealing process. tin(IV) oxide coated on titanium substrate electrodes by two coating methods are studied x-ray diffraction (XRD), scanning electron microscopy (SEM) to compare physical characterization of electrode and potential window by cyclic voltammetry (CV) to observe electrochemical characterization.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.191-193
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• 2005

This study has investigated the effects of the etching method of a Ti substrate for a metal oxide electrode on the electrochemical characteristics of the electrode. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the catalytic oxide electrode, which is known to be so effective to destruct refractory organics in aqueous waste, were studied. A method to enhance the fabrication reproducibility of the oxide electrode was tested for Ru, Zr, Sn oxide on the Ti substrate using SEM, XRD, Cyclic voltammetry.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.241-248
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• 2020

The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.